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Cyg Wayon Circuit Protection Co Ltd LP60-025F Fuse: PTC polymer; THT; 250mA; Imax: 40A; Iswitch.max: 1.25A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	LP60-025F		260		10	1 - 10 $0.21 100 $0.17 1000 $0.13 10000 $0.13	Buy Now
OMRON Corporation F3SG-4SRB0600-25-F Safety light curtain; H: 600mm; 0.3÷20m; IP67; F3SG-SRB Standard
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	F3SG-4SRB0600-25-F				1	1 $1193.04 10 $1107.83 100 $1107.83 1000 $1107.83 10000 $1107.83	Get Quote
Mouser Electronics	F3SG-4SRB0600-25-F					1 $1519.99 10 $1470.56 100 $1470.56 1000 $1470.56 10000 $1470.56	Get Quote
MACOM CMPA0060025F1 RF Amplifier Amplifier, MMIC,HPA,25W,DC-6.0GHz,GaN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA0060025F1		21			1 $1002.16 10 $1002.16 100 $1002.16 1000 $1002.16 10000 $1002.16	Buy Now
MACOM CMPA2560025F RF Amplifier GaN MMIC Power Amp 2.5-6.0GHz, 25 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA2560025F		9			1 $1142.00 10 $1142.00 100 $1142.00 1000 $1142.00 10000 $1142.00	Buy Now
MACOM CMPA0060025F RF Amplifier GaN MMIC Power Amp 0.02-6.0GHz, 25 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA0060025F					1 $949.75 10 $949.75 100 $949.75 1000 $949.75 10000 $949.75	Get Quote

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60025F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CMPA0060025F Abstract: CMPA0060025F-TB CMPA2560002F JESD22 Contextual Info: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa0060025f hz-6000 cmpa00 60025f +3cmpa0060025f-tb cmpa2560002f jesd22	PDF
CMPA2560025F Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T Contextual Info: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb +3cree microwave c08bl242x c08bl242x-5un-x0t	PDF
Contextual Info: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa0060025f hz-6000 cmpa00 60025f	PDF
CMPA2560025F Abstract: 920pF Contextual Info: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f 920pf	PDF
Contextual Info: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 6002ree	PDF
CMPA2560025F Abstract: CMPA2560025F-TB Contextual Info: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb	PDF
CMPA2560025F Abstract: CMPA2560025F-TB JESD22 A114D Contextual Info: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f cmpa2560025f-tb +2jesd22 a114d	PDF
Contextual Info: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f	PDF
TBTH06M20 Abstract: CMPA0060025F Contextual Info: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa0060025f hz-6000 cmpa00 60025f +1tbth06m20	PDF
CMPA0060025F Abstract: RF-35-0100-CH CMPA0060025F-TB Contextual Info: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa0060025f hz-6000 cmpa00 60025f +2rf-35-0100-ch cmpa0060025f-tb	PDF
CMPA2560025F Abstract: RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408 Contextual Info: PRELIMINARY 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f rf-35-0100-ch c08bl242x cree microwave +2cmpa2560025f-tb transistor on 4408	PDF
cree Abstract: CMPA0060025F Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20 Contextual Info: PRELIMINARY 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa0060025f hz-6000 cmpa00 60025f +5cree cree microwave cmpa0060025f-tb cmpa2560002f tbt-h06m20	PDF
CMPA2560025F Abstract: CMPA2560025F-TB c08bl242x Contextual Info: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb +1c08bl242x	PDF