D35 TRANSISTOR Search Results
D35 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
D35 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
3SK2411
Abstract: 2SC1215 3SK143 3SK22 3sk169 3SK247
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2sc12153sk2682sc33542sc4716+6 | |
c828, transistor de audio
Abstract: quanta Q5627 OZ711EC1B quanta computer quanta BL 8 x 24 DOT MATRIX DISPLAY project c528 transistor MD2810 BT319
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page05page06page18page26+15 | |
2SB873
Abstract: 2SA879 D2483 2SC1360 2sc5018 2SD2360
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o-92nlo-92l2sb15372sb1538+12 | |
UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
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un1000600mwun2000200mw+13 | |
C1360A
Abstract: 2SC4971 2SB873 2SB1615 SC1360
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2sb15372sd23572sb153812sd2358+11 | |
2sk to-92Contextual Info: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80 |
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2sk6012sk6142sk6152sk620+3 | |
2sc4973
Abstract: 2SC5020 2SC2671
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2sa18062sc46912sc47552sa1739+9 | |
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Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44324185B-A, 44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor |
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pd44324185b-a44324365b-a36m-bit152-word+4 | |
PD44324185BF5-E35-FQ1Contextual Info: Datasheet PD44324185B-A μPD44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0037EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor |
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pd44324185b-apd44324365b-a36m-bitr10ds0037ej0100+5 | |
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Contextual Info: jtà c C M W an A M P com pany Radar Pulsed Power Transistor, 50W, 100ns Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M V2.00 Features 8b • NPN S ilic o n P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la s s C O p e r a tio n |
OCR Scan |
100nsph2226-50m | |
2SD2529
Abstract: 2SB1627 2SC3312 2SD1010 2SD1993 2SD1995 2SB642 2SB1600 2sd661 2SB1601
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2sb6422sa1619/a2sb1322a2sb1462+15 | |
2SB1446
Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
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2sb14622sb1218a2sd1819a2sb1219/a+16 | |
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Contextual Info: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor |
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r1q3a4436rbgr1q3a4418rbg144-mbitr10ds0141ej0100+4 | |
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Contextual Info: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor |
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r1q2a4436rbgr1q2a4418rbg144-mbitr10ds0140ej0100+4 | |
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Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! |
OCR Scan |
900mhzq62702-f1298ot-23d155144+2 | |
50S20
Abstract: BH6455GUL
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bh6455gulr1120a50s20 | |
L2735
Abstract: D-34A i-box
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lh543611/21lh5420lh543601512x36x2/1024x36x2+5 | |
marking code 1pContextual Info: 72QM2 R1Q3A7236ABG / R1Q3A7218ABG Series R1Q3A7236ABG R1Q3A7218ABG 72-Mbit QDR II SRAM 4-word Burst R10DS0176EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory |
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72qm2r1q3a7236abgr1q3a7218abg72-mbit+5 | |
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Contextual Info: 72QM2 R1Q3A7236ABB / R1Q3A7218ABB Series R1Q3A7236ABB R1Q3A7218ABB 72-Mbit QDR II SRAM 4-word Burst R10DS0165EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory |
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72qm2r1q3a7236abbr1q3a7218abb72-mbit+4 | |
transistor EFT 352
Abstract: d35 transistor farnell thermocouples mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 MFA350 transistor c63
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mfa350dfa350en61000-3-2vac/50+9 | |
T6,3 H 250 V Fuse
Abstract: mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 MFA350 R0225
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mfa350dfa350en61000-3-2vac/50+7 | |
transistor 123 DL
Abstract: TRANSISTOR 8FB a406 transistor A7N transistor
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aol1444ddd50transistor 123 dltransistor 8fb+2 | |
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Contextual Info: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low |
OCR Scan |
sm6f151sm6f251sm6f351sm6f451+4 | |
R0225Contextual Info: AC-DC 350/420 Watts MFA Series xppower.com • U-Channel, Cover Fan & Hotswap Formats • Power Density up to 12.8 W/in3 • Power Fail, DC OK & Active Current Share • 5 V Standby Outputs • 12 V Fan Supply Outputs • Screw Terminals Available • 3 Year Warranty |
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vac/50vac/6005-oct-11mfa350/420+1 | |