9396 Search Results

200X200

Abstract: 35SGQ045 c 1384
Contextual Info: PD -93963A 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ =125°C 0.79 V TJ,Tstg Operating and storage -55 to 150

AN-994

Abstract: IRG4BH20K-S
Contextual Info: PD -93960 IRG4BH20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

IRLML5203 IR

Abstract: IRLML5203 IRLML5203 H IRLML2803 IRLML2402 IRLML6302
Contextual Info: PD - 93967 PROVISIONAL IRLML5203 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier

JANSF2N7426U

Abstract: IRHNA9260 IRHNA93260 JANSR2N7426U
Contextual Info: PD - 93969A IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9260 100K Rads (Si) IRHNA93260 300K Rads (Si)

200X200

Abstract: 35SGQ045
Contextual Info: PD -93963 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 35SGQ045 Units IF AV 35 A VRRM 45 V 300 A 0.74 V IFSM @ tp = 8.3ms half-sine VF @ 35Apk, TJ =125°C TJ,Tstg Operating and storage -55 to 150

Contextual Info: PD - 93962A IRFP3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S HEXFET® Fifth Generation Power MOSFETs from

Contextual Info: PD-93963C 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Description/Features Major Ratings and Characteristics Characteristics 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ = 125°C 0.79 V TJ,Tstg Operating and storage -55 to 150

Contextual Info: PD-93963B 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Description/Features Major Ratings and Characteristics Characteristics 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ = 125°C 0.79 V TJ,Tstg Operating and storage -55 to 150

IRFP3415

Contextual Info: PD - 93962A IRFP3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S HEXFET® Fifth Generation Power MOSFETs from

16SCYQ030C

Abstract: T0-257AA PD-93964
Contextual Info: PD-93964 16SCYQ030C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 30V Major Ratings and Characteristics Characteristics Description/Features 16SCYQ030C Units IF AV 16 A VRRM (Per Leg) 30 V IFSM @ tp = 8.3ms half-sine (Per Leg) 150 A 0.48 V VF @ 15Apk, TJ =125°C

irlml2402

Abstract: IRLML5203 irlml5203 H IRLML6302
Contextual Info: PD - 93967A PROVISIONAL IRLML5203 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier

Contextual Info: PD-93966A 30SLJQ030 JANS1N7078U3 JANTX1N7078U3 JANTXV1N7078U3 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 30Amp, 30V Ref: MIL-PRF-19500/765 Major Ratings and Characteristics Description/Features Characteristics The 1N7078U3 center tap Schottky rectifier has been

Contextual Info: PD - 93966 SCHOTTKY RECTIFIER 30SLJQ030 HIGH EFFICIENCY SERIES 30 Amp, 30V Major Ratings and Characteristics Characteristics Description/Features 30SLJQ030 Units IF AV 30 A VRRM 30 V IFSM @ tp = 8.3ms half-sine 150 A VF @ 30Apk, TJ =125°C 0.57 V TJ, Tstg Operating and storage -55 to 150

Contextual Info: PD-93964A 16SCYQ030C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 30V Major Ratings and Characteristics Characteristics Limits Description / Features IF AV 16 A VRRM (Per Leg) 30 V IFSM @ tp = 8.3ms half-sine (Per Leg) 150 A 0.54 V VF @ 16Apk, TJ =125°C

35SCGQ045

Contextual Info: PD -93965 35SCGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 35SCGQ045 Units IF AV 35 A VRRM (Per Leg) 45 V IFSM @ tp = 8.3ms half-sine (Per Leg) 200 A 0.74 V VF @ 30Apk, TJ =125°C

IRFP3415

Contextual Info: PD - 93962 IRFP3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S HEXFET® Fifth Generation Power MOSFETs from

irfp3415

Abstract: ISD 1400 d
Contextual Info: PD - 93962A IRFP3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S HEXFET® Fifth Generation Power MOSFETs from

IC OZ 9936

Abstract: to262 pcb footprint IRG4BH20K-L AN-994
Contextual Info: PD -93961 IRG4BH20K-L Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

IRHNA9260

Abstract: IRHNA93260 JANSF2N7426U JANSR2N7426U
Contextual Info: PD - 93969 IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9260 100K Rads (Si) IRHNA93260 300K Rads (Si)

35SCGQ045

Contextual Info: PD-93965A 35SCGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics IF AV Description/Features 35SCGQ045 Units 35 A VRRM (Per Leg) 45 V IFSM @ tp = 8.3ms half-sine (Per Leg) 200 A 0.74 V VF @ 30Apk, TJ =125°C

Contextual Info: PD -93961 IRG4BH20K-L Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

Contextual Info: PD - 93969A IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9260 100K Rads (Si) IRHNA93260 300K Rads (Si)

AN-994

Abstract: IRG4BH20K-S
Contextual Info: PD -93960 IRG4BH20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

16SCYQ030

Abstract: 16SCYQ030C T0-257AA DM 0365 R
Contextual Info: PD-93964A 16SCYQ030C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 30V Major Ratings and Characteristics Characteristics Limits Description / Features IF AV 16 A VRRM (Per Leg) 30 V IFSM @ tp = 8.3ms half-sine (Per Leg) 150 A 0.54 V -55 to 150 °C VF @ 16Apk, TJ =125°C