CMPA2735075F Search Results
CMPA2735075F Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CMPA2735075F1 |
|
75W GAN MMIC 50V 2.7-3.5GHZ | Original | 1.2MB | |||
| CMPA2735075F1-AMP |
|
AMPLIFIER, 2.7-3.5GHZ, GAN MMIC | Original | 1.2MB |
CMPA2735075F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium |
Original |
cmpa2735075fcmpa2735075f | |
CMPA2735075F
Abstract: CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1
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Original |
cmpa2735075fcmpa2735075fcmpa2735075f-tb+6 | |
CMPA2735075F
Abstract: IDQ Freq Products RF-35-0100-CH
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Original |
cmpa2735075fcmpa2735075f78001sa+2 | |
CMPA2735075FContextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium |
Original |
cmpa2735075fcmpa2735075f78001e |