FLE35FC Search Results
FLE35FC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SIEM ENS 16Mx 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version) |
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3164400j/t3165400j/t3164400j/t-503164400j/t-60+6 | |
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Contextual Info: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and |
OCR Scan |
p-dso-28-1 | |
siemens sab 82538
Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
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crc-32fl23sb05siemens sab 825383tb siemens+8 | |
SIEMENS BST
Abstract: SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
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16-bit3116160bsj/bst3118160bsj/bst3118160bsj/bst-50+14 | |
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Contextual Info: BUZ 173 Infineon technologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds to flDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 £2 TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current |
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o-220c67078-s1452-a2s35bg5q133777+1 | |
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Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! |
OCR Scan |
900mhzq62702-f1298ot-23d155144+2 | |
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Contextual Info: SIEMENS C166-Family of High-Performance CMOS 16-Bit Microcontrollers C163-L Data Sheet C163-L • • • • • • • • • • • • • • 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline - 80 ns Instruction Cycle Time at 25 MHz CPU Clock |
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c166-family16-bitc163-l16-priority-level+2 | |
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Contextual Info: BSO 307N I nf ine on technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage Vqs • Enhancement mode Drain-Source on-state resistance ffos on • Avalanche rated Continuous drain current b • Dual N channel |
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sisooo56q67000-s40120235bg5q133777+5 | |
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Contextual Info: SIEMENS BAT 14-099 Silicon Dual Schottky Diode • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-099 |
OCR Scan |
q62702-a3461ot-143ehd0709501bq33e | |
smd transistor cy 813
Abstract: TCA505A inductive proximity detector ic TCA505 B TCA505G gg3s
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fl235b05003s3fl5q67000-a8278fl23sbd5+8 | |
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Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability |
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q62702-f1590ot-3432200bis21i2+3 | |
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Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For A F input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated N P N /PN P Transistors in one package Tape loading orientation |
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847pnq62702-c2374ot-363fle35fc+2 | |
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Contextual Info: Infineon technologies FP 420 L 90 B Double Differential Magneto Resistor Version 2.0 Incl. lacquer-cover 1.6 pin connection Approx. weight 0.2 g D im ensions in mm Features Typical Applications Double differential magneto resistor on one carrier Accurate intercenter spacing |
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a235bd5fle35fc013437b | |
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Contextual Info: SIEMENS SP 061OT SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = 0.-2.0V Type ^DS #D f lDS(on) Package Marking SP 061 OT -60 V -0.13 A io n SOT-23 sSF Type SP 061 OT Ordering Code Q67000-S088 Tape and Reel Information |
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061otot-23q67000-s088e6327+2 | |
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siemens 4261Contextual Info: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4261 Bipolar IC Features • • • • • • • • • • • • • Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity Input voltage up to 42 V |
OCR Scan |
q67000-a9003p-t0220-7-1q67000-a9109p-t0220-7-2+5 | |
MARKING L31 SMDContextual Info: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package |
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4-02wq62702-a1215scd-80fle35fc+4 | |
TLE4215
Abstract: transistor k 4215 IEP00718
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23stigsp-dip-16q67000-a8184235b05+7 | |
Siemens xl 532
Abstract: KCB02 SAB 529 83C166W-5M Siemens mt4 siemens multi channel timer 80C166W-MT3 Compare CISC and RISC gpr 163 80C166
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c16x-family80c166w/83c166w16-bit80c166w+12 | |
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Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 311 7800BSJ L -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC CAS access time |
OCR Scan |
7800bsj | |
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Contextual Info: SIEMENS PNP Silicon High-Voltage Transistors BFN 37 BFN 39 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 36, BFN 38 NPN Type |
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q62702-f1304q62702-f1305ot-223ehp0064i+2 | |