DQ100 Search Results

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

DQ111

Contextual Info: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

k 1358

Abstract: 56FBGA
Contextual Info: 32 Mbit Burst Mode Concurrent SuperFlash ComboMemory SST34WA32A3 / SST34WA32A4 / SST34WA3283 / SST34WA3284 Advance Information FEATURES: • Flash Organization: – 2M x 16 • PSRAM Organization: – 8 Mbit: 512k X 16 – 16 Mbit: 1M x 16 • Single Voltage Read and Write Operations

BQ2001

Contextual Info: Q Series Data Sheet 66 – 132 Watt DC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 V • Class I equipment • Extremely high efficiency of up to 90%

DQ124

Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Contextual Info: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

DQ112

Abstract: UG016C14488HSG-6 DQ100 DQ88
Contextual Info: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

Contextual Info: M IC S Q N I IIW - 1 W IH • t s em c o n o u c to r MT2D88C25632, MT4D88C5123Z 1MBr 2MB DRAM CARDS n c DRAM CARD 1, 2 MEGABYTES 256K, 512K x 32; 5.0V FAST PAGE MODE FEATURES • Low power • JEDEC-standard 88-pin DRAM card pinout • Polarized receptacle connector

Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8

D4512

Abstract: d4512844 D29D31 DQ200-V D45128
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: ,uPD45128441 are assembled.

GR-1244-CORE

Abstract: GR-253-CORE IDT82V3280 GR-1377-CORE 19.440 MHz TCXO
Contextual Info: WAN PLL IDT82V3280 Version 2 June 19, 2006 6024 Silver Creek Valley Road, San Jose, CA 95138 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 284-2775 Printed in U.S.A. 2006 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry

48 VOLT 20AMP battery charger

Abstract: lm1785 BP1601 ZY2105 qts48t46096 PSR53-7 HBD060ZGE-A MPB150 40IMX35D05D15-8 FXP7000-48-S
Contextual Info: Z-One Digital Power Analog POL Isolated DC-DC Front Ends Chassis Mount PoE Ruggedized CompactPCI Renewable Energy Network Power Systems Intelligent Controls 2010 Online Product Update Table of Contents Point-Of-Load Conversion & Management Bus Programmable Digital POL Solutions

MB81C4256

Contextual Info: February 1990 Edition 1.0 DATA SHEET FUJITSU MB81C4256-70U-80U-10U-12L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu M B81C4256 is a CM OS, fully decoded dynam ic RAM organized as 262,144 words x 4 bits. The MB81C4256 has been designed fo r mainframe memories,

Contextual Info: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8

Contextual Info: WAN PLL IDT82V3285 Version March 02, 2009 6024 Silver Creek Valley Road, San Jose, CA 95138 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 284-2775 Printed in U.S.A. 2006 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry

DIODE SMD v105

Abstract: Transistor smd BQ 22 EQ2660-9R BQ2001 uhalp Connector retention clips HZZ01209 DR 25 diode specs JM082 BCD20011-G
Contextual Info: Q Series Data Sheet 66 – 132 Watt DC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 V • Class I equipment • Extremely high efficiency of up to 90%

MT18DT8144G

Contextual Info: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM

gqxxxx

Abstract: uster E131905 BQ2001 CH-8610
Contextual Info: File E131905 Vol. 15 Sec. 3 and Report Page 1 Issued: Revised: 1996-05-07 2008-04-25 DESCRIPTION PRODUCT COVERED: * USR/CNR: DC/DC Power Supply, Q Series represented by YQXXXX-WZ where Y represents letters B, C, D, E, G, or 48, X represents a number 0-9 which

Q2000 dc dc converter

Abstract: BQ2001
Contextual Info: Q Series Data Sheet 66 - 132 Watt DC-DC Converter Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 VDC • Class I equipment • Extremely high efficiency of up to 90%

BQ2001

Contextual Info: Q Series Data Sheet 66 - 132 Watt DC-DC Converter Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 VDC • Class I equipment • Extremely high efficiency of up to 90%

smart modular

Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
Contextual Info: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

EQ2660-9R

Abstract: BQ2660-9R CQ2660-9R BQ2320-9R Q2000 dc dc converter BQ2540-9R BQ2001 DQ100 RIA12 BQ2001-9R
Contextual Info: Q Series Data Sheet 66 – 132 Watt DC-DC Converter Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 VDC • Class I equipment • Extremely high efficiency of up to 90%

p720C

Contextual Info: WAN PLL IDT82V3280 Version 1 September 28, 2005 6024 Silver Creek Valley Road, San Jose, CA 95138 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 284-2775 Printed in U.S.A. 2005 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry