TSF2080C Search Results
TSF2080C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
Original |
tsf2080c2011/65/eu2002/96/ecito-220ab+2 | |
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Contextual Info: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
Original |
tsf2080c2011/65/eu2002/96/ecito-220ab+2 | |
|
Contextual Info: TSF2080C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
Original |
tsf2080c2011/65/eu2002/96/ecito-220ab+2 | |
|
Contextual Info: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
Original |
tsf2080c2011/65/eu2002/96/ecito-220ab+2 |