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CMPA2560025F Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CMPA2560025F		Cree	RF Amplifiers, RF/IF and RFID, IC AMP MMIC HEMT 25W 780019PKG	Original	PDF		10
CMPA2560025F-AMP		Wolfspeed	CMPA2560025F DEV BOARD WITH HEMT	Original	PDF	915.79KB
CMPA2560025F-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CKT CMPA2560025F	Original	PDF		10

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MACOM CMPA2560025F RF Amplifier GaN MMIC Power Amp 2.5-6.0GHz, 25 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA2560025F		9			1 $1077.51 10 $1077.51 100 $1077.51 1000 $1077.51 10000 $1077.51	Buy Now
Richardson RFPD	CMPA2560025F				10	1 $890.22 10 $890.22 100 $631.28 1000 $631.28 10000 $574.46	Buy Now
MACOM CMPA2560025F-AMP RF Development Tools Eval Board 2.5-6.0GHz
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA2560025F-AMP					1 - 10 $2310.00 100 $2310.00 1000 $2310.00 10000 $2310.00	Get Quote
Richardson RFPD	CMPA2560025F-AMP				1	1 - 10 - 100 $1813.14 1000 $1813.14 10000 $1813.14	Buy Now
Wolfspeed CMPA2560025F IC RF AMP 2.5GHZ-6GHZ 780019
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	CMPA2560025F		300			1 $1747.20 10 $1747.20 100 $1747.20 1000 $1747.20 10000 $1747.20	Buy Now

CMPA2560025F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CMPA2560025F Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb +3cree microwave c08bl242x c08bl242x-5un-x0t	PDF
CMPA2560025F Abstract: 920pF Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f 920pf	PDF
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 6002ree	PDF
CMPA2560025F Abstract: CMPA2560025F-TB Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb	PDF
CMPA2560025F Abstract: CMPA2560025F-TB JESD22 A114D Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f cmpa2560025f-tb +2jesd22 a114d	PDF
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f	PDF
CMPA2560025F Abstract: RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408 Contextual Info: PRELIMINARY CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f rf-35-0100-ch c08bl242x cree microwave +2cmpa2560025f-tb transistor on 4408	PDF
CMPA2560025F Abstract: CMPA2560025F-TB c08bl242x Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb +1c08bl242x	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	p462-nd p463-nd lng295lfcp2u lng395mftp5u +11us2011 schematic diagram atx power supply 500w pioneer pal 012a 1000w inverter pure sine wave schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 tle 9180 infineon smsc mec 1300 nu tbe schematic diagram inverter 2000w dk55 circuit diagram of luminous 600va ups	PDF
Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025d cmp2560025d cmpa25	PDF
Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025d cmp2560025d cmpa25	PDF
CMPA2560025F Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025d cmp2560025d cmpa25 cmpa2560025f	PDF