GAN TRANSISTOR Search Results

GAN TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
CLF1G0035-100P	Rochester Electronics LLC	CLF1G0035-100 - 100W Broadband RF power GaN HEMT	PDF
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF

GAN TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GaN ADS Abstract: GaN amplifier 120W transistor hemt RF393x Contextual Info: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,	Original	rf393x 900mhz 220ma rf3934 +4440ma gan ads gan amplifier 120w transistor hemt	PDF
Gan hemt transistor RFMD Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933 Contextual Info: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz	Original	gan hemt transistor rfmd rf393x transistor hemt rf3930 +6high power transistor rf gan amplifier gan amplifier 120w silicon carbide power transistor gaas rf3933	PDF
NPTB0004 Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015 Contextual Info: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2	Original	an-010 npt25100 nptb0004 gan amplifier 100w +7gan bias 25 watt vmos fet nptb00004 nptb00025 gan amplifier temperature compensation future scope of wimax npt25015	PDF
Gan hemt transistor RFMD Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934 Contextual Info: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron	Original	rf393x rf3933 rf3934 gan hemt transistor rfmd +6rf3932 high power transistor gan transistor rf3931 rf3930 gan amplifier	PDF
GaN amplifier Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation Contextual Info: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2	Original	an-013 nptb00004 12-watt npt25100 +10mrf6s9125 gan amplifier gan amplifier 100w gaas hemts x band 25w amplifier research nptb00050 high power fet amplifier schematic an-013 nitronex amplifier research rf power amplifier schematic broadband impedance transformation	PDF
X-band Gan Hemt Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535 Contextual Info: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2	Original	an-011 x-band gan hemt gan amplifier gan on silicon substrate +7rf gan amplifier mmic x-band amplifier x-band hemt amplifier algan/gan hemts gan on silicon transistor gan transistor k 1535	PDF
NPTB00004 Abstract: NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012 Contextual Info: APPLICATION NOTE AN-012 GaN Essentials AN-012: Thermal Considerations for GaN Technology NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-012 GaN Essentials: Thermal Considerations for GaN Technology 1. Table of Contents 1. TABLE OF CONTENTS. 2	Original	an-012 64-qam nptb00004 npt25015 +7ofdm equations npt1004 npt35015 nitron npt25100 transistor study nptb00025	PDF
CMPA2560025F Abstract: CMPA2560025F-TB c08bl242x Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb +1c08bl242x	PDF
CMPA0060002D Abstract: bonding wire cree Contextual Info: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon	Original	cmpa0060002d cmpa00 bonding wire cree	PDF
CMPA2735075F Abstract: IDQ Freq Products RF-35-0100-CH Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2735075f cmpa27 35075f 78001sa +2idq freq products rf-35-0100-ch	PDF
GaN amplifier temperature compensation Abstract: GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt NPT25100 AN009 Contextual Info: APPLICATION NOTE AN-009 GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 APPLICATION NOTE AN-009 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table of Contents	Original	an-009 npt25100 gan amplifier temperature compensation gan temperature compensation +720k ohm potentiometer gan amplifier hemt biasing thermistor 40k table nptb00025 gan bias 25 watt an009	PDF
Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2735075f cmpa27 35075f	PDF
GaN TRANSISTOR Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt Contextual Info: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor	Original	rf393x simple40 gan transistor rf3932 +4rf3931 rf3934 rf3933 transistor hemt	PDF
CMPA2560025F Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb +3cree microwave c08bl242x c08bl242x-5un-x0t	PDF

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa5585025f cmpa55 85025f	PDF
CMPA5585025F Abstract: power transistor gaas x-band CMPA5585025F-TB Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa5585025f cmpa55 85025f power transistor gaas x-band +1cmpa5585025f-tb	PDF
Contextual Info: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon	Original	cmpa0060002d cmpa00	PDF
CMPA2560025F Abstract: 920pF Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f 920pf	PDF
CMPA2060025D Contextual Info: CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2060025d cmp2060025d cmpa20	PDF
Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025d cmp2560025d cmpa25	PDF
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 6002ree	PDF
CMPA2560025F Abstract: CMPA2560025F-TB Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb	PDF
CMPA2560025F Abstract: CMPA2560025F-TB JESD22 A114D Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f cmpa2560025f-tb +2jesd22 a114d	PDF
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f	PDF

GAN TRANSISTOR Search Results

GAN TRANSISTOR Result Highlights (5)

GAN TRANSISTOR Datasheets Context Search

GaN ADS

Gan hemt transistor RFMD

NPTB0004

Gan hemt transistor RFMD

GaN amplifier

X-band Gan Hemt

NPTB00004

CMPA2560025F

CMPA0060002D

CMPA2735075F

GaN amplifier temperature compensation

GaN TRANSISTOR

CMPA2560025F

CMPA5585025F

CMPA2560025F

CMPA2060025D

CMPA2560025F

CMPA2560025F