2SC5018 Search Results
2SC5018 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2SC5018 | Panasonic | Silicon NPN triple diffusion planer type | Original | 35.95KB | 2 | ||
| 2SC5018 | Panasonic | Silicon NPN triple diffusion planar type transistor | Original | 70.28KB | 3 | ||
| 2SC5018 | Unknown | Japanese Transistor Cross References (2S) | Scan | 37.78KB | 1 |
2SC5018 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SC5018Contextual Info: Transistors 2SC5018 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO (0.5) |
Original |
2sc5018 | |
|
Contextual Info: Transistors 2SC5018 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 M Di ain sc te on na tin nc ue e/ d • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO |
Original |
2sc5018 | |
2SC5018Contextual Info: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.8 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 ● 1.45 1.0 1.0 ● 4.0 |
Original |
2sc5018 | |
2SC5018Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5018 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) M Di ain sc te on na tin nc ue e/ d 0.7 ue pl d in |
Original |
2002/95/ec2sc5018 | |
|
Contextual Info: Transistor 2SC5018 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 6.9±0.1 4.0 2.5±0.1 0.8 • Features 0.65 max. 14.5±0.5 (1.0) • High collector to base voltage VCBO • High emitter to base voltage VEBO |
Original |
2sc5018 | |
|
Contextual Info: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 • Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. 14.5±0.5 ● 1.0 ● (0.5) (1.0) |
Original |
2sc5018 | |
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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Original |
responsibilixp08081xp08546xp0a554xp0d873+13 | |
D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
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OCR Scan |
125mw2sc46272sc50212sa1790+16 | |
2SC144
Abstract: 2SD466 2sc5266
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OCR Scan |
t258-omifax062sc1442sd466+1 | |
D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
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OCR Scan |
2sc46092sc48082sa18062sc4627+16 | |
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
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Original |
xp06501txp06531xp06545xp0a554+13 | |
C1360A
Abstract: 2SC4971 2SB873 2SB1615 SC1360
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OCR Scan |
2sb15372sd23572sb153812sd2358+11 | |
2SB873
Abstract: 2SA879 D2483 2SC1360 2sc5018 2SD2360
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OCR Scan |
o-92nlo-92l2sb15372sb1538+12 | |
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
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OCR Scan |
mn101c01cmn101c01dmn101c025mn1020003+16 | |
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D1274A
Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
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OCR Scan |
2sc46272sc5021-2sa17902sc4626+16 | |