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    CMPA25 Search Results

    CMPA25 Datasheets (4)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CMPA2560025D
    Wolfspeed 25W, GAN MMIC POWER AMPLIFIER, 2 Original PDF 1.37MB 11
    CMPA2560025F
    Cree RF Amplifiers, RF/IF and RFID, IC AMP MMIC HEMT 25W 780019PKG Original PDF 10
    CMPA2560025F-AMP
    Wolfspeed CMPA2560025F DEV BOARD WITH HEMT Original PDF 915.79KB
    CMPA2560025F-TB
    Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CKT CMPA2560025F Original PDF 10
    SF Impression Pixel

    CMPA25 Price and Stock

    Wolfspeed

    Wolfspeed CMPA2560025F

    IC RF AMP 2.5GHZ-6GHZ 780019
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics CMPA2560025F 300
    • 1 $1747.20
    • 10 $1747.20
    • 100 $1747.20
    • 1000 $1747.20
    • 10000 $1747.20
    Buy Now

    CMPA25 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CMPA2560025F

    Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
    Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    cmpa2560025fcmpa2560025fscmpa2560025f-tb+3cree microwavec08bl242xc08bl242x-5un-x0t PDF

    Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    cmpa2560025dcmp2560025dcmpa25 PDF

    CMPA2560025F

    Abstract: 920pF
    Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    cmpa2560025fcmpa2560025f920pf PDF

    Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    cmpa2560025dcmp2560025dcmpa25 PDF

    Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    cmpa2560025fcmpa256002ree PDF

    CMPA2560025F

    Abstract: CMPA2560025F-TB
    Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    cmpa2560025fcmpa2560025fscmpa2560025f-tb PDF

    CMPA2560025F

    Abstract: CMPA2560025F-TB JESD22 A114D
    Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    cmpa2560025fcmpa2560025fcmpa2560025f-tb+2jesd22a114d PDF

    Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    cmpa2560025fcmpa2560025f PDF

    CMPA2560025F

    Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    cmpa2560025dcmp2560025dcmpa25cmpa2560025f PDF

    CMPA2560025F

    Abstract: RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408
    Contextual Info: PRELIMINARY CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    cmpa2560025frf-35-0100-chc08bl242xcree microwave+2cmpa2560025f-tbtransistor on 4408 PDF

    CMPA2560025F

    Abstract: CMPA2560025F-TB c08bl242x
    Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    cmpa2560025fcmpa2560025fscmpa2560025f-tb+1c08bl242x PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F
    Contextual Info: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    cmpa0060002fcmpa0060002f-tbcmpa2560002f PDF

    CMPA0060025F

    Abstract: CMPA0060025F-TB CMPA2560002F JESD22
    Contextual Info: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    cmpa0060025fhz-6000cmpa0060025f+3cmpa0060025f-tbcmpa2560002fjesd22 PDF

    TBT-06M20

    Abstract: CMPA0060002F SMF3-12 aeroflex SMF3-12
    Contextual Info: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    cmpa0060002fcmpa0060002ftbt-06m20+2smf3-12aeroflex smf3-12 PDF

    Contextual Info: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    cmpa0060025fhz-6000cmpa0060025f PDF

    Contextual Info: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    cmpa0060002f PDF

    TBTH06M20

    Abstract: CMPA0060025F
    Contextual Info: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    cmpa0060025fhz-6000cmpa0060025f+1tbth06m20 PDF

    CMPA0060025F

    Abstract: RF-35-0100-CH CMPA0060025F-TB
    Contextual Info: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    cmpa0060025fhz-6000cmpa0060025f+2rf-35-0100-chcmpa0060025f-tb PDF

    TBT-03M1

    Abstract: CMPA0060005F Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F
    Contextual Info: PRELIMINARY CMPA0060005F 5 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060005F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    cmpa0060005ftbt-03m1tecdiacree microwave+3gan on silicon transistorcmpa0060005f-tbcmpa2560002f PDF

    cree

    Abstract: CMPA0060025F Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20
    Contextual Info: PRELIMINARY CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    cmpa0060025fhz-6000cmpa0060025f+5creecree microwavecmpa0060025f-tbcmpa2560002ftbt-h06m20 PDF

    CMPA0060002F

    Abstract: Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH
    Contextual Info: PRELIMINARY CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    cmpa0060002ftecdiacmpa0060002f-tbcree microwave+3cmpa2560002fsmf3-12rf-35-0100-ch PDF

    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F JESD22
    Contextual Info: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original
    cmpa0060002fcmpa0060002f-tbcmpa2560002fjesd22 PDF