UPD45128441 Search Results

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT P D 4 5 1 2 8 4 4 1 - A 7 5 ,4 5 1 2 8 8 4 1 -A 7 5 , 4 5 1 2 8 1 6 3 -A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,uPD45128441-A75, 45128841-A75 and 45128163-A75 are high-speed 134,217,728-bit synchronous dynamic

D4512

Abstract: d4512844 D29D31 DQ200-V D45128
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: ,uPD45128441 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA726 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4532DA726 is a 33,554,432 words by 72 bits synchronous dynam ic RAM module on which 18 pieces of 128 M SDRAM : ,uPD45128441 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA726 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4532DA726 is a 33,554,432 words by 72 bits synchronous dynam ic RAM module on which 18 pieces of 128 M SDRAM : ,uPD45128441 are assembled.

MC-4532DA726

Abstract: MC-4532DA726EF-A10 MC-4532DA726EF-A80 MC-4532DA726EFB-A10 MC-4532DA726EFB-A80 PD45128441 PD45128441G5
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA726 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4532DA726 is a 33,554,432 words by 72 bits synchronous dynam ic RAM module on which 18 pieces of 128 M SDRAM: ,uPD45128441 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA726 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4532DA726 is a 33,554,432 words by 72 bits synchronous dynam ic RAM module on which 18 pieces of 128 M SDRAM : ,uPD45128441 are assembled.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA726 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4532DA726 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128 M SDRAM : ,uPD45128441 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4532DA727 is an 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: ,uPD45128441 are assembled.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD45128441,45128841,45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.

D45128841G5-A80

Contextual Info: PRELIMINARY DATA SHEET / - N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM

30A120

Abstract: D45128 ATEN 1327
Contextual Info: PRELIMINARY DATA SHEET N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD45128441, 45128841, 45128163 are high-speed 134,217,728 bit synchronous dynamic random-access

E0123N

Abstract: E0123N81 elpida DDR2 layout techniques E0124N PD45128163 T101-T102
Contextual Info: USER'S MANUAL HOW TO USE SDRAM Document No. E0123N81 Ver.8.1 Date Published March 2009 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2004-2009 SUMMARY OF CONTENTS CHAPTER 1 PRODUCT OUTLINE .14

PD45128441

Abstract: PD45128441G5-A10-9JF PD45128441G5-A75-9JF uPD45128441G5-A75A-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A75-9JF uPD45128841G5-A75A-9JF PD45128841G5-A80-9JF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD45128441, 45128841 128M-bit Synchronous DRAM 4-bank, LVTTL Description EO The μPD45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 word × bit × bank , respectively.

Contextual Info: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-4564DC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4564DC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of

PD45128441

Abstract: uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD45128441-I, 45128841-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description EO The μPD45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 (word × bit × bank), respectively.

DQ380-V

Abstract: r2a11 DQ500-V
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC727 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C -4 5 6 4 E C 7 2 7 is a 6 7 ,1 0 8 ,8 6 4 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 36 piece s of

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4564DC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4564DC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of

E0123N

Abstract: elpida DDR2 layout techniques Hitachi T104 PD45128163 E0123N80 Hitachi DSA0043 E0124N ELPIDA SDRAM User Manual
Contextual Info: User’s Manual HOW TO USE SDRAM Document No. E0123N80 Ver.8.0 Date Published August 2007 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2001-2007 © NEC Corporation 1998 Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

uPD45128441G5-A75T-9JF

Abstract: uPD45128441G5-A80T-9JF PD45128441-T PD45128441 uPD45128441G5-A10T-9JF uPD45128841G5-A10T-9JF uPD45128841G5-A75T-9JF uPD45128841G5-A80T-9JF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD45128441-T, 45128841-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description EO The μPD45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 (word × bit × bank), respectively.

J0123N

Abstract: J0123 J0124N J0123N81 T101-T102 J10123N81 DQ16-DQ2 J0124 PD45128163 pd4564323
Contextual Info: ユーザーズマニュアル SDRAM の使い方 Document No. J0123N81 Ver.8.1 Date Published March 2009 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2004-2009 User's Manual J10123N81 (Ver.8.1) 2 本資料に記載された情報は半導体製品の動作例、応用例を示したものです。これらの情報をお客様の機器に使用される場合