DQ112 Search Results

in 4742A

Abstract: 4742A S253c capacitor 9013 npn 32P4742A PDCR 143
Contextual Info: SSI 32P4742/4742A/4746/4746A Read Channel with 1,7 ENDEC, 4-burst Servo Sam M bns A TDK G roup/C om pany Advance Information January 1995 D E S C R IP T IO N FEATURES The SSI 32P4742/4742A/4746/4746A devices are high performance BiCMOS single chip read channel

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

DQ111

Contextual Info: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

STR WG 253

Abstract: PDCR 143
Contextual Info: SSI 32P4742/4742A/4746/4746A Read Channel with 1,7 ENDEC, 4-burst Servo ¿ ik m s y s h t is A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES The SSI 32P4742/4742A/4746/4746A devices are high performance BiCMOS single chip read channel

Contextual Info: CXA1122AM SONY. VTR RF M odulator Description The CXA1122AM is a VTR RF modulator fo r the VHF band, and is used to convert frequencies of audio signals and video signals. This modulator consists of circuits such as video clamp, white clipping, a carrier oscillator, video

DQ124

Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Contextual Info: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

DQ112

Abstract: UG016C14488HSG-6 DQ100 DQ88
Contextual Info: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8

Contextual Info: HITACHI/ LINEAR DEVICES 2bE D 0011558 HA13116- T-'K-OS'-Ol 20 W BTL Audio Power Amplifier The HA13116 is a high output and low distortion power IC designed for component car stereo amplifiers. At 13.2 V to 4 £2 load, this power IC provides an output power of 16 W with 1 %

Contextual Info: 42E » JH SAMSUNG ELECTRONICS INC KM75C103A 7U_4'1.M2 _00].Ji5bS 3 M S M G K CMOS PROGRAMMABLE FLAG FIFO :%-zs P r o g r a m m a b le - F la g s , 2 K X 9 F IF O FEATURES DESCRIPTION • Flrst-ln-Flrst-Out Dual Port Memory —2 K x 9 Organization • Very High Speed independent of depth/width

Contextual Info: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8

Contextual Info: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell

smart modular

Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
Contextual Info: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

vl82c10

Contextual Info: VLSI T e c h n o lo g y inc. ADVANCE INFORMATION VL82C316 SCAMP II SYSTEM CONTROLLER FEATURES • Compatible with 386SX-based PC/AT compatible systems * Up to 33 MHz system clock • Replaces 11 peripheral devices on the motherboard: - Two 82C37A DMA controllers

Contextual Info: uim D 1H 1M L O & i^ S I Final Electrical Specifications LTC1325 TECHNOLOGY M icroprocessor-Controlled Battery M a na g e m ent System J u n e 1994 F€ATUR€S DCSCftlCTIOn • Fast Charge Nickel Cadmium, Nickel Hydride or Lead Acid Batteries under joP Control

SiS301

Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
Contextual Info: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.

Contextual Info: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation

tsop 138

Abstract: DQ114
Contextual Info: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation

Contextual Info: - PRELIMINARYMarch 1995 Edition 3.0 PRO DUCT PROFILE SHEET — FUJITSU M B 8 1 1 7 4 0 0 A -50/-60/-70 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400A is a fully decoded CMOS Dynamic RAM DRAM that contains

DQ77

Abstract: SMART Modular Technologies SM51441000LP-07 SM51441000LP-08 dram memory module 1993 DQ114
Contextual Info: SM51441000LP January 1993 Rev 0 SMART Modular Technologies SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

Contextual Info: Whol HEW LETT mLUM PACKARD Avantek Products Double Balanced Mixer 1.0 to 500 MHz Technical Data UMX-570 Features Description Pin Configuration • 40 dB LO to RF Isolation • 5.5 dB Conversion Loss/ Noise Figure • +34 dBm Input Intercept Point The UMX Series double-balanced

dq96

Contextual Info: SM544044004X5GU June 1997 Rev 1 SMART Modular Technologies SM544044004X5GU 64MByte 4M x 144 CMOS DRAM Module General Description Features The SM544044004X5GU is a high performance, 64-megabyte dynamic RAM module organized as 4M words by 144 bits, in a 100-pin, dual readout, leadless,