DAZ0 Search Results

ML1220T13RE

Abstract: IFL90 LS-3548P KB925 LA-3541P intel DG 31 crb LS-354CP ISL6251 PR207 FBMA-L11-201209-221LMA30T
Contextual Info: A B C D E ZZZ1 PCB 04/27 Add PCB Panel P/N for MTDAZ@ 04/27 Add PCB Panel P/N DAZ01S00100 07/09 Change PCB Panel P/N from DAZ01S00100 to DAZ01S00200 PJP1 PJP1 14W_DCIN 15W_DCIN 14W_45@ 15W_45@ MTDAZ@ ZZZ25 1 PCB FBDAZ@ 03/28 Change PCB Panel PN from DAZ01W00101 to DAZ01Q00101

0.1u_0603_25v7k

Abstract: GL831 Sil1392 LA-4761P RTL8102EL FBMA-L11-160808-800LMT SST25LF080A_SO8-200mil tx2 0918 KB926 SP02000GC00
Contextual Info: A ZZZ1 1 B C D E LA-4761P PCB 1 DAZ06H00100 Compal Confidential KIU10-Tiger M/B Schematics Document 2 2 2009-01-13 REV:1.0 3 3 4 4 Security Classification Classification Issued Date Compal Secret Data Title Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

APW7141

Abstract: KAV60 LA-5141P KAV60 LS-5143P kb926 jlvds1 kav60 LA 5141P KB926D ISL6251 sis412 apl5607ki
Contextual Info: A B C D E ZZZ DAZ@ DAZ08400100 1 1 KAV60 LA-5141P LS-5141P/5142P/5143P ZZZ DA2@ DA60000BO10 LA-5141P REV1 M/B ZZZ DA2@ DA20000FM10 LS-5141P REV1 PWR/B Compal Confidential ZZZ DA2@ DA60000BU10 2 2 LS-5142P REV1 SDIO/B ZZZ DA2@ DA60000BT10 KAV60 Schematics Document

kav60 la-5141p

Abstract: APW7141 KAV60 APL3510B LS-5143P LA-5141P jlvds1 kav60 LA 5141P KB926D APL5607KI-TRG APL5607
Contextual Info: A B C D E ZZZ DAZ@ DAZ08400100 1 1 KAV60 LA-5141P LS-5141P/5142P/5143P ZZZ DA2@ DA60000BO10 LA-5141P REV1 M/B ZZZ DA2@ DA20000FM10 LS-5141P REV1 PWR/B Compal Confidential ZZZ DA2@ DA60000BU10 2 2 LS-5142P REV1 SDIO/B ZZZ DA2@ DA60000BT10 KAV60 Schematics Document

SLG8SP553V

Abstract: KB926 KB926Qf LA-4271P isl6262acrz RTL8111c sch rt9173d G993P1UF dmit DAN202UT106_SC70-3
Contextual Info: A B C D E ZZZ8 DAZ@ DAZ04300100 PCB 1 1 ZZZ1 DA2@ MAIN BOARD DA600007E10 PCB ZZZ2 DA2@ E board DA40000A910 PCB ZZZ3 DA2@ FP board Compal Confidential DA600007D10 PCB ZZZ4 2 DA2@ Function board DA40000AA10 PCB ZZZ5 DA2@ USB board DA40000AB10 JAT10 M/B Schematics Document

D51A12

Abstract: G990P11U KB926 alc889 ENE-SB3520 ALC889X dell confidential 2009 SS801u ich9 compal
Contextual Info: A B C D E ZZZ8 DAZ@ DAZ04300100 PCB 1 1 ZZZ1 DA2@ MAIN BOARD DA600007E10 PCB ZZZ2 DA2@ E board DA40000A910 PCB ZZZ3 DA2@ FP board Compal Confidential DA600007D10 PCB ZZZ4 2 DA2@ Function board DA40000AA10 PCB ZZZ5 DA2@ USB board DA40000AB10 KAQB0 M/B Schematics Document

NT5SV8M16FS

Abstract: Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K
Contextual Info: NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb Synchronous DRAM • • • • • • • • • • • • Features • High Performance: Maximum Operating Speed CAS Latency PC166 6KI PC133 (75BI) 2 7.5 10 ns 3 6 7.5 ns •

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page

EM63A165TS-5G

Abstract: EM63A165TS-6G EM63A165TS-7G EM63A165TS cke 2009 EM63A165
Contextual Info: EtronTech EM63A165TS 16M x 16 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • • Fast access time from clock: 4.5/5.4/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation Internal pipelined architecture

NT56V6610C0T-8A

Abstract: nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A
Contextual Info: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 June, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

Q 2 72 t5

Abstract: Q 72 t5 T436432B T436432B-55SG T436432B-5S T436432B-5SG
Contextual Info: tm TE CH T436432B SDRAM 512K x 32bit x 4Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION 2M x 32 SDRAM • • • • • 3.3V power supply Clock cycle time : 5 / 5.5 / 6 / 7 / 8 / 10 ns Internal four banks operation LVTTL compatible with multiplexed address

T431616D-5S

Abstract: T431616E
Contextual Info: tm TE CH T431616D/E SDRAM 512K x 16bit x 2Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank

T4312816B

Contextual Info: tm TE CH T4312816B SDRAM 2M x 16bit x 4Banks Synchronous DRAM 8M x 16 SDRAM FEATURES GRNERAL DESCRIPTION • The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a

BL460

Abstract: 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT
Contextual Info: NT5SV64M4AT L NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns —

IS42S32160C

Abstract: 42S32160C is42s32160 IS42S32160C-75BLI
Contextual Info: IS42S32160C 16Mx32 512Mb SYNCHRONOUS DRAM DESCRIPTION: FEATURES: • • • • • • • • Clock frequency: 166, 133 MHz Fully synchronous operation Internal pipelined architecture Programmable Mode – CAS# Latency: 2 or 3 – Burst Length: 1, 2, 4, 8, or full page

EM638165TS

Abstract: COMMAND EM638165
Contextual Info: EtronTech EM638165 4Mega x 16 Synchronous DRAM SDRAM (Rev 1.9, 04/2007) Features • • • • • • • • • • • • • Key Specifications Fast access time from clock: 4.5/5/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation

sdram 1m x 4x 32

Abstract: EM636165 EM636165TS
Contextual Info: EtronTech EM636165 Industrial 1Mega x 16 Synchronous DRAM SDRAM (Rev.3.1, Jul/2007) Features Fast access time: 5/5.5 ns Fast clock rate: 166/143 MHz Self refresh mode: standard and low power Internal pipelined architecture 512K word x 16-bit x 2-bank Programmable Mode registers

Contextual Info: EtronTech Industrial EM638325 2M x 32 Synchronous DRAM SDRAM Rev 1.0 Mar/2006 Pin Assignment (Top View) Features Clock rate: 200/183/166/143 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank) Programmable Mode

e24526

Abstract: IBM0316169C IBM0316809C
Contextual Info: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM13Q4739CC 4M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8- Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM

E24526

Abstract: IBM0316169C IBM0316809C
Contextual Info: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM13Q8739CC 8M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8-Byte Dual In-Line Memory Module • 8M x 72 Synchronous DRAM DIMM

EM63A165TS-6G

Abstract: EM63A165TS cke 2009 EM63A165TS-7G A80-1 EM63A165 A0912
Contextual Info: EtronTech EM63A165TS 16M x 16 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • • Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation Internal pipelined architecture

Contextual Info: IS42S32160A1 4M Words x 32 Bits x 4 Banks 512-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (4M x 32bit x 4bank) · Programmable Mode

Contextual Info: IS42S32800D 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM PRELIMINARY INFORMATION OCTOBER 2007 FEATURES DESCRIPTION • Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit x 4bank)