256KX16BIT Search Results

Contextual Info: EDI8M16256C 35/45/55/70 Module The fu tu re . •■ A E>VAM C E OKIFOIF8MATDOM 256Kx16 SRAM CMOS, High Speed Module Features The EDI8M16256C is a 4096K 256Kx16bit High Speed Static RAM module constructed using sixteen EDI81256C (256Kx1) Static RAMs in ieadless chip

HYUF6404D

Abstract: HYUF6404
Contextual Info: HY62UF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02

Contextual Info: HY62UF16406C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values

Contextual Info: HY62LF16406C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values

VDR 0047

Contextual Info: HY62KF16403E Series 256Kx16bit full CMOS SRAM Document Title 256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Dec.26.2001 Preliminary 0.1 Absolute Maximum Ratings - Vcc changed -0.3V to 4.6V -> -0.3V to 4.0V

Contextual Info: HY62SF16406E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002

Contextual Info: HY62SF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02

Contextual Info: HY62UF16401 Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401 is a high speed, low power and 4M bit full CMOS SRAM organized as 262,144 words by 16bit. The HY62UF16401 uses high performance full CMOS process technology and designed for high speed low power circuit

Contextual Info: HY62QF16406D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

Contextual Info: HY62QF16404C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Jul.06.2000 Preliminary 01 Part No Change 100ns Part Delete Oct.30.2000

Contextual Info: HY62QF16403A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16403A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16403A uses high performance full CMOS process technology and is designed for high speed and low power

Contextual Info: HY63V16400A 256Kx16bit CMOS FAST SRAM Preliminary DESCRIPTION FEATURES The HY63V16400A is a 4,194,304-bit high-speed SRAM organized as 262,144 words by 16 bits. The HY63V16400A uses sixteen common input and output lines and has an output enable pin which operates faster than address access time at

Contextual Info: HY62UF16401A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16401A uses high performance full CMOS process technology and is designed for high speed and low power

HY62SF16404E

Abstract: HY62SF16404E-I
Contextual Info: HY62SF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002

marking TACS

Contextual Info: HY62UF16406E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002

Contextual Info: HY62LF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02

hysf643

Contextual Info: HY62SF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 08 Icc1 Value change. 30mA -> 20mA Nov.22.2000 Final 09 Marking Information add tBLZ / tOLZ value is changed

CMOS 4091

Contextual Info: HY62SF16406D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02

Contextual Info: HY62SF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002

Contextual Info: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention

Contextual Info: HY62UF16403A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16403A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16403A uses high performance full CMOS process technology and is designed for high speed and low power

EM256J16B

Abstract: EM256J16T
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM256J16 Preliminary EM256J16 256Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM256J16 is an integrated memory device

Contextual Info: HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401A / HY62QF16401A / HY62EF16401A / HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

Contextual Info: HY62VF08401C Series 256Kx16bit full CMOS SRAM Document Title 512K x 8bit 3.0 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.18.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values