DQ111 Search Results

sanyo LCD camera display

Abstract: LC5860 sanyo lcd clock display
Contextual Info: SANYO SEMI CONDUCTOR CORP b3E D • 7Tì707b DQ111G1 bb3 I TSAJ CMOS 4-BIT SINGLE-CHIP MICROCOMPUTERS LC5860/5870 SERIES Overview The LC5860/5870 Series CMOS 4-bit single-chip micro­ computers are ideal for controlling LCD displays. Sanyo's proprietary LCD display circuit technology controller/

Contextual Info: -P R E L IM IN A R Y October 1995 Edition 1.1 = FUJITSU PRODUCT PROFILE SHEET MB 8 116165 A- 60/-70 CMOS 1M X 16BIT HYPER PAGE M O D E DYNAMIC RAM CMOS 1,048,576 x 16BIT Hyper Page Mode Dynamic RAM The Fujitsu MB8116165A is a fully decoded CMOS Dynamic RAM DRAM that contains

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

Contextual Info: IBM14N1372 IBM14N3272 IBM14N6472 High Perform ance SRAM Modules Features • 256K, 512K, and 1MB secondary cache module family using Synchronous and Asynchronous SRAMs. • Organized as a 32K, 64K, or 128K x 72 package on a 4.3” x 1.1”, 160-lead, Dual Read-out DIMM

DQ111

Contextual Info: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,

BPW84

Abstract: S288P BPW75 BPW87 BPW28 BPW86 LT 5239 H BPW47B BPW41N IR bpw77
Contextual Info: TEL E FU NK EN E L E C T R O N I C 4ME T> m ÛTEOCnti 0D1117D 3 D1ALGG Photo Detectors Phototransistors in Clear Plastic Package Phototransistors with Filter M atched for G a A s IR ED s in Plastic Package Package Type • C h a ra c te ristic s Photo sensitive

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

Contextual Info: FDC37C93XFR SMC ADVANCE INFORMATION STANDARD M IC R O SY ST EM S CORPORATION Plug and Play Compatible Ultra I/O Controller with Fast IR FEATURES ISA Plug-and-Play Standard {Version 1.Oa Compatible Register Set Soft Power Management, SMI Support ACCESS.bus Support

TME 57

Abstract: DQ131 45VCci a81s DQ111 A5173
Contextual Info: m EDI9F232256BC 1 2x256Kx32 SRAM Module x ELECTRONIC DESIGNI N C. 2x256Kx32 Static RAM CMOS, High SpeedModule Features The EDI9F232256B is a high speed 16 megabit Static RAM module organized as 2x256K words by 32 bits. This module is constructed from sixteen 256Kx4 Static RAMs in SOJ

Contextual Info: MITSUBISHI LSIs M5M564R16CJ.TP-10,-12,-15 í f at Nc*,ce » • uSume Pdid 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M564R16C is a family of 65536-word by 16-bit static RAMs, fabricated with the high performance CMOS process and

TI AIH

Abstract: R 161 730 000
Contextual Info: O K I Semiconductor MSM51 V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17160 is OKI's CMOS silicon gate process technology.

DQ124

Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Contextual Info: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

DQ112

Abstract: UG016C14488HSG-6 DQ100 DQ88
Contextual Info: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8

4744AP

Abstract: 4744a 32P4741
Contextual Info: SSI 32P4741 /4744/4744A Read Channel with 1,7 ENDEC, 4-burst Servo s lim s q s b n s A TDK Group/Company January 1995 DESCRIPTION FEATURES The SSI 32P4741/4744/4744A devices are high performance BiCMOS single chip read channel ICs that contain all the functions needed to implement a

Contextual Info: HITACHI/ LI NEA R D E V I C E S 2bE ]> 4Mcib2Q 2 Q 01113R 1 H A 1 2 1 3 2 M P - p n - z i A/D, D/A Converter with Built-in S/H Circuit Pin Arrangement Description T h e H itach i H A 12132 is a 16 b it A /D , D /A converter operating on a single 5 V supply. It is

DQ2060

Abstract: DC1065 EB285 EBSA-285 R164 SA110 B20B20 A59A59 CPU-A13 CPUD22
Contextual Info: A B C D COPYRIGHT C 8 1997 DIGITAL EQUIPMENT CORPORATION 8 16 17 18 19 20 21 sht sht sht sht sht sht 7 CHK CHANGE NO. REV CPU, CPU_, a Block Address X-Bus XBUF_, have PCI +3V Stand - +2V, - - - TAG_,RST_ - - 6 bidirects this 5 is Debug Port their Serial Spare

MT4C1670

Contextual Info: MICRON TECHNOLOGY INC 5SE T> • falllSHI DD0HS21 SbT ■ URN MT4C1670/1 L 64K X 16 DRAM MICRON rn TECHNOLOGY INC. DRAM 6 4 K x 1 6 DRAM NEW T -w -zb -n STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH • Industry standard xl6 pinouts, timing, functions and packages

Contextual Info: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8

MAGNETIC HEAD tape deck

Abstract: BA3402 audio MAGNETIC HEAD car wiring diagram MAGNETIC HEAD audio Y58M ZIP16 MAGNETIC HEAD 8 channel equalizer MAGNETIC HEAD impedance
Contextual Info: Audio ICs Dual-channel, auto-reverse tape preamplifier BA3402 T h e B A 3 4 0 2 is a d u a l p r e a m p lifie r d e v e lo p e d fo r a u to -r e v e r s e c a r ta p e d e c k s . A n e le c tr o n ic s w itc h on th e c h ip s w itc h e s b e tw e e n th e fo rw a rd a n d re v e rs e h e a d s , a n d this h a s th e b e n efits o f g re a te r reliab ility, e a s ie r w iring , lo w er

MT18DT8144G

Contextual Info: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM

Contextual Info: D S 1 2 3 0 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1 230Y/ AB 256K N onvolatile SRAM PIN ASSIGNMENT A14 111 281 A12 112 E 271IW A7 113 261IA13 A6 114 251IA8 A5 115 241IA9 A4 116 231IA11 A3 117 221I A2 118 211I A10 A1 119 201I^ A0 1110 191I DQ7 DQ01111 181I DQe

Contextual Info: 31E D GEC PLESSEY SEMICONDS 37basaaoouw ^FLESSEY W i • H T '5 0 - 0 ° \ S em icon d u cto rs. NJ8820, NJ8820B FREQUENCY SYNTHESISER PROM INTERFACE The NJ8820/NJ8820B is a synthesiser circuit fabricated on the Plessey 5-micron CMOS process and is capable of