TSF10H100C Search Results
TSF10H100C Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSF10H100C | 
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DIODE ARRAY SCHOTT 100V ITO220AB | Original | 579.96KB | 6 | ||
| TSF10H100C C0G | 
 | 
Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTT 100V ITO220AB | Original | 243.43KB | 
TSF10H100C Price and Stock
Taiwan Semiconductor TSF10H100CDIODE ARR SCHOT 100V 5A ITO220AB | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
 | 
TSF10H100C | Tube | 994 | 1,000 | 
  | 
Buy Now | |||||
Taiwan Semiconductor TSF10H100C C0GDiode Schottky 100V 10A 3-Pin(3+Tab) ITO-220AB Tube | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
 | 
TSF10H100C C0G | 1,000 | 9 | 
  | 
Buy Now | ||||||
 
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TSF10H100C C0G | 1,000 | 99 Weeks | 1 | 
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Buy Now | |||||
TSF10H100C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| 
 Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency  | 
 Original  | 
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307010 | |
| 
 Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability  | 
 Original  | 
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 | |
| 
 Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency  | 
 Original  | 
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309046 | |
| 
 Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability  | 
 Original  | 
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 | |
| 
 Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency  | 
 Original  | 
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 | |
| 
 Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability  | 
 Original  | 
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408022 |