2SK197 Search Results

2SK1971

Abstract: DSA003725
Contextual Info: 2SK1971 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline

2SJ83

Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
Contextual Info: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m

2SK2261

Abstract: 2SK2104 2SK1973 2SK1974 2SK1976 2SK2094 2SK2095 2SK2176 2SK2262 2SK1975
Contextual Info: POWER MOSFET Excellent switching capability with low on resistance, suitable for switching power supply or DC-DC converter. Taping products for use on an automatic insert machine are also available. Quick reference N te o [v] 2 5 10 450 500 2SK1976 T0-220FP

Contextual Info: 2SK197YD Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)18Ê I(D) Max. (A)20m I(G) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)125þ I(GSS) Max. (A)10n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

HITACHI 757

Abstract: D9001 a760
Contextual Info: 2SK1971 Silicon N-Channel MOS FET HITACHI Application H igh s p ee d p o w e r sw itc h in g Features • L o w o n-resistan ce • H igh speed sw itchin g • L ow drive cu rren t • N o S e c o n d ary B re a k d o w n • Suitable for S w itc h in g regu lato r, D C - D C c on ve rter. M o to r C ontrol

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

K1976

Abstract: 2SK1976
Contextual Info: ROHm S p e c iT tc a n o n T Û E Û 'm P ro a u c ts tentative 1. 2. 3. 4. 0 0 0flô 2fl T IS • R H fl IType KOSFET i 2 SK19 7 6 TYPE. DESCRIPTION. Silicon N -C h an n el M O S APPLICATION. Switching. ABSOLUTE MAXIMUM RATINGS T a = 2 5 ”C Pa9e 2SK1976

2SK55

Abstract: 2SK197
Contextual Info: HITACHI 2SK197 S.LICON N-CHANNEL JUNCTION FET VH F AMPLIFIER. MIXER 0 - 0.1 I. O jic 2Orjin y a in-rrtn*.f MPAK mA8SOLUTÊ MAXIMUM RATINGS tTa=25X> Symbol Item MAXIMUM CHANNEL POWER DISSIPATION CURVE 2SK1V7 Unii - IS V 2Ü tn A Gate ip drain vo ltile v cao

Contextual Info: 2SK1971 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, Motor Control

2SK1976

Contextual Info: 2SK1976 Silicon N-channel MOSFET Features Dimensions Units : mm available in T0-220FP (SC-67) package 2SK1976 (TO-220FP) low on-resistance fast switching speed wide safe operating area (SOA) gate-source voltage VGSS = ±30 V simple drive requirements easy to parallel

mosfet low vgs 1A

Contextual Info: 2SK1973F5 h y V v 7»$ /Transistors 2SK 1973F5 y ij □ > N f * * Jl MOS K7 > y 2 2 Silicon N-channel MOSFET ^ < y ^ /Switching • i'i-ffi^'Ü H /D im en sio n s U n it: mm 1) 1ft* 2) i S i i X - f v ^ ^ ^ t " — Ko 3) SOA 4) iE i* [is & * ''fs a m o 5)

2SK197

Contextual Info: HITACHI 2SK197 SiUtCON N-CHANNEL JUNCTION F£T VH F A M PLIFIER , M IXER i „ S,lé,‘ls l Ç r f i “ u «. i* * 0 -0 .Í , j. aus ; tu - . 1 j .0 ^ 0 9 5 , «J ! 'S : ß , M . u- U ? <Ut ? Si-.'-*;» 'i i*-.« J Oí -, } - - :* MPAK A BSO LU TE MAXIMUM RATINGS ¡

2SK1971

Abstract: 2SK1971-E PRSS0004ZF-A
Contextual Info: 2SK1971 Silicon N Channel MOS FET REJ03G0990-0300 Rev.3.00 May 13, 2009 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control

Contextual Info: 2SK1975 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30.0 I(D) Max. (A)10.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)80.0 Minimum Operating Temp (øC)-55

2SK1971

Contextual Info: 2SK1971 Silicon N Channel MOS FET Application TO–3PL High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter,Motor Control

Hitachi DSA00279

Contextual Info: 2SK1971 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline

Hitachi DSA002780

Contextual Info: 2SK1971 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline

Contextual Info: 2SK197YE Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)18Ê I(D) Max. (A)20m I(G) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)125þ I(GSS) Max. (A)10n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Hitachi DSA001652

Contextual Info: 2SK1971 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control

mospet

Abstract: 2SK1973 marking ADMI marking aa fet 5c05r
Contextual Info: ROHm S p e c ific a tio n TfiSÖRST OOOßT'iß HBö I-IOSFET TYPE. DESCRIPTION. APPLICATION. ABSOLUTE MAXIMUM ol ? T yp e P ro d u c ts Tentative 1. 2. 3. 4. 1 Page IRH n 2SK1973 2 SK 1 9 7 3 S i l i c o n N —Channel M O S S w itc h in g . RATINGS T a = 2 5 IC

2SK1973F5

Abstract: GD10 J-10
Contextual Info: h7 > £ /Transistors 2SK1973F5 2SK1973F5 v U □ > N 9 -V MOS Jg«!Mii& h 7 > y Z * Silicon N-channel MOSFET 7s -i y > ^ffl/Switching • W fN 'üS/'D im ensions Unit : mm 1) 2) ¡ t i l X - f 7 K„ 3) S O A «fJKt'o 4) 5) • Features 1) Low on-resistance.

Mosfet FTR 03-E

Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
Contextual Info: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP

2SK1971

Abstract: DSA003639
Contextual Info: 2SK1971 Silicon N-Channel MOS FET ADE-208-1338 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control