FLK052 Search Results

Contextual Info: FLK052WG Film ali rU JIl X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK052WG is a power GaAs FET that is designed for general

FLK052WG

Contextual Info: FLK052WG X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK052WG is a power GaAs FET that is designed for general

Contextual Info: FLK052XV G a As F ET and HEMT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current >d s s Test Conditions 200 300 mA - 100 - mS -1.0 -2.0 -3.5 V - V Vqs = 5V, Ids = 125mA Pinch-off Voltage vp Vos = 5V, ids =

FLC301XP

Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5

FLk052

Contextual Info: FLK052XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a power GaAs FET that is designed for

FLK052

Abstract: FLK052WG
Contextual Info: FLK052 WG X-kii B and Power iaAs I E I s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Condition S igillo! Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 3.75 w -65 to +175 °c °c Total Power Dissipation Tc = 25°C

FLK052xv

Contextual Info: FLK052XV Füjrrsu GaAs FE T and H E M T Chips FEATURES • • • • High O utput Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ g = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a pow er G aAs FET that is designed for

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

FLC301XP

Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
Contextual Info: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X

siliconix vmp4

Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
Contextual Info: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc

FLC081XP

Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
Contextual Info: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of

FLK202MH-14

Abstract: FLK052WG
Contextual Info: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <t*B) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) *DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH