F100MHZ Search Results

MPSA63

Abstract: MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 mpsa64
Contextual Info: TOSHIBA TRANSISTOR MPSA62, 63, 64 SILICON PNP EPITAXIAL TYPE PCT PROCESS DESIGNED FOR PRE-AMPLIFIER INPUT APPLICATIONS REQUIRING HIGH INPUT IMPEDANCE. FEATURES : • High DC Current Gain I I C-10«A : hFE- 5000(Min.) MPSA63 10000(Min.) MPSA64 20000(Min.) MPSA62

YTS2222A

Abstract: transistor marking 1p Z
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage

YTS4401

Abstract: MARKING e1v
Contextual Info: SILICON NPN EPITAXIAL TYPE YTS4401 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES : • Low Leakage Current : Ic]jv=100nA Max. , Iggy=-100nA (Max.) @ VCE=35V, V b e =-0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

Contextual Info: M i- 2N2222A GENERAL PURPOSE NPN TRANSISTOR 61096 OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 , 0 170(4 32) [' TO -18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available

A4H1

Abstract: HD6417750RBG240 264-PIN BSC COMPUTER SCIENCE digital logic design Notes Transistor mcr 22-8 413 REJ10B0210-0400 A5H1 zo 607 HD6417750RBP240V Tag 225 600 replacement
Contextual Info: REJ09B0366-0700 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. SH7750, SH7750S, SH7750R Group 32

2SJ83

Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
Contextual Info: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m

2SK520

Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id

DSA-001

Abstract: hitachi HD6417750BP200 822 1334 Hitachi DSA002753
Contextual Info: SuperH SH 32-Bit RISC MCU/MPU Series SH7750 High-Performance RISC Engine Hardware Manual ADE-602-124B Rev. 3.0 09/20/99 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

Contextual Info: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW TO-92 SOT-23 B ABSOLUTE M AXIM U M RATINGS (Ta = 25 C) Symbol Rating Unit Collector-Base Voltage VCBO

HD6417750SF167V

Abstract: BSC COMPUTER SCIENCE visual basic Notes HXXXXX hudi D63D48 SZ100 DBL 1035 Nippon capacitors SCHEMATIC ATI graphics card HD6417750BP200M
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSU E 3 - JANUARY 1996 FEATURES * High fT=900M H z M in * M a x capacitance=1pF * Low noise 4.5dB m i P A R T M A R K IN G D ET A IL -1 7 9 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L

Contextual Info: SM-8 COMPLEMENTARY M EDIUM POWER HIGH GAIN TRANSISTORS ZDT6718 ISSUE 1 - NOVEMBER 1995 - ci c r _U Bi Ct C L =□ Ei NPN C» 1 1 ZD b2 c2 l 1 ZO e2 pnp PARTMARKING DETAIL- T6718 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L NPN

ZTX1051A

Abstract: transistor 3342
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A ISSUE 2 -JANUARY 95. " ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL ZTX1051A UNIT Collector-Base Voltage VCBO 150 V Collector-Em itter Voltage VCEO 40 V Em itter-Base Voltage VEBO

transistor C 245 b

Abstract: ZTX1053A
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A ISSU E 2 - JANUARY 1995_ — — — — — — — - ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage ZT X 1 05 3A U N IT v CBO 150 V Coliector-Emitter Voltage

transistor marking MK

Abstract: YTS2222
Contextual Info: TOSHIBA TRANSISTOR YTS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1~ -500mA . High Transition Frequency : @ Ic— 50mA, fx*200MHz(Min.)

1k eprom

Abstract: Hitachi DSA002732
Contextual Info: Hitachi SuperH RISC engine SH7750 Series SH7750, SH7750S Hardware Manual ADE-602-124C Rev. 4.0 4/21/00 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

Contextual Info: One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 KSC1674 NPN EPITAXIAL SILICON TRANSISTOR inir"D \mrLlrltn, TV PIF AMPLIFIER, FM TUNER RF/Ml/ini MIXER, OSCILLATOR 1 TO-92 • High Current-Qain-Bandwidth Product fT=6QOMHz (Typ)

BC8468

Abstract: BC347C BCS46A pnp 400V BC347 BCS48 BC8508 BCS46B BC347A BC349
Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C 1 General Purpose Transistor P N P Silicon "M oisture Sen sitivity Level M A R K IN G M A R R A M n X X - Drvfc» Codt See 1.M * H rlow > SOT-23 1 •U * E S D Rating • Hum an B o d y M odel:> 4000V D M ach in e Model: >4-00V

2SK30

Abstract: 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . * * (V) «• m të P d /P c h (A) * * (W) Ig s s (max) (A) Vg s (V) ^ te W (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id

Contextual Info: - fe /Ë • a II • M I 3 O 1 H » : ^ « a í t a ^ o i s s d r IB E # @ S S íí, í 'l l o m f f î i S M î i X ' t -, f- y *- pin K E9. • Ml 3 0 3 t o : # w y ÿ'fflo (p in y 4 % — k ) EM • Ml 3 0 8 : S a ® 1 8 8 l® a i$ fflT (PIN •M I 4 O 2

ZTX552

Abstract: ZTX550 ZTX551 ZTX553 TMB-250
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 - MARCH 94_ FEATURES * 60 Volt VCE0 * 1 Amp continuous current * Pi0,= 1Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

ZTX214C

Abstract: T092 ZTX300
Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSU E 2 - MARCH 94_ FEATURES * 15 Volt V,CEO fT=500 M H z ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAMETER Coliector-Base Voltage VALUE V CBO 40 Collector-Emitter Voltage

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *

P1y transistor

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -JANUARY 1995_ ' - ZTX1056A FEATURES * V c e o =1 6 0 V * 3 A m p C o n t in u o u s Current * 6 A m p P u lse Current * L o w Sa tu ra tio n V olta ge ABSOLUTE MAXIM UM RATINGS.