CMPA0060002D Search Results
CMPA0060002D Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| CMPA0060002D |
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2W, GAN MMIC POWER AMPLIFIER, 28 | Original | 1.02MB | 8 |
CMPA0060002D Price and Stock
MACOM CMPA0060002D2W, GAN MMIC POWER AMPLIFIER, 28 |
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CMPA0060002D Datasheets Context Search
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Contextual Info: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon |
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CMPA0060002D CMPA0060002D CMPA00 | |
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Contextual Info: PRELIMINARY CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon |
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CMPA0060002D CMPA0060002D CMPA00 | |
CMPA0060002D
Abstract: bonding wire cree
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CMPA0060002D CMPA0060002D CMPA00 bonding wire cree |