HYUF6404D Search Results

HYUF6404D

Abstract: HYUF6404
Contextual Info: HY62UF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02

Contextual Info: HY62UF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02

HYUF6404D

Abstract: HYUF6404
Contextual Info: H Y 6 2U F 1 640 4D S eries 2 56K X 16bit full C M O S SRAM Preliminary DESCRIPTION FEATURES The HY62UF16404D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16404D uses high performance full CMOS process technology