B649
Abstract: B-649
Contextual Info: SAW Components Satellite Receiver Filter B649 479,50 MHz Preliminary Data Sheet Metal package TO 39 Features ● Two-channel satellite receiver filter ● IF filter for DSB receivers ● Constant group delay Terminals ● Gold-plated NiFeCo alloy Dimensions in mm, approx. weight 1,0 g
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B688
Abstract: B628 b649 transistor b688 b688 transistor b673 b673 power transistor b673 transistor b643 R B667
Contextual Info: M AN646 Interfacing Motorola 68HC11 to Microchip SPI Serial EEPROMS communication. Serial EEPROM devices are available in a variety of densities, operational voltage ranges, and packaging options. Shannon Poulin Microchip Technology Inc. Microchip realizes that its customer base is very broad,
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an64668hc11b688b628+8b649transistor b688b688 transistorb673b673 power transistorb673 transistorb643 rb667
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LT829
Abstract: 8085A intel 8080 MCS intel 8295 8041A 8080
Contextual Info: m i e i APPLICATION NOTES AP-90 M ay 1980 An 8741 A/8041 A Digital Cassette Controller I Contents IN T R O D U C T IO N . 1 T H E C M -6 0 0 M IN I- D E K " .
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transistor b688
Abstract: b673 power transistor b649 B688 b688 transistor B667 A709 transistor transistor b643 transistor B633 b673 transistor
Contextual Info: M AN646 Interfacing Motorola 68HC11 to Microchip SPI Serial EEPROMS communication. Serial EEPROM devices are available in a variety of densities, operational voltage ranges, and packaging options. Shannon Poulin Microchip Technology Inc. Microchip realizes that its customer base is very broad,
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an64668hc11transistor b688b673 power transistor+8b649b688b688 transistorb667a709 transistortransistor b643transistor b633b673 transistor
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b649
Abstract: D1001UK
Contextual Info: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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b649
Abstract: D1001UK 20V5A
Contextual Info: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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b649
Abstract: D1001UK D1019UK enamelled copper wire
Contextual Info: TetraFET D1019UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
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d1019uk175mhz19swg22swg+4b64920a618x830b649d1001ukenamelled copper wire
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b617
Abstract: b649 b605 transistor b647 B647 b649 transistor transistor b647 bb pressure sensor circuit transistor B633 b63e
Contextual Info: Signal Acquisition and Conditioning With Low Supply Voltages SLAA018 August 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
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slaa018tms7000mc68hc11tlv1543+10b617b649b605transistor b647b647b649 transistortransistor b647 bbpressure sensor circuittransistor b633b63e
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G1966M SAW FILTER
Abstract: 8 PIN SMD IC 314-150 k3264 K2977M L9453M ofw g 3254 b684 saw filter k6272k K9260M SIEMENS saw filter 44 MHz M3951M
Contextual Info: Siemens Matsushita Components One Port Resonators Center Frequency MHz 239,75 297,80 303,83 304,25 304,30 308,50 314,50 315,00 315,00 315,00 345,00 390,00 392,85 403,05 403,55 407,25 417,50 418,00 423,17 Type Frequency Frequency Insertion Tolerance Tolerance Attenuation
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g1966m saw filter8 pin smd ic 314-150k3264k2977m+6l9453mofw g 3254b684 saw filterk6272kk9260msiemens saw filter 44 mhz m3951m
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b649a
Abstract: B649 2B649 2SD66 2SB649A
Contextual Info: B649,B649A Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD669/A Outline T O -126 MOD I 1. Em itter 2. Collector 3. Base B649, B649A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol B649
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b649
Abstract: SKM214
Contextual Info: s e MIKRO n Absolute Maximum Ratings Symbol Conditions ' V ds V dgr R gs = 20 ki2 Id Idm V gs Pd Tj, Tstg Visol humidity climate AC, 1 min, 200 iA DIN 40 040 DIN IEC 68T.1 Values Units 100 100 125 375 ±20 400 - 5 5 . . .+150 2 500 Class F 55/150/56 V V SEMITRANS M
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22SWG
Abstract: b649 D1002UK
Contextual Info: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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b649
Abstract: HF power amplifier D1001UK D1002UK D1001UK
Contextual Info: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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burndy Y750
Abstract: burndy Y35 Burndy Y35 hypress IEEE-837 burndy* YA Lug Burndy burndy Y39 STR 5634 kpb 1313 B455 E20
Contextual Info: BURNDY Grounding TABLE OF CONTENTS HYGROUND® IRREVERSIBLE COMPRESSION GROUNDING AND INSTALLATION TOOLING ® HYGROUND Features Type YGIB . . . . . . . . . . E-20 - E-21 and Benefits . . . . . . . . . E-5 - E-6 E-1 Type YGL-C . . . . . . . . . . . . . . . . E-7
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B4404
Abstract: BS-2028 BS 5419 B1329 B589 B938 b2498 B1276 B549 BS-2021
Contextual Info: BURNDYWeld BCC-1 TYPE MOLDS Horizontal End to End BCC-1 Type Molds are used for horizontal end to end cable connections. Size range is #6 through 1000 MCM solid or concentric stranded copper conductors. Contact BURNDY Products for information on molds for
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Contextual Info: TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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b649
Abstract: D1001UK D1019UK
Contextual Info: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS H • LOW Crss
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D5001UK
Contextual Info: TetraFET D5001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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b649
Abstract: enamelled copper wire transistor mhz s-parameter low-noise VHF D1019UK zl 9312
Contextual Info: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A FEATURES B • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F E H G D • LOW Crss
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b649
Abstract: D1019UK ferrite core ER25
Contextual Info: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss G
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burndy Y35 Hypress owner manual
Abstract: burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual
Contextual Info: GC-08 www.burndy.com CALL 1-800-346-4175 FOR YOUR LOCAL SALES REPRESENTATIVE BURNDY PRODUCTS BURNDY PRODUCTS Grounding Catalog Experience. Technology. Answers. Customer Service Dept. 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 Canada 1-800-361-6975 Quebec
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gc-08ygibw28-613-2nygibw28-675-2nygibw34-338-2n+16ygibw34-400-2nygibw34-462-2nygibw34-550-2nygibw34-613-2nygibw34-675-2nygl29c2burndy y35 hypress owner manualburndy y39 hypress owner manualburndy y35 hypressburndy y35burndy y750ul-467penetrox a electric joint compoundy750 revolver hypressgbm step motorburndy y750hs user manual
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NEC B1099
Abstract: NEC b1098 str 6307 B1284 B1273 B1329 nec b1669 B1134 b1686 STR S 6307
Contextual Info: BURNDY PRODUCTS BURNDYWeld BW-06 B BURNDYWeld™ Customer Service Open 8:00 am to 8:00 pm E.S.T. Monday — Friday Call Us At: 1-800-346-4175 FAX 1-800-346-9826 www.fciconnect.com 2 Customer Service: 1-800-346-4175 www.fciconnect.com BURNDYWeld™ TABLE OF CONTENTS
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Contextual Info: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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b649
Abstract: D1001UK
Contextual Info: TetraFET D1001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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