CMPA25 Search Results
CMPA25 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CMPA2560025D | Wolfspeed | 25W, GAN MMIC POWER AMPLIFIER, 2 | Original | 1.37MB | 11 | ||
| CMPA2560025F | Cree | RF Amplifiers, RF/IF and RFID, IC AMP MMIC HEMT 25W 780019PKG | Original | 10 | |||
| CMPA2560025F-AMP | Wolfspeed | CMPA2560025F DEV BOARD WITH HEMT | Original | 915.79KB | |||
| CMPA2560025F-TB | Cree | RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CKT CMPA2560025F | Original | 10 |
CMPA25 Price and Stock
Wolfspeed CMPA2560025FIC RF AMP 2.5GHZ-6GHZ 780019 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CMPA2560025F | 300 |
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Buy Now | |||||||
CMPA25 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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CMPA2560025F
Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
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cmpa2560025fcmpa2560025fscmpa2560025f-tb+3 | |
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Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium |
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cmpa2560025dcmp2560025dcmpa25 | |
CMPA2560025F
Abstract: 920pF
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cmpa2560025fcmpa2560025f920pf | |
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Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium |
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cmpa2560025dcmp2560025dcmpa25 | |
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Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium |
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cmpa2560025fcmpa256002ree | |
CMPA2560025F
Abstract: CMPA2560025F-TB
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cmpa2560025fcmpa2560025fscmpa2560025f-tb | |
CMPA2560025F
Abstract: CMPA2560025F-TB JESD22 A114D
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cmpa2560025fcmpa2560025fcmpa2560025f-tb+2 | |
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Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium |
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cmpa2560025fcmpa2560025f | |
CMPA2560025FContextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium |
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cmpa2560025dcmp2560025dcmpa25cmpa2560025f | |
CMPA2560025F
Abstract: RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408
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cmpa2560025frf-35-0100-chc08bl242xcree microwave+2 | |
CMPA2560025F
Abstract: CMPA2560025F-TB c08bl242x
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cmpa2560025fcmpa2560025fscmpa2560025f-tb+1 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
CMPA0060002F
Abstract: CMPA0060002F-TB CMPA2560002F
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cmpa0060002fcmpa0060002f-tbcmpa2560002f | |
CMPA0060025F
Abstract: CMPA0060025F-TB CMPA2560002F JESD22
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cmpa0060025fhz-6000cmpa0060025f+3 | |
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TBT-06M20
Abstract: CMPA0060002F SMF3-12 aeroflex SMF3-12
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cmpa0060002fcmpa0060002ftbt-06m20+2 | |
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Contextual Info: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium |
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cmpa0060025fhz-6000cmpa0060025f | |
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Contextual Info: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium |
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cmpa0060002f | |
TBTH06M20
Abstract: CMPA0060025F
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cmpa0060025fhz-6000cmpa0060025f+1 | |
CMPA0060025F
Abstract: RF-35-0100-CH CMPA0060025F-TB
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cmpa0060025fhz-6000cmpa0060025f+2 | |
TBT-03M1
Abstract: CMPA0060005F Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F
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cmpa0060005ftbt-03m1tecdiacree microwave+3 | |
cree
Abstract: CMPA0060025F Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20
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cmpa0060025fhz-6000cmpa0060025f+5 | |
CMPA0060002F
Abstract: Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH
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cmpa0060002ftecdiacmpa0060002f-tbcree microwave+3 | |
CMPA0060002F
Abstract: CMPA0060002F-TB CMPA2560002F JESD22
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cmpa0060002fcmpa0060002f-tbcmpa2560002fjesd22 | |