A235BD5 Search Results

uaa170

Contextual Info: 47E D • SIEM ENS A235bD5 SIEMENS 0034457 =5 « S I E Ù AKTIENGESELLSCHAF •F S S -\3 -O l LED Driver for Light Spot Displays UAA 170 Bipolar IC IC fo r drivin g 16 lig h t em ittin g diodes. D e pending on th e input vo lta g e, th e individual LED s are d riven w ithin one row in fo rm of a lig h t spot. T he U A A 170 pro vid e s a linear relation

Contextual Info: SIEMENS AKTIENGE SEL LSCHAF 4?E D A235bD5 DOHVflT? 2 I S I Ef i T -m -k '7 LHi 1158 LHi 1158 Pyroelectric-Twin-Detector The twin detector is the sensor component designed for alarm devices with increased requirements as to reliability and safety against false alarm. Located in a standard TO -5 hou­

SIEMENS BST

Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
Contextual Info: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature

Q67100-H5092

Abstract: SDA 2516-5
Contextual Info: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • • • • • • • • • • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V

Contextual Info: SIEM ENS BF 554 NPN Silicon RF Transistor • For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel BF 554 CC Q62702-F1042 Pin Co nfigural ion 1 2 3 B E Package1) C SOT-23

cn/A/U 237 BG

Contextual Info: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Fast 32-bit division, 16-bit 2 multiplication,

l30 diode smd

Abstract: JJ SMD diode smd diode E1
Contextual Info: SIEMENS STH61008G/N/Z 1300 nm DFB Laser in Coaxial Package with SM-Pigtail, with Optical Isolator for 2.5 Gbit/s Application Dimensions in inches mm .676(17.2) .597(15.2) max 0 .236 (6.0) Pinning MD CD LD 1.77 max. (45.0) Fiber Optics Components Laser Diodes

siemens sab 82538

Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Contextual Info: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)

Contextual Info: SIEMENS S/T Bus Interface Circuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width

Contextual Info: SIEMENS PNP Silicon AF Transistors BCP 51 . BCP 53 • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54 . BCP 56 NPN Type BCP BCP BCP BCP BCP BCP BCP BCP BCP 51 51-10

Contextual Info: FS: 04/93 Page 1 SIEMENS AG IC-SPECIFICATION TDA 4362 X Differences to the last edition Last Edition: D O K -N r. V 6 6 0 4 7 -S 1 6 0 3 -B 2 0 0 -V 1 Page 11: #P1 :.Values changed #P3: Values changed #P7: Values changed #P8: Values changed #P11: Values changed

Contextual Info: SIEMENS Intelligent 221-Bit EEPROM Counter for > 20000 Units with Security Logic and High Security Authentication SLE 4436 Features • 221 bit EEPROM and 16 bit maskprogrammable ROM 104 bit user memory fully compatible with SLE 4406 - 64 bit Identification Area

Contextual Info: SIEMENS 868352-Bit Dynamic Sequential Access Memory for Television Applications TV-SAM SDA 9251-2X Prelim inary Data CM OS IC Features • 2 1 2 x 6 4 x 1 6 x 4-bit organization • Triple port architecture • O ne 16 x 4-bit input shift register • T w o 16 x 4-bit output shift registers

71001 EB

Abstract: siemens ecu Q67120-C771 CMO 765 RC fet marking code P2 SAB-80C517A-N18-T3 SIEMENS 80515 siemens ecu ems bsy 28-90 Changing from the 80C537
Contextual Info: Device Specification SIEM EN S High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517A/83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C517A/83C517A-5,

2,5GHz oscillator

Abstract: 3A-34 8GHz oscillator
Contextual Info: SIEM EN S LNA/Mixer PMB 2332 Bipolar IC Target Spezification Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Frequency range up to 3.0GHz • Small outline T-SSOP 16 package • 2.7-4.5V voltage supply • -40°C to +85°C operational temperature range

Contextual Info: SIEMENS 8M x 32-Bit EDO-DRAM Module Small Outline Memory Module HYM 32V8045GD L -50/-60 Advanced Information • 72-Pin Small Outline Dual-in-Line Memory Module • 2 bank 8M x 32-bit organization • Hyper Page Mode (EDO) Operation • Performance: -50 -60

T60403-L4021

Abstract: function of lts 543 ic OB35 ltp250 T1605 vogt 543 VOGT B1 65495
Contextual Info: PEB 2084 Revision History: Current Version: Data Sheet 07.95 Previous R eleases: Preliminary Technical Manual 2 .9 4 Subjects major changes since last revision P age P age (in previous (in current Version) Version) 11 8 Figure 1, ID O = Output and Input

Contextual Info: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 652 . B 32 656 MKP wound capacitors Very small dimensions Construction -c: • Dielectric: polypropylene • Wound capacitor technology with internal series connection for l/R >1250 Vdc

transistor BD 263

Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vds BUZ 50 B 1000 V 2A flbsion Package Ordering Code 8 Í2 TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage ^DGR Rqs = 20 k£2

Contextual Info: • A23 SfciGS DDÔ17 3 Ü 7 ST SIEMENS PROFET BTS 734L1 Smart Two Channel Highside Power Switch Product Summary 43 5.0 . 34 Features Overvoltage Protection Vfcb AZ • • • • • Operating voltage Vbb(on) one two parallel 40 4.8 19 20 7.3 19 •

Contextual Info: LH1539 SIEMENS 1 FORM A / PHOTO DARLINGTON FEATURES • Solid state relay and autopolarity optocoupler In one 8-pin package • 3750 VRMS I/O isolation • Surface mountable • Optocoupler — Bidirectional current detection — High CTR: >300% • Solid state relay

Contextual Info: LH1521, LH1523 SIEMENS Dual 1 Form B Absolute M axim um Ratings Ta =25°C Stresses in excess of the Absolute M aximum Ratings can cause perm anent dam age to the device. These are absolute stress ratings only. Functional operation of the Symbol Test Conditions

Contextual Info: SIEM ENS 1 -A D ual-H B D Dual-Half-Bridge Driver T L E 4207 Overview Features Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption in stand-by (Inhibit) mode Low saturation voltage; typ.1.2 V total @ 25 °C; 0.4 A