IN97 Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

OCX1601

Abstract: in107 OCX160 OCX256 IN118 rca 645 iN92 tms 1601
Contextual Info: OCX Register Programming Manual Revision 2.1 February 2003 Revision History Revision 1.0, March 2001—Preliminary Release. Revision 2.0, May 2002—Fairchild Semiconductor Preliminary Release. Revision 2.1, February 2003—Corrected references to OCX160.

N38 transistor

Abstract: w38 transistor AR33 crosspoint 256 x 256 ocx 256 E23 transistor AB-39
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports

Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

Scan AV6

Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

IN126P

Abstract: AA-38 AH36 AR24
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

1n9668

Abstract: 1N9750 1N9688 IC 4011 IC HE 4011 IN973b diode zener SD 33 4011 IC sd 150 zener diode HE 4011
Contextual Info: 1N957B thru 1N992B DO-7 Microsemi Corp. f The cmhfp e rp e 'îs SC O T T SD A L E , A Z For more inform ation call; 6 0 2 941-6300 F E A TU R E S SILICON 400 mW ZENER DIODES • 6.8 TO 200V Z E N E R V O LT A G E RAN GE • 1N962B THRU 1N992B H A V E JA N , JA N T X AND JA N T X V Q U A LIFIC A T IO N S

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

M83528/002D-017

Contextual Info: EMI CATALOG www.lairdtech.com ABOUT LAIRD Laird is a global technology business focused on enabling wireless communication and smart systems, and providing components and systems that protect electronics. Laird operates through two divisions, Wireless Systems and

IN4773

Abstract: IN2976 IN4773A IN536 1N29B IN4772 1H28 IN2822 IN2621 1N137
Contextual Info: TEX/ SEflIT R O N IC S CORP^ 27E I> • MAbTEm, 0DD0314 4 ■ semitron hot iine -r-n - 01 - T ' H - II TOLL FREE NUMBER 800-777-3960 discrete devices silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt m T 1N42# 1N1735 Norn.

IN96

Contextual Info: 128-Channel Digital X-Ray Analog Front End AD8488 Data Sheet FEATURES GENERAL DESCRIPTION 128 integrator channels Correlated double sample error correction CDS Corrects for VOS and LF noise Power consumption per channel Normal: 11 mW Low power: 4 mW Low input leakage current: −1.5 pA typical

IN117

Abstract: aa36 in60p diode CORE i3 ARCHITECTURE diode ak38 AA34 crosspoint 256 x 256 ocx 256 in60p in75 iN92
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports

IN970B

Abstract: IN967B N986 IN975B IN966b
Contextual Info: • 1 N962B-1 THRU 1N986B-1 AVAILABLE IN JAN, JANTX AND JANTXV • METALLURGICALLY BONDED -1 1N957 th ru 1N986B and 1 N962B-1 thru 1N986B-1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS O o e ra tin g T e m p e ra tu re : -65 C to + 1 7 5 ! C S o ra g e T e m p e ra tu re : -6 5 °C to + 1 7 5 ‘ C

IN117

Abstract: in60p OCX256 IN104 TBGA792 crosspoint 256 x 256 IN126P
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

IN126P

Abstract: IN125P IN117P IN118P IN68P diode ak38 IN121P diode ae38 AF39 OCX256
Contextual Info: Preliminary Revised March 2003 OCX256L • OCX256P Crosspoint Switch with LVDS Preliminary • Crosspoint Switch with LVPECL (Preliminary) • 256 configurable I/O ports General Description The OCX256 SRAM-based devices are non-blocking 128 X 128 digital crosspoint switches and are available in LVDS

1S1618

Abstract: IN987B do-7 diode iss IN987 IN9778 ic 957B SJ 76 A DIODE EMI
Contextual Info: niCROSEMI CORP 25E D bllSäbS QGOQTbfl fl 1N957B thru 1N992B DO-7 emi Corp. Th§'0KX/^9M0trtS SCOTTSDALE, AZ SANTA ANA, CA For more information calk 602 941-6300 FEATURES T - t h t f SILICON 400 mW ZENER DIODES • 6.8 TO 200V ZENER VOLTAGE RANGE • 1N962B THRU 1N992B HAVE JAN, JANTX AND JANTXV QUALIFICATIONS

in78

Abstract: IN118 IN116 IN109 IN117 in76 IN103 MS-034 AAF-1 in107 IN104
Contextual Info: 128-Channel Digital X-Ray Analog Front End AD8488 Data Sheet FEATURES GENERAL DESCRIPTION 128 integrator channels Correlated double sample error correction CDS Corrects for VOS and LF noise Power consumption per channel Normal: 11 mW Low power: 4 mW Low input leakage current: −1.5 pA typical

mosfet 4800

Abstract: schematic diagram inverter 12v to 24v 30a schematic diagram inverter 500w USING MOSFET 4606 MOSFET INVERTER ltsx e3 mosfet driver ic mt 1389 de aot 110 optocoupler 4558 opamp schematic ic 4440 40w amplifier 12v LTPG e3
Contextual Info: May 2008 Product Selection Guide Operational Amplifiers Data Converters Linear Regulators Switching Regulators µModule DC/DC Converters Battery Chargers Hot Swap Interface Filters High Frequency Silicon Oscillators Comparators µP Supervisor References High

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll

P3100EA70

Abstract: HOW TO DRIVE SSR USING MOSFET DRIVER in4148 zener diode 1N4148 2N3904 IN4148 LH1529 LH1549 EQUIVALENT OF ZENER DIODE IN4148 Appnote65
Contextual Info: LH1529/49 Telecom Switches Appnote 65 Introduction As a companion to this document, please refer to the respective telecom switch data sheets for more information. The LH1529 and LH1549 Telecom Switches consist of an optically isolated solid state relay SSR and autopolarity optocoupler in a single 8-pin package. The LH1529 and LH1549 differ

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

n37 transistor

Abstract: AH34 transistor crosspoint 256 x 256 ocx 256 w34 transistor AF39 IN125P U39-W39 AB-39 IN80P IN70N
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports

IN5844 diode

Abstract: IN5844 IN751 Diode "IN5844" IN4742 diode in5844 IN4744 IN4732 IN4748 IN4118
Contextual Info: jemitronicf discrete devices SEMICONDUCTORS S em itronics Corp. ZENER DIODE CROSS REFERENCE GUIDE BY VOLTAGE vz 500mW 4Q0mW 400mW 500mW 250mW 250/ 400mW IN4678 IN4679 IN4680 IN4614 IN4615 IN4616 IN5985 IN4681 IN4617 IN5966 IN4682 IN4683 IN4616 IN4619 500mW

P3100EA70

Abstract: P3100EA HOW TO DRIVE SSR USING MOSFET DRIVER 1N4148 2N3904 IN4148 LH1529 LH1549 optotransistor
Contextual Info: LH1529/49 Telecom Switches Appnote 65 Introduction Elevated ambient temperatures and electrical self-heating from high-load currents mandate a higher LED drive current. Figure 2 utilizes a worst-case parameter analysis and takes into account manufacturing tolerances in order to ensure SSR turn-on.