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    85025F Search Results

    85025F Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    498-5025-F61
    		Amphenol Communications Solutions VHDM®, Backplane connectors, Vertical Orientation, Press Fit Termination, 6 Row VHDM, 25 positions, right, F-Key, 4.75mm (0.187in), Header. PDF
    498-5025-F63
    		Amphenol Communications Solutions VHDM®, Backplane connectors, Vertical Orientation, Press Fit Termination, 6 Row VHDM, 25 positions, right, F-Key, 4.25mm (0.167in), Header. PDF
    498-5025-F62
    		Amphenol Communications Solutions VHDM®, Backplane connectors, Vertical Orientation, Press Fit Termination, 6 Row VHDM, 25 positions, right, F-Key, 6.25mm (0.246in), Header. PDF
    498-5025-F64
    		Amphenol Communications Solutions VHDM®, Backplane connectors, Vertical Orientation, Press Fit Termination, 6 Row VHDM, 25 positions, right, F-Key, 5.15mm (0.202in), Header. PDF
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    85025F Price and Stock

    Eaton Corporation

    Eaton Corporation 185025F-12-S

    HI-AMP BREAKER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 185025F-12-S Bulk 19 Weeks 60
    • 1 -
    • 10 -
    • 100 $40.31
    • 1000 $37.49
    • 10000 $37.49
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    TTI 185025F-12-S Bulk 60
    • 1 -
    • 10 -
    • 100 $27.63
    • 1000 $27.09
    • 10000 $27.09
    		Buy Now

    Eaton Corporation 185025F-03-1

    HI-AMP CIRCUIT BREAKER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 185025F-03-1 Bulk 19 Weeks 60
    • 1 -
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    • 100 $36.94
    • 1000 $34.36
    • 10000 $34.36
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    TTI 185025F-03-1 Bulk 60
    • 1 -
    • 10 -
    • 100 $27.63
    • 1000 $27.09
    • 10000 $27.09
    		Buy Now

    Eaton Corporation 185025F-12-1

    HI-AMP BREAKER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 185025F-12-1 Bulk 19 Weeks 60
    • 1 -
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    • 100 $38.77
    • 1000 $36.44
    • 10000 $36.44
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    TTI 185025F-12-1 Bulk 60
    • 1 -
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    • 100 $27.63
    • 1000 $27.09
    • 10000 $27.09
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    Eaton Corporation 185025F-01-1

    HI-AMP BREAKER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 185025F-01-1 Bulk 19 Weeks 60
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    • 100 $30.80
    • 1000 $28.65
    • 10000 $28.65
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    TTI 185025F-01-1 Bulk 60
    • 1 -
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    • 100 $25.44
    • 1000 $23.21
    • 10000 $23.21
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    Eaton Corporation 185025F-01-S

    HI-AMP BREAKER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 185025F-01-S Bulk 19 Weeks 60
    • 1 -
    • 10 -
    • 100 $62.25
    • 1000 $56.03
    • 10000 $56.03
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    TTI 185025F-01-S Bulk 60
    • 1 -
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    • 100 $26.74
    • 1000 $26.21
    • 10000 $26.21
    		Buy Now
    Find more 85025F price and stock on Findchips.com

    85025F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		cmpa5585025fcmpa5585025f PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		cmpa5585025fcmpa5585025f PDF

    CMPA5585025F

    Abstract: power transistor gaas x-band CMPA5585025F-TB
    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		cmpa5585025fcmpa5585025fpower transistor gaas x-band+1cmpa5585025f-tb PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		cmpa5585025fcmpa5585025f PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		cmpa5585025fcmpa5585025f PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		cmpa5585025fcmpa5585025f PDF

    RF3-50

    Abstract: POWER456
    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher


    Original     		cmpa5585025fcmpa5585025frf3-50+1power456 PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		cmpa5585025fcmpa5585025f PDF

    x-Band Hemt Amplifier

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		cmpa5585025fcmpa5585025fx-band hemt amplifier PDF