D07-15 DIODE Search Results

diode D07-15

Abstract: D07 15 d07-15 diode d07-15 diode D07-15 04 d0715 diode D07-15 30 fast recovery diode 1500V diode erd07-15
Contextual Info: ERD07 1.5A (1300V to 1500V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Features Most suitable for color T.V. damper Marking High voltage by mesa design High reliability Color code : White Applications D07- 15 51 Abridged type name

D07 15

Abstract: d07 15 58
Contextual Info: DIODES ZENER DIODES BY ASCENDING Vz GLASS PACKAGE C o n tin u e d TYPE V z @ lz TOL VOLTS ±VZ NO M INAL % Zz @ l z lz TEST CURRENT ohms mA MAX /iA •r @ Vr T.C. MAX @ VOLTS %/°C Package 1N964B 13 5 9.50 13 .10 @ 9.9 +.079 D0-7 1N964B JAN 13 5 9.50 13

lN34A

Abstract: Germanium itt
Contextual Info: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap

SS321

Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

964B

Abstract: LL964B 04 6269
Contextual Info: Zener Regulator Diodes Type Mil Spec Data P o w er S h e e t ID <W Vz : V) Izt 1 (mA) Zzt Z zk <n) <m VR i To i. i I i M ic ro s e m i I P a c k a g e D iv is io n | O u tlin e “ P art N u m b e r Microsemi (V) [(+/-%) 1N759 S cottsd ale D O -35 STD 5256

common anode schottky to220

Abstract: diode d07 anode common fast recovery diode c 92 M - 02 DIODE 3a ultra fast diode D041 SE 40 RECTIFIER Super matched pair 519 SOT23 anode common fast recovery diode dual
Contextual Info: DIODES & RECTIFIERS GENERAL PURPOSE NTE Type No. Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts Maximum Average Forward Current (Amps) Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop {Volts)

diode D07-15 54

Contextual Info: SN74F1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDFS085 - AUGUST 1992 • Designed to Reduce Reflection Noise • Repetitive Peak Forward Current. . . 300 mA • 8-Bit Array Structure Suited for Bus-Oriented Systems SC PACKAGE TOP VIEW D01 D02

Z5B6.2

Abstract: zener diode bzy88 z586 zener diode in746 IS2030A zener z5B6 axial zener z5.6bp zener Z5.6Bp
Contextual Info: SEM ITRON IN D U STR IES LTP M3 E I> 8 1 3 7 0 0 = G O D D I S ? • 1 «S LC B SERIES Hermetically Sealed Packaged ■Voltage Regulator Diode Released to BS9305-F0086 ■Voltage Range 2V7 to 39 Volts 400 mW Steady State ■120 Watt Peak Power BZY88 Series Available

S1 DIODE schottky

Abstract: SN74F1056
Contextual Info: SN74F1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDFS085 – AUGUST 1992 • • • SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems D01

Contextual Info: SCHOTTKY DIODE ARRAY SDA24 ISSUE 3 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA24 S chottky Barrier Diode A rra y is designed to reduce reflection noise on high speed parallel data lines. • Reduced re fle c tio n noise • R e p e titive peak fo rw a rd c u rre n t 2 00m A

Contextual Info: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 D D D SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems

Contextual Info: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parailei data lines. • Reduced reflection noise • Repetitive peak forw ard current • 200mA

Contextual Info: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY _SDLS019B- APRIL 1990 - REVISED JULY 1997 Designed to Reduce Reflection Noise SC PACKAGE TOP VIEW Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems

Contextual Info: SN74F1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDFS085A – AUGUST 1992 – REVISED JULY 1997 D D D SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems

TS1937

Abstract: TS1937CX5
Contextual Info: TS1937 Boost Step-up WLED Driver SOT-25 Pin Definition: 1. SW 2. Ground 3. Feedback 4. CTRL 5. Input General Description The TS1937 is a step-up DC/DC converter specifically designed to drive white LEDs with a constant current. The device can drive 2 ~ 12 LEDs in series from a Li-Ion cell. Series connection of the LEDs provides identical LED

in823

Abstract: IN821 DIODE D 92 02 78.P
Contextual Info: S E M I T R O N I N D U S T R I E S LTD IN82I-82 M3E T> ñiaTññT DOGGlbT ñ • SLCB SERIES Zener Reference Diodes 6V2 and 6V55 Volts Temperature Compensated APPLICATIONS ■ Semitron's ‘ZR’ range of silicon voltage references are designed and tested to provide an economical and stable

Contextual Info: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERI ES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07

1n9148

Abstract: D035 1N483A Diode d07-15 1n461 by 1N456A IN662A 1N484 J 1N456 1N457
Contextual Info: ssm m t QQD03S2 ' ' 2514 096 CR IMS ON S E M I C O N D U C T O R INC , ; " 990 0 03 5 2 D ’ 7~- 6 i - O f SILICON DIODES r ît Typ# Case Min. Forward P.I.V. Currant Volts at I V Ravarsa Currant at 25% Ra* vana Volt*3« //A mA Maximum Ravtrsa Currant at Tamp.

dh730

Abstract: JVR 0.7
Contextual Info: \ SILICON TUNING VARACTORS This series of Si tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated m esa tech n ology. P a c k a g e d or ch ip d e v ice s are a v a ila b le for VHF linear electron ic tuning. Packaged diodes

74s1053

Abstract: s1053 SN74S1051 SN74S1053 array resistor mil diode box switching diode 16 array vqc 10 display
Contextual Info: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY D 3424, S E P T E M B E R 1990 Designed to Reduce Reflection Noise DW OR N PACKAGE TOP VIEW Repetitive Peak Forward Current. . . 200 mA v cc [ 1 16-Bit Array Structure Suited for Bus-Oriented Systems

IN939

Contextual Info: SEMITRON INDUSTRIES LTD 43E D B 013700^ 0000171 b BISLCB IN935-940B s e r i e s Zener Reference Diode 9V0 Volt Temperature Compensated APPLICATIONS • The ZR range are designed for operation at a specified current from 2 - 1 5 mA. It is recommended that Iz is held

diode D07-15

Abstract: D07 15 d07-15 D0715 d07-15 diode diode D07-15 04 diode D07-15 30
Contextual Info: ERD07 1.5A (1300V to 1500V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Features Most suitable for color T.V. damper Marking High voltage by mesa design High reliability Color code : White Applications Voltage class