D1307 Search Results
D1307 Price and Stock
Fischer Elektronik GmbH & Co KG SL11SMD13070ZConnector: pin strips; pin header; male; data; PIN: 70; SMT; 3A; 250V |
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SL11SMD13070Z | 1 |
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Fischer Elektronik GmbH & Co KG SL11SMD13070SConnector: pin strips; pin header; male; data; PIN: 70; SMT; 3A; 250V |
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SL11SMD13070S | 1 |
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Fischer Elektronik GmbH & Co KG SL11SMD13072GConnector: pin strips; pin header; male; data; PIN: 72; SMT; 3A; 250V |
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SL11SMD13072G | 1 |
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Fischer Elektronik GmbH & Co KG SL10SMD1307SBTRConnector: pin strips; pin header; male; data; PIN: 7; SMT; 3A; 250V |
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SL10SMD1307SBTR | 1 |
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Fischer Elektronik GmbH & Co KG SL11SMD13072ZConnector: pin strips; pin header; male; data; PIN: 72; SMT; 3A; 250V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SL11SMD13072Z | 1 |
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D1307 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Mitsubishi th-n20kp
Abstract: AD16-22DS Kyoritsu 3301 kyoritsu model 1008 terasaki xh100ns KSD 166 16a 250v ksd 302 250v, 10a carlo gavazzi VDE 0660 ksd 250v 10a EEL 22w transformer
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100hp125hp112kw150hp+16 | |
l9122
Abstract: IT8510 asus RC415ME 12G140001089 ATI SB600 CON3603 RC415M ISL6262CRZ foxconn
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Original |
max6657msaics951463533mhzrc415m+15 | |
it8511te
Abstract: C929B Asus VARISTOR thm MW772 ICS954310cglf d4105 U2401 IT851 ISL6262CRZ
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adm1032armzics954310t2060533mhz+16 | |
SK520CContextual Info: SK52C thru SK520C Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
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sk52csk520cj-std-0202011/65/eu+5 | |
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Contextual Info: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
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tsf20h150c2011/65/eu2002/96/ecito-220ab+2 | |
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Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
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tsf10h100c2011/65/eu2002/96/ecito-220ab+2 | |
D1307
Abstract: D1305 d1308 D1309 mil-i-3190 D1304 D1303 D130 MIL-I-3190C D130-5
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mil-i-3190/2mil-i-3190cmil-i-21557com/d130+12 | |
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Contextual Info: SK32B thru SK320B Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
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sk32bsk320bj-std-0202011/65/eu+5 | |
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Contextual Info: MBRS2035CT thru MBRS20150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
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mbrs2035ctmbrs20150ctj-std-0202011/65/eu+4 | |
d0415
Abstract: transistor D1303 D1309 D0902 D09-15
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bd9271kutd0415transistor d1303d1309+2 | |
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Contextual Info: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
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tsf20h120c2011/65/eu2002/96/ecito-220ab+2 | |
LC2608
Abstract: C1308 DIODE asus sc1834 B649 R5538 cpu Yonah-2M C4409 IT8510 IT8511T
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max6657msaics954310ddr2-667667mhz+16 | |
Asus
Abstract: U2500 cpu Yonah-2M CON22 JP701 C3300 isl6227caz T5001 V3V REV-1.1 ISL6262CRZ
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ics954310667mhz945gm02g010009121+16 | |
t1829
Abstract: ASUS 943GML isl6227caz C3804 RN1608C PST9013NR ISL6262CRZ D1307 T1808
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max6657msaics954310533mhz943gml+15 | |
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REGULATOR IC 7814
Abstract: d1402 d1497 D1398 D1298 D1409 D1406 D1294 D1391 d1307
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nju657316com100seg16-common+12 | |
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Contextual Info: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
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1n58171n58192011/65/eu2002/96/ec+4 | |
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Contextual Info: SK52C thru SK520C Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
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sk52csk520cj-std-0202011/65/eu+5 | |
BD92
Abstract: D1309 D0811 transistor d1412 ch9i transistor d1202 M/TRANSISTOR d1505
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bd9271kutbd92d1309d0811+4 | |
CON1501A
Abstract: asus E23 18 IT8510 BT 342 project D3301 IT8511T cpu Yonah-2M isl6227caz L4402
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max6657msaics954310667mhz945gm+16 | |
L9122
Abstract: CON3602 12G04600479A ics951463 ATI SB600 IT8510 asus RC415ME c3506 ATI RC415ME
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max6657msaics951463533mhzrc415m+15 | |
T5230
Abstract: cpu Yonah-2M asus 22L1300 T4008 L4 ddr2 D-500-02 BT 342 project IT8510 ALC660
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ics954310667mhz945gm02g010009121+15 | |
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Contextual Info: TSF2080C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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tsf2080c2011/65/eu2002/96/ecito-220ab+2 | |
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Contextual Info: SS32 thru SS320 Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
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ss320j-std-0202011/65/eu2002/96/ec+4 | |
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Contextual Info: 1N5820 thru 1N5822 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
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1n58201n58222011/65/eu2002/96/ec+3 | |