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CMPA55 Datasheets (6)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CMPA5585025F		Cree	RF Amplifiers, RF/IF and RFID, RF AMP 8.5GHZ MMIC PA	Original	PDF		18
CMPA5585025F-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF AMP 8.5GHZ MMIC PA	Original	PDF		18
CMPA5585030D		Wolfspeed	IC AMP 5.5GHZ-8.5GHZ 30W	Original	PDF	364.79KB
CMPA5585030F		Cree/Wolfspeed	RF/IF and RFID - RF Amplifiers - IC RF AMP 5.5GHZ-8.5GHZ 440213	Original	PDF	987.4KB
CMPA5585030F-AMP		Wolfspeed	CMPA5585030F DEV BOARD WITH HEMT	Original	PDF	1.08MB
CMPA5585030F-TB		Cree/Wolfspeed	RF/IF and RFID - RF Evaluation and Development Kits, Boards - TEST BOARD	Original	PDF	987.4KB

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MACOM


MACOM CMPA5585030F RF Amplifier GaN MMIC Power Amp 5.5-8.5GHz, 30 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA5585030F					1 $1231.34 10 $1231.34 100 $1231.34 1000 $1231.34 10000 $1231.34	Get Quote
MACOM CMPA5585030D RF Amplifier MMIC, DIE, 30W, 5.5-8.5GHz, 510595
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA5585030D					1 - 10 $1148.12 100 $1148.12 1000 $1148.12 10000 $1148.12	Get Quote
MACOM CMPA5585030F-AMP RF Development Tools Eval Board 5.5-8.5GHz
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA5585030F-AMP					1 - 10 $2310.00 100 $2310.00 1000 $2310.00 10000 $2310.00	Get Quote

CMPA55 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa5585025f cmpa55 85025f	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa5585025f cmpa55 85025f	PDF
CMPA5585025F Abstract: power transistor gaas x-band CMPA5585025F-TB Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa5585025f cmpa55 85025f power transistor gaas x-band +1cmpa5585025f-tb	PDF
CMPA5585025D Abstract: vd2b Contextual Info: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	cmpa5585025d cmp5585025d vd2b	PDF
CMPA5585025D Contextual Info: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	cmpa5585025d 38rolina	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa5585025f cmpa55 85025f	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa5585025f cmpa55 85025f	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa5585025f cmpa55 85025f	PDF
Contextual Info: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	cmpa5585025d cmp5585025d	PDF
RF3-50 Abstract: POWER456 Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher	Original	cmpa5585025f cmpa55 85025f rf3-50 +1power456	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa5585025f cmpa55 85025f	PDF
x-Band Hemt Amplifier Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa5585025f cmpa55 85025f x-band hemt amplifier	PDF