D35 TRANSISTOR Search Results
D35 TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
D35 TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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3SK2411
Abstract: 2SC1215 3SK143 3SK22 3sk169 3SK247
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2SC1215 3SK268 2SC3354 2SC4716 2SC3354 2SC2636 3SK2411 2SC1215 3SK143 3SK22 3sk169 3SK247 | |
c828, transistor de audio
Abstract: quanta Q5627 OZ711EC1B quanta computer quanta BL 8 x 24 DOT MATRIX DISPLAY project c528 transistor MD2810 BT319
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PAGE05 PAGE06 PAGE18 PAGE26 PAGE33 PAGE36 PAGE03 PAGE07 PAGE08 c828, transistor de audio quanta Q5627 OZ711EC1B quanta computer quanta BL 8 x 24 DOT MATRIX DISPLAY project c528 transistor MD2810 BT319 | |
2SB873
Abstract: 2SA879 D2483 2SC1360 2sc5018 2SD2360
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O-92NL O-92L 2SB1537 2SB1538 2SD2358 2SB1539 V2SD2359 2SB1614 2SC1518 2SB1540 2SB873 2SA879 D2483 2SC1360 2sc5018 2SD2360 | |
UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
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UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211 | |
C1360A
Abstract: 2SC4971 2SB873 2SB1615 SC1360
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2SB1537 2SD2357 2SB1538 12SD2358 A2SB1611 2SD1679 2SB789/A 2SD968/A 2SB1297 2SD1937 C1360A 2SC4971 2SB873 2SB1615 SC1360 | |
2sk to-92Contextual Info: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80 |
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2SK601 2SK614 2SK615 2SK620 A2SK2276 A2SK2342 2sk to-92 | |
2sc4973
Abstract: 2SC5020 2SC2671
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2SA1806 2SC4691 2SC4755 2SA1739 2SC3938 2SA1738 2SC3757 2SC4782 2SC4969 2SC3811 2sc4973 2SC5020 2SC2671 | |
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44324185B-A, 44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor |
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PD44324185B-A, 44324365B-A 36M-BIT PD44324185B-A 152-word 18-bit PD44324365B-A 576-word 36-bit | |
PD44324185BF5-E35-FQ1Contextual Info: Datasheet PD44324185B-A μPD44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0037EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor |
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PD44324185B-A PD44324365B-A 36M-BIT R10DS0037EJ0100 PD44324185B-A 152-word 18-bit PD44324365B-A 576-word 36-bit PD44324185BF5-E35-FQ1 | |
Contextual Info: jtà c C M W an A M P com pany Radar Pulsed Power Transistor, 50W, 100ns Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M V2.00 Features 8b • NPN S ilic o n P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la s s C O p e r a tio n |
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100ns PH2226-50M | |
2SD2529
Abstract: 2SB1627 2SC3312 2SD1010 2SD1993 2SD1995 2SB642 2SB1600 2sd661 2SB1601
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2SB642 2SA1619/A 2SB1322A 2SB1462 12SD2216 2SB1218A 12SD1819A 2SB1219/A 2SA921 2SD2258 2SD2529 2SB1627 2SC3312 2SD1010 2SD1993 2SD1995 2SB642 2SB1600 2sd661 2SB1601 | |
2SB1446
Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
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2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632 | |
Contextual Info: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor |
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R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit R10DS0141EJ0100 R1Q3A4436RBG 304-word 36-bit R1Q3A4418RBG 608-word 18-bit | |
Contextual Info: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor |
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R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit R10DS0140EJ0100 R1Q2A4436RBG 304-word 36-bit R1Q2A4418RBG 608-word 18-bit | |
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Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! |
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900MHz Q62702-F1298 OT-23 D155144 flE35fc D12514S | |
50S20
Abstract: BH6455GUL
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BH6455GUL BH6455GUL R1120A 50S20 | |
L2735
Abstract: D-34A i-box
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LH543611/21 LH5420 LH543601, 512x36x2/1024x36x2 LH543611 LH543621 L2735 D-34A i-box | |
marking code 1pContextual Info: 72QM2 R1Q3A7236ABG / R1Q3A7218ABG Series R1Q3A7236ABG R1Q3A7218ABG 72-Mbit QDR II SRAM 4-word Burst R10DS0176EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory |
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72QM2 R1Q3A7236ABG R1Q3A7218ABG R1Q3A7218ABG 72-Mbit R1Q3A7236 152-word 36-bit R1Q3A7218 marking code 1p | |
Contextual Info: 72QM2 R1Q3A7236ABB / R1Q3A7218ABB Series R1Q3A7236ABB R1Q3A7218ABB 72-Mbit QDR II SRAM 4-word Burst R10DS0165EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory |
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72QM2 R1Q3A7236ABB R1Q3A7218ABB R1Q3A7218ABB 72-Mbit R1Q3A7236 152-word 36-bit R1Q3A7218 | |
transistor EFT 352
Abstract: d35 transistor farnell thermocouples mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 MFA350 transistor c63
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MFA350 DFA350) EN61000-3-2 VAC/50 30-Oct-08 MFA350 transistor EFT 352 d35 transistor farnell thermocouples mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 transistor c63 | |
T6,3 H 250 V Fuse
Abstract: mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 MFA350 R0225
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MFA350 DFA350) EN61000-3-2 VAC/50 23-Oct-08 MFA350 T6,3 H 250 V Fuse mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 R0225 | |
transistor 123 DL
Abstract: TRANSISTOR 8FB a406 transistor A7N transistor
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AOL1444 AOL1444 DDD50% transistor 123 DL TRANSISTOR 8FB a406 transistor A7N transistor | |
Contextual Info: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low |
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SM6F151* SM6F251* SM6F351* SM6F451* T0254AA T0258AA FT0258AA HDS100 | |
R0225Contextual Info: AC-DC 350/420 Watts MFA Series xppower.com • U-Channel, Cover Fan & Hotswap Formats • Power Density up to 12.8 W/in3 • Power Fail, DC OK & Active Current Share • 5 V Standby Outputs • 12 V Fan Supply Outputs • Screw Terminals Available • 3 Year Warranty |
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VAC/50 VAC/60 05-Oct-11 MFA350/420 R0225 |