DQ131 Search Results

ite 518 16pin soic

Contextual Info: DS1608 DALLAS SEMICONDUCTOR • Unique 1-wire interface requires only one port pin for communication • 3-wire I/O interface for high speed data communica­ tions vccn: 1 Pô n r 2 16 J L I IS n n X1 RST a t 3 14 DQ131 4 13 • Contains real-time clock/calendar in binary format

Contextual Info: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability

31-oq

Abstract: 7C342-25 CY7C342-35HMB 7C342-35 CY7C342 CY7C342B OQ11
Contextual Info: CY7C342 CY7C342B rif CYPRESS 128-Macrocell M AX EPLD Features Functional Description • 128 macrocells in 8 LABs • 8 dedicated inputs, 52 bidirectional I/O pins • Programmable interconnect array • 0.8-micron double-metal CMOS EPROM technology CY7C342

Contextual Info: UG34C322 4 4GTG 16M Bytes (4M x 32) DRAM 72Pin SODIMM based on 4M X 4 Features General Description The UG34C322(4)4GTG is a 4,149,304 bits by 32 SODIMM module.The UG34C322(4)4GTG is assembled using 8 pcs of 4M x 4 2K/4K refresh DRAMs in 24-pin TSOP package mounted on a 72pin printed circuit board.

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

Contextual Info: M IC R O N 512K 512K X MT20D51240 40 DRAM MODULE 40 DRAM FAST PAGE MODE MT20D51240 LOW POWER, EXTENDED REFRESH (MT20D51240 L) FEATURES • • • • • • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance, CMOS silicon-gate process.

2m137

Contextual Info: MT90733 CM OS @ DS3 Framer DS3F MITEL Preliminary Information Features ISSUE 3_ January 1996 M aps broadband payloads in the DS3 form at O rdering Inform ation DS3 payload access in eith er bit-serial or n ibble-parallel m ode MT90733AP 68 Pin PLCC

1186C

Abstract: cxd1135q cxd1130q
Contextual Info: CXD1186CQ/CR SONY« C D - R O M Decoder Description CXD1186C is a CD-ROM decoder LSI. CXD1186CQ 80pln QFP Plastic Features CXD1186CR 80pin VQFP (Plastic) • Corresponds to CD-ROM, CD-I and CD-ROM XA formats. • Real time error Correction. (Erasure Correction

Contextual Info: KMM332F400CS-L KMM332F41OCS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic Part Identification

Contextual Info: ADVANCE M IC R O N 4 MEG DRAM MODULE X M T10D440 40 DRAM M OD ULE 4 MEG x 40 DRAM FAST PAGE MODE FEATURES • • • • • Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins TTL-compatible

TME 57

Abstract: DQ131 45VCci a81s DQ111 A5173
Contextual Info: m EDI9F232256BC 1 2x256Kx32 SRAM Module x ELECTRONIC DESIGNI N C. 2x256Kx32 Static RAM CMOS, High SpeedModule Features The EDI9F232256B is a high speed 16 megabit Static RAM module organized as 2x256K words by 32 bits. This module is constructed from sixteen 256Kx4 Static RAMs in SOJ

Contextual Info: KMM332F400BS-L KMM332F410BS-L DRAM MODULE KMM332F400BS-L & KMM332F410BS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0BS is a 4Mx32bits Dynamic Part Identification

Contextual Info: DRAM MODULE KMM332V400AJ/AT KMM332V400AJ/AT Fast Page Mode 4Mx32 DRAM DIMM Low Power, 4K Refresh , 3.3V GENERAL DESCRIPTION FEATURES The S am sung K M M 332V 400A is a 4M bit x • Performance Range: tRAC 60ns 70ns 80ns 32 D ynam ic RAM high density m em ory module.

Contextual Info: KMM332V400CS-L KMM332V41OCS-L DRAM MODULE KMM332V400CS-L & KMM332V410CS-L with Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M M 3 3 2 V 4 0 1 0 C S is a 4 M x3 2 b its D yn a m ic

msi motherboard circuit diagram

Abstract: MSI MOTHERBOARD schematic diagram MSI MOTHERBOARD SERVICE MANUAL amd MOTHERBOARD SERVICE MANUAL L64811 circuit diagram of msi motherboard MOTHERBOARD msi CIRCUIT diagram intel D102 motherboard sparkit-40 l64863
Contextual Info: • 5304A04 LSI LOGIC 0013137 531 El LLC 53D4AD4 001313A 47fl LLC LSI Logic has derived the material in this manual, which describes the L64863 Clock Chip, from documents provided by Sun Microsystems, Inc. The chip described in this manual is guaranteed to function as described only when

DQ131

Abstract: MT48LC16M16A2TG8E
Contextual Info: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron

J32CG

Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
Contextual Info: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0

Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8

Contextual Info: KMM332V400CS-L KMM332V410CS-L DRAM MODULE KMM332V400CS-L & KMM332V410CS-L with Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V40 1 0CS is a 4Mx32bits Dynamic RAM high density memory module. The Samsung

Contextual Info: & M i c r o c h 2 4 A A 0 1 /0 2 i p 1K/2K 1.8V CMOS Serial EEPROMs PACKAGE TYPE nFEATURES • Single supply with operation down to 1.8V • Low power CMOS technology - 1 mA active current typical - 10 standby current typical at 5.5V - 3 |iA standby current typical at 1.8V

SL36S4B8M2F-A60

Abstract: SL36T4B8M2F-A60 DQ27-30 DQ18-21
Contextual Info: SL36 T/S 4B8M2F-A60 8M X 36 Bits DRAM SIMM with Extended Data Out (EDO) FEATURES • Performance range: tCAC tRC tRAC 60ns 15ns • • • • • • • • GENERAL DESCRIPTION The SiliconTech SL36(T/S)4B8M2F-A60 is a 8M x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).

DQ2060

Abstract: DC1065 EB285 EBSA-285 R164 SA110 B20B20 A59A59 CPU-A13 CPUD22
Contextual Info: A B C D COPYRIGHT C 8 1997 DIGITAL EQUIPMENT CORPORATION 8 16 17 18 19 20 21 sht sht sht sht sht sht 7 CHK CHANGE NO. REV CPU, CPU_, a Block Address X-Bus XBUF_, have PCI +3V Stand - +2V, - - - TAG_,RST_ - - 6 bidirects this 5 is Debug Port their Serial Spare

HMD8M36M18

Abstract: HMD8M36M18G
Contextual Info: HANBit HMD8M36M18G 32Mbyte 8Mx36 72-pin FP with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M18, HMD8M36M18G GENERAL DESCRIPTION The HMD8M36M18G is a 8M x 36bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAM in 24-pin SOJ packages and two CMOS 4Mx 4bit Quad-CAS DRAM in 28pin SOJ packages