GAN TRANSISTOR Search Results

GaN ADS

Abstract: GaN amplifier 120W transistor hemt RF393x
Contextual Info: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,

Gan hemt transistor RFMD

Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933
Contextual Info: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz

Gan hemt transistor RFMD

Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934
Contextual Info: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron

transistor smd 1p8

Contextual Info: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications

Contextual Info: PRELIMINARY CGH55015 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,

Contextual Info: PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide

Contextual Info: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

CGHV1J025D

Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high

CGH40045F

Abstract: CGH40045 10UF cree L2
Contextual Info: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

BZX385-C11

Abstract: zener diode A29
Contextual Info: AN11130 Bias module for 50 V GaN demonstration boards Rev. 1 — 8 December 2011 Application note Document information Info Content Keywords GaN, bias Abstract This application note describes a bias controller module for GaN HEMT RF power transistors. It provides constant quiescent drain current with

Contextual Info: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

Contextual Info: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

Contextual Info: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

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Abstract: str w 6556 str 6556 str 6708 STR 6553 CGH40025F CGH40025 str F 6256 CW 7805 str 6556 a
Contextual Info: PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

28F0181-1SR-10

Abstract: CAPACITOR 150 RED
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Gan transistor

Abstract: Gan hemt transistor transistor GaN
Contextual Info: Technical Update RFMD GaN High-Power Transistors Gallium Nitride GaN High-Power Transistors Features: • High-Power Density of up to 4W/mm • Advanced 0.5µm GaN HEMT process • 28V bias operation • High Gain up to 16 dB • Internally matched • Advanced Heat Sink Package

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

ATC100B620

Abstract: L22 amplifier Gan hemt transistor RFMD
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

RF3928B

Abstract: power transistor gan s-band RF392
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 