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    2005 - 0348a

    Abstract: M5M29KD157AKT 56blocks TDA 231
    Text: subject to change. RENESAS CONFIDENTIAL M5M29KD157AKT 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY DESCRIPTION FEATURES The M5M29KD157AKT are 3.3V-only high speed 134,217, 728-bit , . RENESAS CONFIDENTIAL M5M29KD157AKT 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY , CONFIDENTIAL M5M29KD157AKT 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY Flash Memory , high-performance 134,217, 728-bit CMOS boot block Flash memory device, organized as 8,388,608-word by 16- bit . The


    Original     		PDF M5M29KD157AKT 728-BIT 608-WORD 16-BIT) M5M29KD157AKT 728-bit 70ns/25ns 54pin REJ03C0266 0348a 56blocks TDA 231

    2003 - M5M29KE131BVP

    Abstract: No abstract text available
    Text: parametric limits are subject to change. 134,217, 728-BIT (16,777,216-WORD BY 8- BIT / 8,388,608-WORD BY 16- BIT , : This is not a final specification. Some parametric limits are subject to change. 134,217, 728-BIT , is not a final specification. Some parametric limits are subject to change. 134,217, 728-BIT (16 , IV) Flash Memory is 3.3V-only high speed 134,217, 728-bit CMOS boot block Flash Memory. Alternating , parametric limits are subject to change. 134,217, 728-BIT (16,777,216-WORD BY 8- BIT / 8,388,608-WORD BY 16- BIT


    Original     		PDF M5M29KE131BVP 728-BIT 216-WORD 608-WORD 16-BIT) M5M29KE131BVP 64M-bit 48-pin 128M-bit REJ03C0183-0010Z

    2003 - M5M29KE131BTP

    Abstract: 52-pin TSOP
    Text: parametric limits are subject to change. 134,217, 728-BIT (16,777,216-WORD BY 8- BIT / 8,388,608-WORD BY 16- BIT , . 134,217, 728-BIT (16,777,216-WORD BY 8- BIT / 8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY Stacked-uMCP , is not a final specification. Some parametric limits are subject to change. 134,217, 728-BIT (16 , IV) Flash Memory is 3.3V-only high speed 134,217, 728-bit CMOS boot block Flash Memory. Alternating , parametric limits are subject to change. 134,217, 728-BIT (16,777,216-WORD BY 8- BIT / 8,388,608-WORD BY 16- BIT


    Original     		PDF M5M29KE131BTP 728-BIT 216-WORD 608-WORD 16-BIT) M5M29KE131BTP 64M-bit 52-pin 128M-bit REJ03C0206-0001Z 52-pin TSOP

    1996 - 16 bit linear PCM

    Abstract: No abstract text available
    Text: sample frames of 16- bit linear PCM data into 10- bit code words. DSPSE's G.728 implementation offers two additional, non-standard bit rates of 12.8 and 14.4 kbps (8 and 9- bit code words respectively). , are in units of 32- bit words. The MIPs ratings presented Function Encoder (half duplex) require , interface with arrays of 16- bit linear PCM samples and 8-, 9-, or 10- bit code words. G.728 Encoder , 16- bit linear PCM samples into a frame of code words G.728 Decoder G728D_create (.


    Original     		PDF TMS320C3x/ TMS320C3x. 16-kbps 16-bit 10-bit 16-bit 16 bit linear PCM

    2005 - mobile phone

    Abstract: M6MGD15VM34CWG
    Text: subject to change. M6MGD15VM34CWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS mobileRAM Stacked-CSP ( Chip Scale Package , memory is a high-performance 134,217, 728-bit - Flash Page Read CMOS boot block Flash memory device , , 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS , specification. Some parametric limits are subject to change. M6MGD15VM34CWG 134,217, 728-BIT (8,388,608


    Original     		PDF M6MGD15VM34CWG 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD15VM34CWG 128M-bit mobile phone

    2002 - Hitachi DSA00280

    Abstract: No abstract text available
    Text: /300H CPU employing a 32- bit internal architecture as its core, and the peripheral functions required to configure a system. This LSI is equipped with ROM, RAM, a 16- bit timer, 8- bit timers, a programmable timing , values of the registers are summarized in appendix B, Internal I/O Registers. Rule: Bit order: The MSB is , . 40 2.6.5 Notes on Use of Bit Manipulation Instructions , . 196 Section 8 16- Bit Timer


    Original     		PDF H8/3090 HD64F3090 ADE-602-267 thatH8/3048 H8/3042 Hitachi DSA00280

    1996 - g.728

    Abstract: G-728
    Text: sample frames of 16- bit linear-PCM data into 10- bit code words. G.728 has numerous applications in , Algorithm category: Vocoder · Requirements: All memory requirements are in units of 16- bit words. The , and decoder interface with arrays of 16- bit linear-PCM samples and 10bit code words. G , a frame of code words into a frame of 16- bit linear-PCM samples G728_encode (.) Encodes a frame of 16- bit linear-PCM samples into a frame of code words Algorithm Verification · Call DSPSE


    Original     		PDF TMS320C5x TMS320C5x. 16-kbps 16-bit 10-bit 16-bit g.728 G-728

    2005 - R11M3200ARAABG

    Abstract: free mobile phone circuit diagram
    Text: subject to change. R11M3200ARAABG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS mobileRAM Stacked-CSP ( Chip Scale Package , memory is a high-performance 134,217, 728-bit - Flash Page Read CMOS boot block Flash memory device , parametric limits are subject to change. R11M3200ARAABG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS , . R11M3200ARAABG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152


    Original     		PDF R11M3200ARAABG 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD R11M3200ARAABG 128M-bit free mobile phone circuit diagram

    2003 - mobile circuit diagram

    Abstract: transistor marking A21 A20 marking M6MGD13TW34DWG a7 moe free mobile phone circuit diagram
    Text: RENESAS LSIs M6MGD13TW34DWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package , .1.0.48a_bezc RENESAS LSIs M6MGD13TW34DWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT , M6MGD13TW34DWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY , performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 128M- bit


    Original     		PDF M6MGD13TW34DWG 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD13TW34DWG 128M-bit mobile circuit diagram transistor marking A21 A20 marking a7 moe free mobile phone circuit diagram

    2003 - M6MGD137W33TP

    Abstract: No abstract text available
    Text: Renesas LSIs M6MGD137W33TP 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS Mobile RAM & Stacked- µMCP (micro Multi Chip Package) DESCRIPTION The M6MGD137W33TP is a Stacked micro Multi Chip Package (S- µMCP) that contents 128M- bit Flash , .1.0_48a_bbzb Renesas LSIs M6MGD137W33TP 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY 33,554,432- BIT , .1.0_48a_bbzb Renesas LSIs M6MGD137W33TP 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY 33,554,432- BIT


    Original     		PDF M6MGD137W33TP 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD137W33TP 128M-bit 32M-bit

    2003 - M6MGD137W34DWG-P

    Abstract: mobile circuit diagram MCE Semiconductor
    Text: Renesas LSIs M6MGD137W34DWG-P 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package , .1.0_48a_bezc Renesas LSIs M6MGD137W34DWG-P 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554 , M6MGD137W34DWG-P 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY , (S-CSP) that contents 128M- bit Flash memory and 32M- bit performance cellular phone and a mobile PC that


    Original     		PDF M6MGD137W34DWG-P 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD137W34DWG-P 128M-bit mobile circuit diagram MCE Semiconductor

    2005 - mobile phone

    Abstract: M6MPV15BM34DDG
    Text: subject to change. M6MPV15BM34DDG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package , subject to change. M6MPV15BM34DDG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33 , . Some parametric limits are subject to change. M6MPV15BM34DDG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT , Renesas MCP(multi chip package) product that contents 128M- bit Synchronous Burst Flash memory and 32M- bit


    Original     		PDF M6MPV15BM34DDG 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MPV15BM34DDG 128M-bit mobile phone

    2003 - transistor marking A21

    Abstract: mobile circuit diagram M6MGD13TW66CWG-P
    Text: subject to change. M6MGD13TW66CWG-P 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGD13TW66CWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M- bit Flash memory , subject to change. M6MGD13TW66CWG-P 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67 , . M6MGD13TW66CWG-P 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY


    Original     		PDF M6MGD13TW66CWG-P 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MGD13TW66CWG-P 128M-bit 64M-bit transistor marking A21 mobile circuit diagram

    mobile phone

    Abstract: transistor marking A21 mobile circuit diagram M6MGD13TW66CWG
    Text: . Some parametric limits are subject to change. M6MGD13TW66CWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip , . M6MGD13TW66CWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY , 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT , suitable for a high performance (S-CSP) that contents 128M- bit Flash memory and 64M- bit cellular phone


    Original     		PDF M6MGD13TW66CWG 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MGD13TW66CWG 128M-bit mobile phone transistor marking A21 mobile circuit diagram

    2003 - transistor marking A21

    Abstract: M6MGD13VW34DWG mobile circuit diagram mobile phone
    Text: subject to change. M6MGD13VW34DWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package , parametric limits are subject to change. M6MGD13VW34DWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS , change. M6MGD13VW34DWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT , performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 128M- bit


    Original     		PDF M6MGD13VW34DWG 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD13VW34DWG 128M-bit transistor marking A21 mobile circuit diagram mobile phone

    2005 - M6MPV15BM66CDG

    Abstract: No abstract text available
    Text: . Some parametric limits are subject to change. M6MPV15BM66CDG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip , are subject to change. M6MPV15BM66CDG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY , . M6MPV15BM66CDG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY , . The M6MPV15BM66CDG is the Renesas MCP(multi chip package) product that contents 128M- bit Synchronous


    Original     		PDF M6MPV15BM66CDG 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MPV15BM66CDG 128M-bit

    2005 - M6MGD15VM66BWG

    Abstract: No abstract text available
    Text: subject to change. M6MGD15VM66BWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package , high-performance 134,217, 728-bit - Flash Page Read CMOS boot block Flash memory device, organized as - mobileRAM , final specification. Some parametric limits are subject to change. M6MGD15VM66BWG 134,217, 728-BIT , specification. Some parametric limits are subject to change. M6MGD15VM66BWG 134,217, 728-BIT (8,388,608-W O


    Original     		PDF M6MGD15VM66BWG 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MGD15VM66BWG 128M-bit 64M-bit

    2005 - M6MPV15BM66DDG

    Abstract: final
    Text: . Some parametric limits are subject to change. M6MPV15BM66DDG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip , change. M6MPV15BM66DDG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT , final specification. Some parametric limits are subject to change. M6MPV15BM66DDG 134,217, 728-BIT , . The M6MPV15BM66DDG is the Renesas MCP(multi chip package) product that contents 128M- bit Synchronous


    Original     		PDF M6MPV15BM66DDG 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MPV15BM66DDG 128M-bit final

    2005 - mobile circuit diagram

    Abstract: free mobile phone circuit diagram mobile phone circuit diagram M6MGD15BM66BDG
    Text: RENESAS LSIs M6MGD15BM66BDG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGD15BM66BDG is the Renesas MCP(multi chip package) product that contents 128M- bit , : Reserved for future use Rev.1.0.48a_bezb RENESAS LSIs M6MGD15BM66BDG 134,217, 728-BIT (8,388,608 , Rev.1.0.48a_bezb RENESAS LSIs M6MGD15BM66BDG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS


    Original     		PDF M6MGD15BM66BDG 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MGD15BM66BDG 128M-bit 64M-bit mobile circuit diagram free mobile phone circuit diagram mobile phone circuit diagram

    2003 - transistor marking A21

    Abstract: mobile phone circuit diagram A20 marking mobile circuit diagram M6MGD13TW34DWG-P
    Text: Renesas LSIs M6MGD13TW34DWG-P 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGD13TW34DWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M- bit Flash memory , : Don't Use Rev.1.0.48a_bezc Renesas LSIs M6MGD13TW34DWG-P 134,217, 728-BIT (8,388,608-WORD BY , Rev.1.0.48a_bezc Renesas LSIs M6MGD13TW34DWG-P 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS


    Original     		PDF M6MGD13TW34DWG-P 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD13TW34DWG-P 128M-bit 32M-bit transistor marking A21 mobile phone circuit diagram A20 marking mobile circuit diagram

    2003 - making a10

    Abstract: M6MGD137W34DKT 52-pin TSOP
    Text: parametric limits are subject to change. 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS mobileRAM Stacked- µMCP (micro Multi Chip Package , Notice: This is not a final specification. Some parametric limits are subject to change. 134,217, 728-BIT , M6MGD137W34DKT 134,217, 728-BIT (8,388,608-W O R D B Y 1 6-B I T ) C M O S F L A S H M E M O R Y & 33,554 , performance Package (S- µMCP) that contents 128M- bit Flash memory cellular phone and a mobile PC that are


    Original     		PDF M6MGD137W34DKT 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD137W34DKT 128M-bit making a10 52-pin TSOP

    2003 - a22 package marking

    Abstract: transistor marking A21 making a10 mobile circuit diagram mobile phone circuit diagram M6MGE13VW34DWG-P
    Text: subject to change. M6MGE13VW34DWG-P 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGE13VW34DWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M- bit Flash memory , . M6MGE13VW34DWG-P 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY , change. M6MGE13VW34DWG-P 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT


    Original     		PDF M6MGE13VW34DWG-P 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGE13VW34DWG-P 128M-bit 32M-bit a22 package marking transistor marking A21 making a10 mobile circuit diagram mobile phone circuit diagram

    2003 - transistor marking A21

    Abstract: mobile circuit diagram M6MGD13VW66CWG
    Text: subject to change. M6MGD13VW66CWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package , final specification. Some parametric limits are subject to change. M6MGD13VW66CWG 134,217, 728-BIT , parametric limits are subject to change. M6MGD13VW66CWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS , performance (S-CSP) that contents 128M- bit Flash memory and 64M- bit cellular phone and a mobile PC that are


    Original     		PDF M6MGD13VW66CWG 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MGD13VW66CWG 128M-bit transistor marking A21 mobile circuit diagram

    2003 - free mobile phone circuit diagram

    Abstract: mobile circuit diagram M6MGD137W34DWG MCE Semiconductor Mobile Phone Repeater repeater mobile circuit
    Text: Renesas LSIs RENESAS CONFIDENTIAL M6MGD137W34DWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip , M6MGD137W34DWG 134,217, 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152 , , 728-BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS , 128M- bit Flash memory and 32M- bit Mobile RAM in a 72-pin Stacked CSP for lead free use. 128M- bit


    Original     		PDF M6MGD137W34DWG 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD137W34DWG 128M-bit 32M-bit free mobile phone circuit diagram mobile circuit diagram MCE Semiconductor Mobile Phone Repeater repeater mobile circuit

    2001 - ba 663

    Abstract: D1112 120k dynamic RAM
    Text: . MH28S72PJG -5,-6,-7 9,663,676,416- BIT ( 134,217,728-WORD BY 72- BIT ) Synchronous DYNAMIC RAM DESCRIPTION The MH28S72PJG is 134,217,728 - word x 72- bit Sy nchronous DRAM stacked structural module. This , . MITSUBISHI LSIs Some contents are subject to change without notice. MH28S72PJG -5,-6,-7 9,663,676,416- BIT ( 134,217,728-WORD BY 72- BIT ) Synchronous DYNAMIC RAM PIN NO. PIN NAME PIN NO. PIN NAME , . MITSUBISHI LSIs Some contents are subject to change without notice. MH28S72PJG -5,-6,-7 9,663,676,416- BIT


    Original     		PDF MH28S72PJG 416-BIT 728-WORD 72-BIT 133MHz 100MHz 40pin ba 663 D1112 120k dynamic RAM
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