MOSPET Search Results

3160E

Abstract: CA3160AT 4007A CA 3140 OP AMP mospet
Contextual Info: & CA3160, CA3160A 4MHz, BiMOS Operational Amplifier W Î t t l MOSPET Inpilt/CMOS OlltpUt November 1996 Features Description • MOSFET Input Stage Provides: The CA3160A and CA3160 are integrated circuit operational amplifiers that combine the advantage of both CMOS and bipo­

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Abstract: PdP025
Contextual Info: Philips Semiconductors Product specification PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSPET in a 3 pin plastic surface mount envelope, intended as a

irfg 40

Abstract: IRFG113 9396
Contextual Info: H E D | 4Ô5S45S 5 | Data Sheet No. PD-9.396B INT ERNATIONAL R EC T IFIER INTERNATIONAL RECTIFIER I O R T -39-13 IRFGHO HEXFET TRANSISTORS IRFG113 4 N-CHANNEL POWER MOSPETs 14 LEAD D U AL-IN-LIN E QUAD CERAM IC SID E BRAZED PACKAGE 100 Volt, 0.8 Ohm , 1.0 Ohm

2SK1394

Abstract: FP10V25 ITO-220
Contextual Info: LVXv V —X /\°7-M0SFET LVX Series Pow er MOSPET + x > / \ > x ^ > h a OUTLINE DIMENSIONS 2SK1394 [FP10V25] 250V 10A •A *S M Ciss fi'/J v ÿ lïo f ê l d f D ; W 7 ’ X B C D A * S * i) ^ J ^ l/io •3aa«fflwä • Itfflg g , S J fflW lP lfflD C /D C Z iy A '-S '

QCXB00Z

Abstract: RL7556 EL7556
Contextual Info: 4 P ro g ra m m a ti* C P j} P o ^ te r $ u ffty U n it tornii Features General Description • • • • • • • • • • • • • • • • The EL7556C is an adjustable synchronous DC:DC switching regula­ tor optimized for a 5V input and 1.0-3.8V output. By combining

IRF74D

Abstract: 2N39D6 rfid based toll tax ADP3328 ADP33 329d IRF74D4 IRF7404 NDP602 ADP3319
Contextual Info: DEVICES FAX-aN-DEMAND HOTLINE - Page r-. ANALOG ~ DEVICES PrecisionVoltage RegulatorController ADP3310 FEATURES :!:1.5% Accuracy Over Line, Load and Temperature Low gOOJ.1A Typical! Quiescent Current Shutdown Current: 1 J.1A(Typical! Stable with 10 J.1FLoad Capacitor

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Contextual Info: IRFS650A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS = 200V

Contextual Info: SSU3N80A A d vanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V qss = 80 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 |iA M ax. @ VOS = 800V

SSS7N80A

Abstract: mospet
Contextual Info: SSS7N80A Advanced Power MOSFET FEATURES VDss - 800 V • Avalanche Rugged Technology ^ D S o n = ■ Lower Input Capacitance _p ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25fiA (Max.) @ Vos = 800V ■ Low RDsioNj : 1 472 Q (Typ.)

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Abstract: 362 N MOSFET IRFS740A
Contextual Info: IRFS740A Advanced Power MOSFET FEATURES ^D SS • ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ ■ Lower Leakage Current : 10 jjA Max. @ Lower Rds«*^ : 0.437 £2 (Typ.)

18261

Abstract: IRFF130 IRFF131 IRFF132 IRFF133
Contextual Info: 3 |t | 3 û 75[]ô 1 0 0 1 0 2 5 e! b ~ 38 750 81 G E S O L I D S T A TE 0 1 E 18259 Standard Power M O S F E T s _ IRFF130, IRFF131, IRFF132, IRFF133 D File N um ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

2N06

Contextual Info: 2 3 H a r r i s F L 2 N 0 5 R F L 2 N 0 6 N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Features • R Package 2A, 50V and 60V T O -20 5 A F • RDS on = 0 .9 5 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

induction cooker fault finding diagrams

Abstract: TC227 compressor catalogue Vernitron TRANSDUCER b2 str 1265 smps power supply circuit of tv ADC0804-1CD TC225 tesla MAa 741 SPICE model NTC Inrush Current Limiters Thermistor XR558CP
Contextual Info: BOOK IC11 LINEAR PRODUCTS page Selection guide Functional in dex. 5 Numerical in d e x .

Contextual Info: • 4303571 D O S ^ O S g A u g u s t h a r r i bS4 ■ HAS 2N6895 s P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 1 9 9 1 Features Package • -1.16A , -10 0 V • l'DS(on = TO-205AF BOTTOM VIEW 3 .6 5 0 • SOA is Power-Dissipation Limited

IRF650A

Abstract: mospet
Contextual Info: IRF650A Advanced Power MOSFET 200 V R ^ , = 0.085 £i lD = 28 A FEATURES BVdss = • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max. @ VDS= 200V

p-channel 250V 30A power mosfet

Abstract: mospet
Contextual Info: SFF9244 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 |oA Max. @ VDS = -250V ■ Lower R0S(on) : 0.549 fi(T y p .)