DQ113 Search Results

Contextual Info: b3E D 7 tn ? D ? b LC83010N, 83010NE DQ11337 bfiO « T S A J SANYO 3071 3174 S EMI CONDUCTOR C0RP C M O S LSI Audio Digital Signal Processor 3945A O ve rvie w The LC83010N, 83010NE is a sin g le -ch ip d ig ita l signal processor DSP . It is designed fo r use in the

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31^ DQ113T1 E • | BYV43_SERIES T-03-19 ' SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero

Contextual Info: HITACHI/ LINEAR DEVICES 2bE J> OOliaST 4 HA21001 M S- - T -T7 -O S -O S - VHF/UHF Tuner Use G aAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

DQ111

Contextual Info: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

Contextual Info: SONY CXP875P40 CMOS 8-bit Single Chip Microcomputer Description The CXP875P40 is a CMOS 8-bit micro-computer which consists of arithmetic coprocessor, A/D converter, serial interface, timer/counter, time base timer, vector interruption, high precision timing

DQ124

Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Contextual Info: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

DQ112

Abstract: UG016C14488HSG-6 DQ100 DQ88
Contextual Info: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

Contextual Info: M IC S Q N I IIW - 1 W IH • t s em c o n o u c to r MT2D88C25632, MT4D88C5123Z 1MBr 2MB DRAM CARDS n c DRAM CARD 1, 2 MEGABYTES 256K, 512K x 32; 5.0V FAST PAGE MODE FEATURES • Low power • JEDEC-standard 88-pin DRAM card pinout • Polarized receptacle connector

J32CG

Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
Contextual Info: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0

Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8

Contextual Info: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8

RC SERVO CIRCUIT

Abstract: 32P4752 em 231 rtd rc servo RC SERVO digital CIRCUIT pdcr 900 real time application and product for fir
Contextual Info: SSI 32P4752/4756 ¿ iíkm ó yskm s Read Channel with 1,7 ENDEC, 4-burst Servo A TDK Group/Company January 1995 DESCRIPTION FEATURES The SSI 32P4752/4756 devices are high performance BiCMOS single chip read channel ICs that contain all the functions needed to implement a complete zoned

d472 TRANSISTOR

Abstract: transistor d472 74X374 intel 80386dx WD90C30 E472H stp 1016 a872 TRANSISTOR equivalent d472 OC72
Contextual Info: W D8110Æ V INTRODUCTION 1.0 INTRODUCTION The WD811Q/LV System Controllers are designed to provide a high performance, single chip. sys­ tem controller supporting all 80486SX, 80486DX, 80386SX and 80386DX CPUs In AT bus based Desktop/Lapkjpi'Notetoook/Pen-based systems.

smart modular

Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
Contextual Info: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

PCF84C00

Abstract: MAB8048 PCF84C21 PCF84C41 PCF84C81 COC11
Contextual Info: T T 3ME D • PCF84C00 PCF84C21/C PCF84C41/C PCF84C81/C 711002b QG11373 3 I PHILIPS INTERNATIONAL 1 BUS " ~ P H P M ct - o a SINGLE-CHIP 8-BIT MICROCONTROLLERS WITH l2C-BUS INTERFACE DESCRIPTION An advanced CMOS process is used to manufacture the PCF84C00, PCF84C21/C, PCF84C41/C and

SiS301

Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
Contextual Info: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.

Contextual Info: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation

tsop 138

Abstract: DQ114
Contextual Info: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation

DQ77

Abstract: SMART Modular Technologies SM51441000LP-07 SM51441000LP-08 dram memory module 1993 DQ114
Contextual Info: SM51441000LP January 1993 Rev 0 SMART Modular Technologies SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

1041LV

Abstract: 1041LW 1141LV 1141LW 41LK 41LL 41LM 41LV 41LW 41LX
Contextual Info: AT&T Interface Products 41LK, 41LL, and 41LM Electrical Characteristics continued Table 5-2. 41 LK, 41 LL, and 41 LM Voltage and C urrent Characteristics (Driver) T a = 0 °C to 85 °C. Sym bol Min Typ Max Unit VOL VOH — 3.0 — 3.0 4.0 2.0 V o h - 0.8+

dq96

Contextual Info: SM544044004X5GU June 1997 Rev 1 SMART Modular Technologies SM544044004X5GU 64MByte 4M x 144 CMOS DRAM Module General Description Features The SM544044004X5GU is a high performance, 64-megabyte dynamic RAM module organized as 4M words by 144 bits, in a 100-pin, dual readout, leadless,