CMPA27 Search Results
CMPA27 Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CMPA2735015D | Wolfspeed | 25W, GAN MMIC POWER AMPLIFIER, 2 | Original | 619.08KB | 9 | ||
| CMPA2735015S | Wolfspeed | 25W GAN MMIC PA, 28V, 2.5-6.0GHZ | Original | 699.62KB | |||
| CMPA2735015S-AMP1 | Wolfspeed | 2.5-6.0GHZ, AMP W/ CMPA2560025F | Original | 699.62KB | |||
| CMPA2735030D | Wolfspeed | 30W, GAN MMIC POWER AMPLIFIER, 5 | Original | 473.53KB | 9 | ||
| CMPA2735030S | Wolfspeed | 30W GAN MMIC PA, 50V, 2.7-3.5GHZ | Original | 948.25KB | |||
| CMPA2735030S-AMP1 | Wolfspeed | 2.7-3.5GHZ, AMP W/ CMPA2735030S | Original | 948.25KB | |||
| CMPA2735075D | Wolfspeed | 75W, GAN MMIC POWER AMPLIFIER, 2 | Original | 389.52KB | 9 | ||
| CMPA2735075F1 | Wolfspeed | 75W GAN MMIC 50V 2.7-3.5GHZ | Original | 1.2MB | |||
| CMPA2735075F1-AMP | Wolfspeed | AMPLIFIER, 2.7-3.5GHZ, GAN MMIC | Original | 1.2MB | |||
| CMPA2738060F | Wolfspeed | 60W GAN MMIC PA, 50V, 2.7-3.8GHZ | Original | 2.71MB | |||
| CMPA2738060F-AMP | Wolfspeed | 2.7-3.8GHZ, AMP W/ CMPA2738060F | Original | 2.71MB |
CMPA27 Price and Stock
MACOM CMPA2735030SRF Amplifier MMIC, GaN HEMT, G50V3-1C, 30W, 2.7-3.5GH |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
CMPA2735030S | 25 |
|
Buy Now | |||||||
|
CMPA2735030S | 25 |
|
Buy Now | |||||||
MACOM CMPA2735015SRF Amplifier MMIC, GaN HEMT, G50V3-1C, 15W, 2.7-3.5Gh |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
CMPA2735015S |
|
Get Quote | ||||||||
|
CMPA2735015S | 50 |
|
Buy Now | |||||||
MACOM CMPA2738060FRF Amplifier Amplifier MMIC,GaN HPA, 60W, 2.7-3.8 GHz |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
CMPA2738060F |
|
Get Quote | ||||||||
|
CMPA2738060F | 4 | 10 |
|
Buy Now | ||||||
MACOM CMPA2735075F1RF Amplifier MMIC, PA, 75W, 2.7-3.5GHz, GaN, FLANGE, |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
CMPA2735075F1 |
|
Get Quote | ||||||||
|
CMPA2735075F1 | 10 |
|
Buy Now | |||||||
MACOM CMPA2735030DRF Amplifier MMIC, GaN, BARE DIE, DA, 30W, 2.7-3.5GHz |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
CMPA2735030D |
|
Get Quote | ||||||||
CMPA27 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium |
Original |
cmpa2735075fcmpa2735075f | |
|
Contextual Info: CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher |
Original |
cmpa2735075d | |
|
Contextual Info: CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher |
Original |
cmpa2735075d | |
CMPA2735075F
Abstract: CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1
|
Original |
cmpa2735075fcmpa2735075fcmpa2735075f-tb+6 | |
CMPA2735075DContextual Info: CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher |
Original |
cmpa2735075d | |
CMPA2735075F
Abstract: IDQ Freq Products RF-35-0100-CH
|
Original |
cmpa2735075fcmpa2735075f78001sa+2 | |
CMPA2735075FContextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium |
Original |
cmpa2735075fcmpa2735075f78001e |