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MACOM CMPA2735075F1 RF Amplifier MMIC, PA, 75W, 2.7-3.5GHz, GaN, FLANGE,
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA2735075F1					1 - 10 $729.38 100 $729.38 1000 $729.38 10000 $729.38	Get Quote
MACOM CMPA2735075F1-AMP RF Development Tools Eval Board GaN MMIC Included
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA2735075F1-AMP					1 - 10 $2310.00 100 $2310.00 1000 $2310.00 10000 $2310.00	Get Quote
Samtec Inc MW-03-03-G-D-235-075-FR Board to Board & Mezzanine Connectors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Sager	MW-03-03-G-D-235-075-FR					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc MW-13-03-G-D-235-075-FR Board to Board & Mezzanine Connectors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Sager	MW-13-03-G-D-235-075-FR					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc MW-40-03-G-D-235-075-FR Board to Board & Mezzanine Connectors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Sager	MW-40-03-G-D-235-075-FR					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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35075F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 35075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s 35075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2735075f cmpa27 35075f	PDF
2N5968 Abstract: 2N5967 Solidev Semiconductors Scans-0012430 Solidev Contextual Info: Sem iconductors Solidev Silicon Power Transistors M A X IM U M O P E R A T IN G A R E A S Silicon N P N /P N P Power Transistors—40 Amp A B S O L U T E M A X IM U M R A T IN G S 2N5967 2N5968 V 100 100 B V CEo (V) 100 100 BV c b o B V ebo (V) 8 10 lc M a x (A )	OCR Scan	n5967 2n5968 2n5967 35076d +3solidev semiconductors scans-0012430 solidev	PDF
CMPA2735075F Abstract: CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1 Contextual Info: ADVANCED INFORMATION 35075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s 35075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2735075f cmpa27 35075f cmpa2735075f-tb +6rf-35-0100-ch cree military mobility cgh2735075 transistor 2.7 3.1 3.5 ghz cw amp1052901-1	PDF
CMPA2735075F Abstract: IDQ Freq Products RF-35-0100-CH Contextual Info: 35075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s 35075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2735075f cmpa27 35075f 78001sa +2idq freq products rf-35-0100-ch	PDF
CMPA2735075F Contextual Info: 35075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s 35075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2735075f cmpa27 35075f 78001e	PDF