DIODE D 51 Search Results

Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

FMMD6050

Abstract: FMMD914 BAW* diode BAL99 BAR99 BAV70 BAV74 BAV99 ZC830A ZC831A
Contextual Info: SOT 23 TRANSISTORS & DIODES SELECTIO N GUIDE SILICO N P LA N A R HIGH SP EED SW ITCH IN G D IO D ES Rat ings Description Type B A S 16 FMMD914 HD3A BA L99 BA R99 FMMD6050 BAV70 BAV74 HD2A BAV99 BA W S6 HD4A Single diode Single diode Single diode Single diode

Contextual Info: m SANSHA ELECTRIC MFG CO 37E D DIODE MODULE • 7T=ilEM3 000D1D4 1 H S E M j l S a n R e x P ow e r Diode Module DD160F series are designed for various rectifier circuits. D D 160F has tw o diode chips connected in series in a package and the mounting base is

Contextual Info: D IO D E M O D U L E DD200HB Power Diode Module D D 200H B series are designed for various rectifier circuits. D D 200H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V

ad130

Abstract: D1103 d1105 MMAD1109 AD1107
Contextual Info: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching

BAV74

Abstract: DIN 3015
Contextual Info: BAV74 Silicon planar twin-diode The silicon planar tw in -d io d e BAV 74 in the minature plastic case 23 A 3 DIN 41869 S O T -23 is suitable fo r use as high-speed s w itch in g diode in film circuits. The diode is coded JA. The stated data apply fo r any diode system, unless otherw ise

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

LED pigtailed

Abstract: Diode PH 13M
Contextual Info: M itsubishi O ptical D e vice C la ssifica tio n Item LD modules Wave length •1.3jum/1.55j«m Laser diode •0.98um/1.48Mm for pump Laser diode •InGaAs-PIN Photo diode •InGaAs-APO Photo diode •active diameter ¿20/* m ~«4300^m Device Package •TO CAN, Chip-on-Carrier

dl520

Contextual Info: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 12N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7

smd dual diode code 68

Abstract: B10 zener diode DIODE ZENER smd marking 72 marking code br 37 SMD sot23 Zener diode smd marking code w1 kdn 010 Zener diode smd marking code .18 SOT23 ZENER DIODE 5.1V smd Zener diode smd marking code 91 marking code 153 DIODE sod 23
Contextual Info: AZ23C2V7-AZ23C51 300mW, Dual SMD Zener Diode Small Signal Diode SOT-23 A Features F B E —Wide zener voltage range selection : 2.7V to 51V —VZ Tolerance ≦ ±5% C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish —Pb free version and RoHS compliant

2N3904

Abstract: MO-001 TIL3009 TIL3010 TIL3011 TIL3012 E65085
Contextual Info: TIL3009, TIL3010, TIL3011, TIL3012 OPTOCOUPLERS/OPTOISOLATORS SOES027A – DECEMBER 1987 – REVISED APRIL 1998 D D D D D D 250-V Phototriac Driver Output Gallium-Arsenide-Diode Infrared Source and Optically-Coupled Silicon Triac Driver Bilateral Switch

5082-0012

Abstract: hydrofluoric acid
Contextual Info: PIN Diode Chips for Hybrid MIC Switches/Attenuators Technical Data 5082-0001 5082-0012 Features • Low Series Resistance 0.8 Ω Typical • Nitride Passivated Outline 01B 5082-0001 ALL OTHER CHIPS D D X X Description These PIN diode chips are silicon dioxide or nitride passivated. The

5082-0001

Abstract: 5082-3041 equivalent
Contextual Info: PIN Diode Chips for Hybrid MIC Switches/Attenuators Technical Data 5082-0001 5082-0012 Features • Low Series Resistance 0.8 Ω Typical • Nitride Passivated Outline 01B 5082-0001 ALL OTHER CHIPS D D X X Description These PIN diode chips are silicon dioxide or nitride passivated. The

D4457N

Abstract: 4336 326.4 D2228N D448N D5807N D758N 4807
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro

Contextual Info: MOC3009 THRU MOC3012 OPTOCOUPLERS/OPTOISOLATORS SOES024A – AUGUST 1985 – REVISED APRIL 1998 D D D D D D D 250 V Phototriac Driver Output Gallium-Arsenide-Diode Infrared Source and Optically Coupled Silicon Traic Driver Bilateral Switch UL Recognized . . . File Number E65085

BAV170LT1

Contextual Info: MOTOROLA Order this document by BAV170LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV170LT1 Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times

MMBD1005LT1

Abstract: MMBD2005T1 MMBD3005T1 SMD310
Contextual Info: MOTOROLA Order this document by MMBD1005LT1/D SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features:

marking JY sot-23

Abstract: BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor BAV199LT1 BAV199LT3
Contextual Info: MOTOROLA Order this document by BAV199LT1/D SEMICONDUCTOR TECHNICAL DATA BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times

MMBD1000

Abstract: MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 SMD310 marking 8b sod-123
Contextual Info: MOTOROLA Order this document by MMBD1000LT1/D SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features:

IN747

Abstract: in5253 zener diode in5247 zener diode THZ010A10 in750 diode IN5222 IN751 Scans-0011500 THZ051A10 in5228
Contextual Info: C D D fi fi II E urnHUUt SILICON ZENER DIODE CHIPS SILICO N ZEN ER DIODE C H IP S Available in 10% Standard , 5 % tolerance option. Silicon oxide passivated junctions. ANODE (ALUM INUM ) Full Voltage Range: 2.4 through 150 V, “A ” Series. 1.8 through 150 V, “B ” Series.

Contextual Info: M IT E L DSF20060SF -Fast Recovery Diode . . . , Advance Information SEM ICON D UCTOR S u p e rse d e s Septem ber 1996 version, D S4218 - 3.3 D S4218 - 3.4 M arch 1998 APPLICATIONS

MARKING YA SOT-23

Contextual Info: MOTOROLA Order this document by BAW156LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diode BAW156LT1 This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times M otorola Preferred Device

MGY40N60D

Abstract: motorola 6810
Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264