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    D35 TRANSISTOR Search Results

    D35 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    D35 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3SK2411

    Abstract: 2SC1215 3SK143 3SK22 3sk169 3SK247
    Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Appli­ Band cation TO-92 (D46) New S Type (D34) M Type (D35) 2SC1215 Package (No.) SS Mini Type S Mini Type S Mini Type (3 pin) (4 pin)


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    2sc12153sk2682sc33542sc4716+62sc26363sk24113sk1433sk223sk1693sk247 PDF

    c828, transistor de audio

    Abstract: quanta Q5627 OZ711EC1B quanta computer quanta BL 8 x 24 DOT MATRIX DISPLAY project c528 transistor MD2810 BT319
    Contextual Info: 5 MODEL: 2 1 1A FIRST RELEASE 1B MODIFY PAGE05 PAGE06 PAGE18 PAGE26 PAGE33 PAGE36 BOM : ECN NO. E200303-0277 : R495 CHANGE TO 127 ohm 1% : C604 & C654 CHANGE TO 220uF / 2.5V : D4 CHANGE TO CH715F : D35 DON'T STUFF : PU6 CHANGE TO MAX1907AETL , PQ15 & PQ23 CHANGE TO FDB7045L , PC46 CHANGE TO 220pF


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    page05page06page18page26+15page33page36page03page07page08c828, transistor de audioquantaq5627oz711ec1bquanta computerquanta bl8 x 24 dot matrix display projectc528 transistormd2810bt319 PDF

    2SB873

    Abstract: 2SA879 D2483 2SC1360 2sc5018 2SD2360
    Contextual Info: Package No. Application Functions fx (MHz) VcEO S-Mini Type <D5) Mini Type (D12) New S Type (D34) TO-92 (D46) M Type (D35) TO-92NL (D48) TO-92L (D47) Mini-Power Type MT1 Type (D37) MT2 Type (D38) (mA) »250 10 1A * < 0.15 *500 20 500 * <0.2 »250 20 500 * <0.2


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    o-92nlo-92l2sb15372sb1538+122sd23582sb1539v2sd23592sb16142sc15182sb15402sb8732sa879d24832sc13602sc50182sd2360 PDF

    UN7000

    Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
    Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )


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    un1000600mwun2000200mw+13n2111un2112un2113un2114un2115un2116un7000un8000un9110unr921cjun1219un4115un1211 PDF

    C1360A

    Abstract: 2SC4971 2SB873 2SB1615 SC1360
    Contextual Info: P a c k a g e No. Applica­ tion S M ini T y p e Functions S S Mini Type (D1) M ini T y p e T M in i T y p e (D 1 2) (D22) (D5) New S Type (D34) VcEO T O -9 2 M Type T O -9 2 N L T O -9 2 L (D46) (D35) (D48) (D47) Mini Power Type (D19) MT1 T y p e M T 2 Type


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    2sb15372sd23572sb153812sd2358+11a2sb16112sd16792sb789/a2sd968/a2sb12972sd1937c1360a2sc49712sb8732sb1615sc1360 PDF

    2sk to-92

    Contextual Info: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80


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    2sk6012sk6142sk6152sk620+3a2sk2276a2sk23422sk to-92 PDF

    2sc4973

    Abstract: 2SC5020 2SC2671
    Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch • V C O and High Frequency Type Application Functions High speed switch Package (No.) SS Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938 2SC3757 2SC4755


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    2sa18062sc46912sc47552sa1739+92sc39382sa17382sc37572sc47822sc49692sc38112sc49732sc50202sc2671 PDF

    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44324185B-A, 44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


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    pd44324185b-a44324365b-a36m-bit152-word+418-bitpd44324365b-a576-word36-bit PDF

    PD44324185BF5-E35-FQ1

    Contextual Info: Datasheet PD44324185B-A μPD44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0037EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


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    pd44324185b-apd44324365b-a36m-bitr10ds0037ej0100+5152-word18-bit576-word36-bitpd44324185bf5-e35-fq1 PDF

    Contextual Info: jtà c C M W an A M P com pany Radar Pulsed Power Transistor, 50W, 100ns Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M V2.00 Features 8b • NPN S ilic o n P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la s s C O p e r a tio n


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    100nsph2226-50m PDF

    2SD2529

    Abstract: 2SB1627 2SC3312 2SD1010 2SD1993 2SD1995 2SB642 2SB1600 2sd661 2SB1601
    Contextual Info: ; •Silicon Small Signal Transistors / ! ; # General-use Low Frequency Amplifiers and Others I 2SB1462 12SD2216 1 2SA1791 General­ is e low freq. ampli­ fier 12SC4656 f 2SB1218A 12SD1819A 2SB1219/A I 2SD1820/A i 2SB709A I 2SD601A 1 2SB710/A I 2SD602/A


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    2sb6422sa1619/a2sb1322a2sb1462+1512sd22162sb1218a12sd1819a2sb1219/a2sa9212sd22582sd25292sb16272sc33122sd10102sd19932sd19952sb16002sd6612sb1601 PDF

    2SB1446

    Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
    Contextual Info: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A


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    2sb14622sb1218a2sd1819a2sb1219/a+162sd1820/a2sb709a2sd601a2sb710/a2sd602/a2sa1309a2sb14462sd24582sc53352sd10102sd19932sd19952sb6422sd1192sd24562sc2632 PDF

    Contextual Info: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


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    r1q3a4436rbgr1q3a4418rbg144-mbitr10ds0141ej0100+4304-word36-bit608-word18-bit PDF

    Contextual Info: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


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    r1q2a4436rbgr1q2a4418rbg144-mbitr10ds0140ej0100+4304-word36-bit608-word18-bit PDF

    Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900mhzq62702-f1298ot-23d155144+2fle35fcd12514s PDF

    50S20

    Abstract: BH6455GUL
    Contextual Info: System Lens Driver Series for Mobile Phone Cameras 2 wire serial interface Lens Driver for Voice Coil Motor I2C BUS compatible No.12015EAT04 BH6455GUL ●General Description The BH6455GUL motor driver provide 1 Constant -Current Driver 0.25ch bridge. This lens driver is offered in an ultra-small functional lens


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    bh6455gulr1120a50s20 PDF

    L2735

    Abstract: D-34A i-box
    Contextual Info: LH543611/21 512x36x2/1024x36x2 Synchronous Bidirectional FIFO FEATURES FUNCTIONAL DESCRIPTION • The LH543611 and LH543621 contain two FIFO buff­ ers, FIFO #1 and FIFO #2. These operate in parallel, but in opposite directions, for bidirectional data buffering.


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    lh543611/21lh5420lh543601512x36x2/1024x36x2+5lh543611lh543621l2735d-34ai-box PDF

    marking code 1p

    Contextual Info: 72QM2 R1Q3A7236ABG / R1Q3A7218ABG Series R1Q3A7236ABG R1Q3A7218ABG 72-Mbit QDR II SRAM 4-word Burst R10DS0176EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory


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    72qm2r1q3a7236abgr1q3a7218abg72-mbit+5r1q3a7236152-word36-bitr1q3a7218marking code 1p PDF

    Contextual Info: 72QM2 R1Q3A7236ABB / R1Q3A7218ABB Series R1Q3A7236ABB R1Q3A7218ABB 72-Mbit QDR II SRAM 4-word Burst R10DS0165EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory


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    72qm2r1q3a7236abbr1q3a7218abb72-mbit+4r1q3a7236152-word36-bitr1q3a7218 PDF

    transistor EFT 352

    Abstract: d35 transistor farnell thermocouples mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 MFA350 transistor c63
    Contextual Info: AC-DC 350 Watts xppower.com MFA350 Series • Screw Terminals Available • U-Channel, Cover Fan & Hotswap Formats • High Power Density up to 11.1 W/in3 • -10 °C to +70 °C Operation • Power Fail, DC OK & Active Current Share • 5 V Standby & 12 V Fan Supply Outputs


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    mfa350dfa350en61000-3-2vac/50+930-oct-08transistor eft 352d35 transistorfarnell thermocouplesmkdsen61000-3-3en61000-4-3en61000-4-4transistor c63 PDF

    T6,3 H 250 V Fuse

    Abstract: mkds DFA350 EN61000-3-3 EN61000-4-3 EN61000-4-4 MFA350 R0225
    Contextual Info: AC-DC 350 Watts xppower.com MFA350 Series • U-Channel, Cover Fan & Hotswap Formats • High Power Density up to 11.1 W/in3 • Screw Terminals Available • -10 °C to +70 °C Operation • Power Fail, DC OK & Active Current Share • 5 V Standby & 12 V Fan Supply Outputs


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    mfa350dfa350en61000-3-2vac/50+723-oct-08t6,3 h 250 v fusemkdsen61000-3-3en61000-4-3en61000-4-4r0225 PDF

    transistor 123 DL

    Abstract: TRANSISTOR 8FB a406 transistor A7N transistor
    Contextual Info: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power


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    aol1444ddd50transistor 123 dltransistor 8fb+2a406 transistora7n transistor PDF

    Contextual Info: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low


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    sm6f151sm6f251sm6f351sm6f451+4t0254aat0258aaft0258aahds100 PDF

    R0225

    Contextual Info: AC-DC 350/420 Watts MFA Series xppower.com • U-Channel, Cover Fan & Hotswap Formats • Power Density up to 12.8 W/in3 • Power Fail, DC OK & Active Current Share • 5 V Standby Outputs • 12 V Fan Supply Outputs • Screw Terminals Available • 3 Year Warranty


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    vac/50vac/6005-oct-11mfa350/420+1r0225 PDF