C3300 Search Results

C3300

Abstract: ECS-C3300 3500C
Contextual Info: E C S I NC 3bE D Hi 3 0 2 ^ 3 b 2 I-5 0 -Z 3 D D 0 D1 MM 3 B E C S I FULL RANGE CRYSTAL QUARTZ OSCILLATORS ECS-C3300 • D IM E N S IO N S I FEATURES 1. 2. 3. 4. 5. Uni t : m m Miniature DIP Configuration. 19.5mm x 6.8mm x 4.2 Max. High stability. Low powered C-MOS.

CYC3000

Abstract: GND60
Contextual Info: 真 诚 为 您 服 务 C CY YC C33000000 系 系列 列压 压力 力传 传感 感器 器 CYC3000 型 压 力 变 送 器 CYC3000 型压力变送器是我公司为汽车工业方面的自动化检测和控制而研制的 主要用于燃油喷射电控系统用

Contextual Info: / '-ö 'O —2^3 3bE D E C S INC BOS^be OOODIMM 3 BECSI FULL RANGE CRYSTAL QUARTZ OSCILLATORS ECS-C3300 • D IM E N S IO N S ■ FEATURES 1. 2. 3. 4. 5. Unit : mm Miniature DIP Configuration. 19.5mm x 6.8mm x 4.2 Max. High stability. Low powered C-MOS.

mc34001

Abstract: FZJ 101 MC3400 MC34001N MC35001 MC35001AGC MC35001GC an 34001 10T2 T099
Contextual Info: M C33001/A/B M C34001/A/B M C35001/A/B SGS-THOMSON * 5 7 iu J-FET INPUT SINGLE OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT

QSK78G6

Contextual Info: Generator set data sheet Model: Frequency: Fuel type: kVA rating: C3300 D5 2660 DQLB 50 Diesel 3000 Data Center Continuous Spec sheet: SS18-CPGK Noise data sheet: ND50-OSHHP Airflow data sheet: AF50-HHP Derate data sheet: DD50-OSHHP Transient data sheet:

C33000NT

Abstract: C33001 C33031 C33040 C33058 c33035 C33029 C330-16 C3304-7 C33028
Contextual Info: RF INDUCTORS Molded Chip Inductors C33,000 SERIES WITH TAB WITHOUT TAB TERMINATIONS TERMINATIONS VANGUARD P/N VANGUARD P/N ACTUAL SIZE TOP VIEW Inductance Min uH Q SIDE VIEW Typ Q Test Freq MHz SRF MHz Min DCR Current Ohms mA Max Max C33000 C33001 C33002 C33003

C3300

Abstract: CP7000 mercedes
Contextual Info: 10/2000 ISSN 1430 – 5887 E LEKTROTECHNIK + E LEKTRONIK IN DER I NDUSTRIE SONDERTEIL VISION LEITFADEN ZUR TOUCHSCREENS: REMOTE-I/O-SYSTEM SICHERHEITSNORM INTEGRATION UND VERBINDET MIT DER EN 954-1 ERSCHIENEN TECHNIK-TRENDS QUALITÄTSSICHERUNG WWW.EA-ONLINE.DE

Contextual Info: r = 7 ^ 7 # S G S -T H O M S O N ¡Ü 13S S Æ I lj^]D g[H] [l[L[l(gir[Hj©iDOi_ M C35004/A/B J-FET INPUT QUAD OP-AMPs • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION

S330020

Abstract: Z330187 R330111 C330029 y330025 R330019 w330184 V330183 X330185 T330021
Contextual Info: y«\44< *> Semiconductor Fuses European Fuses DIN 000 Fuses 6,6 gRB-URB - 5 URB GERMAN STANDARD 500 - 660 V AC gRB- URB from 20 to 400 A Size: 000 EXTREMELY HIGH INTERRUPTING RATING FUSES: PROTECTION OF POWER SEMICONDUCTORS ACCORDING TO 269.1 AND 4 500- 660 V VOLTAGE RATING RATING 20 TO 400 A

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

IRF5505

Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT

C8816

Abstract: ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103
Contextual Info: 5 4 3 2 1 AC_BAT_SYS 0925 +5VO 0925 + Q8200 R8209 4.7Ohm D + 1 D1_1 G1 8 2 D1_2 S1/D2_3 7 3 G2 S1/D2_2 6 4 S2 S1/D2_1 5 G D +1.05VO S Q8201 SI4800BDY @ JP8203 1 C8211 0.1UF/50V MLCC/+/-10% R8206 0Ohm C8213 4.7UF/6.3V MLCC/+/-10% 1 2 TPC28T T8209 TPC28T T8216

ISL9504

Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

ICS9LPRS906CGLF

Abstract: u711 MS1719 sd memory card socket TPS2231 intel g41 msi Socket AM2 M31-3904078-W03 rtl8111b bk51
Contextual Info: A B C MS-17191 VER : 2.0 D E Page 3,4 1 2 3 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 HOST BUS 04 : Merom-2 (POWER/GND) 05 : CRESTLINE-1 (HOST BUS) 06 : CRESTLINE-2 (DMI/VGA) 07 : CRESTLINE-3 (DDR) 08 : CRESTLINE-4 (POWER-1) 09 : CRESTLINE-5 (POWER-2)

rtl8111* Reference

Abstract: ICH8M 676 KB910QF ICS9LP505 ICS9LP505-1 isl6262acrz R5C832 n5c1 ENE3910 SLG8SP51
Contextual Info: 5 4 MS-1313 VER : 0.A 3 2006/10/18 2 Merom 478 Page 3,4 D C B 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 CPU HOST BUS 04 : Merom-2 CPU (POWER/GND) 05 : 965GM-1 (HOST) 06 : 965GM-2 (DMI / VGA) 07 : 965GM-3 (DDR) 08 : 965GM-4 (Power-1) 09 : 965GM-5 (Power-2)

ISL6259

Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01

ASUS

Abstract: fingerprint rs 306 nvidia nb8 vga board AT24C02B Q2400a Q4500 TMs 1122 NL IT8510 it8511 C5500
Contextual Info: A B C D E A8E/A8S Merom/GM965/PM965 BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 CLOCK GEN ICS9LPR363AGLF-T 29 CPU MEROM LFB 2 DVI CH. LFB LFB CPU CAP POWER SEQENCE 2 5 LFB HOST BUS Dual 47 CRT & TV 46 CON . 3,4 VGA CON Nvidia NB8x series

c5129

Abstract: C5149 C5148 88E8001 CPUTEST29H D4203 D4004 u6202 R6130 R6503
Contextual Info: 5 4 3 2 A6M 1 REVISION: 2.0 128-BIT AMD S1g1 D Unbuffer DDR2 SO-DIMM Channel A/B x16 HyperTransport 200/400/800 MHz 638 PIN PACKAGE LVDS nVIDIA Gigabit Ethernet RTL8111B PCI-E x1 CRT C51MV C TV OUT X8 /X4 HyperTransport 200/400/800 MHz BGA 468 PCMCIA 33MHz

MS-16371

Abstract: TST*1284 LVC-C30SFYG intel g41 msi Socket AM2 8101E TST12 M31-3904078-W03 intel crb slg 63237-1
Contextual Info: 5 4 3 MS-16371 VER : 1.0 D C B 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 HOST BUS 04 : Merom-2 (POWER/GND) 05 : CRESTLINE-1 (HOST BUS) 06 : CRESTLINE-2 (DMI/VGA) 07 : CRESTLINE-3 (DDR) LVDS 08 : CRESTLINE-4 (POWER-1) Page 14 09 : CRESTLINE-5 (POWER-2)

asus

Abstract: FA8142 PT8300 RS690M ATI M76-M m64m H5401 PT8700 M64-M ATXP1 8632e
Contextual Info: 5 4 3 2 1 */E*/I &PSGO MEKVEQ VGA VCORE D AMD CPU S1g1 CPU VCORE PAGE 85 PAGE 80 Clock gen. DDR2-800MHz PAGE 29 Dual Channel DDR2 D SO-DIMM X 2 Power On Sequence Up to 4GB DDRII PAGE 7,8,9 PAGE 32 PAGE 3,4,5 Li-Ion 6 cells:4800mAH,3S2P,53.28W (3S2P;4.2*3=12.6V;2400mAH*2=4800mAH;

ferraz protistor a070

Abstract: FR10GB69V30 FR10GB69V16
Contextual Info: Semiconductor Semiconductorfuses AC fuses Other Protistor Fuses Ferrule Fuses 10x38 gRB - 690VAC 690V AC gRB - from 1 up to 30 A Size: 10x38 The fuse preselection table below indicates: - rated current (or rating) IN pre-arcing I2t (I2tp) at 1 ms total operating I2t (I2tt) at 690V, cos ϕ=0.15, and for a total operating time from 8 to 10 ms