D027 Search Results

BLX68

Abstract: uhf tv power transistor 500 w 8w RF POWER TRANSISTOR NPN philips rf choke ferrite transistor c 1971 FX1115 G027
Contextual Info: PH IL IPS I N T E R N A T I O N A L MAINTENANCE TYPE MIE J> m ?110fi2b D027ÛG3 S S P H I N BLX68 - T -3 3 -0 7 — U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with

CNY17 Harris

Abstract: CNY17 III
Contextual Info: 3875081 G E S O L ID STATE 01E 19822 Optoelectronic Specifications _ T HARRIS SEMICOND SECTOR 37E D I - m - S 4305271 D0272Û4 4 * H A S Photon Coupled Isolator CN Y17 Ga As Infrared Emitting Diode & npn Silicon Photo - Transistor T h e G E Solid S tate CN Y17 consists o f a gallium arsenide infrared

IN5401

Abstract: IN5405 IN5408 IN5404 IN5400 IN5406 IN5402 IN 5406 IN5403 R250B
Contextual Info: GENERAL PURPOSE RECTIFIERS r CASE PART V rrm V rsm I RRM NUMBER V (V) (MA) t a IFSM @ 60Hz (A) (°C) (A) l0 * @ l2 t ' ( A 2 -Sec.) V fm @ l F (V) (A) D027M IN5400 50 100 10 3.0 50 200 165 D027M IN5401 100 200 10 3.0 50 200 165 1 3 D027M IN 5402 200 300

Contextual Info: b'lE D N AMER PHILIPS/DISCRETE • bb53131 D0277D2 m i BF494 ■ APX V _ J SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope intended fo r HF applications in radio and television receivers; it is especially recommended fo r FM tuners, low noise AM mixer-oscillators with high source

AmPAL16R8

Abstract: 16H8 AmPAL16R4 16R4Q 16R8 8103613RX 16L8 16R4 16R6 electrical bra
Contextual Info: ADV MICRO PLA/PLE/ARRAY sT Î dË | . 0257SSL, D0272M2 T-46-13-47 ' AmPAL16R8 Fam ily 20-Pin IMOX"* Programmable Array Logic PAL Elements Distinctive Characteristics ! i r • AMD's superior IMOX technology - Guarantees tp o “ 1S ns Max. " B " Versions

BC369

Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
Contextual Info: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.

BSS51

Abstract: BSS50 BSS52 BSS60 BSS61 BSS62
Contextual Info: bTE D N AMER PHILIPS/DISCRETE • btS3T31 D027flSh 553 ■ APX BSS50 to 52 A N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.

BYV26

Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E BYV26F BYV26G diode BYV26E
Contextual Info: N AUER P H I L I P S / D I S C R E T E bbsa^ai b' i E D027D2b Philips Semiconductors • N o n -sn a p -o ff soft- recovery sw itch in g ch a racteristics • C a p a bility of absorb in g reverse tra n sie n t energy. BYV26 series Q U IC K R E FE R E N C E DATA

BSR50

Abstract: bsr51 BSR52 BSR60 BSR61 BSR62
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> • b b i a ^ l D027Ô41 022 ■ APX BSR50 to 52 Jl N-P-N DARLINGTON TRANSISTORS S ilicon planar transistors in plastic T O -9 2 envelopes, intended fo r industrial switching applications e.g. p rin t ham m er, solenoid, relay and lamp driving.

Q62901-B65

Abstract: Q62901-B64 LY5420-LP LG5410-R LY5420-N S420 5420 Siemens LED brightness
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • 6S3SbDS -t-HI'P-I D027135 1 MSIEG red LR SUPER-RED LS YELLOW LY GREEN LG SIEM EN S 5420 5420 5420 5410 T13/4 5 mm LED LAMP FEA TUR ES * High Light Output * Water Clear Lens: Green Lightly Tinted Clear Lens: Red, SuperRed, Yellow

diode IN4000

Abstract: in4000 1n4000 DIODE P600 diode diode P600A 1N4004 or 1N5404 diode P600M DC 1NS400 p600m DIODE IN4000 diode
Contextual Info: 5SE » GOLDENTECH DISCRETE MOEbSTfi OOGOOGfl C3 I N - GOIDEHTECH DIKRETC JEmiCOnPUCTOR 1.0 3.0 6.0 AMPERES DIODE RECTIFIER 0041/D027/P600 IN4000 IN5400 s P600 E R I IN4000/IN5400/P600 E MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS fitting* at 2S*C ambient temperature unless otheiwtsa specified;

Contextual Info: I I N AMER PHILIPS/DISCRETE b^E D • bb53^31 D027SSE lbS BC376 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO-92, intended fo r low-voltage, high-current LF applications. BC375/BC376 is the matched complementary pair suitable fo r ou tp u t stages up to 2 W.

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 D0273M0 bBl H A P X 11 BTA151 SERIES bTE D THYRISTORS Glass-passivated thyristors intended fo r use in applications requiring high thermal cycling and repeated switching performance w ith low thermal resistance. Typical applications include temperature and

002741b

Abstract: pm3565 PE8550 FTS03565 PE8050 pn3563 13474 3563 PN3569 tT 2742
Contextual Info: FAIRCHILD SE MI CON DUC TO R fi4 DE|34^t,74 3469674 FAIRCHILD SEMICONDUCTOR D027412 84D 2 74 12 D mmm PE805D/PE8550 7“- A ^ A 3 FA IR C H IL D NPN-PNP General Purpose Complementary Amplifiers & Output Drivers A Schlumberger Company PACKAGE PE8050 PE8550

D027A

Abstract: SF32 SF33 SF34 SF35 SF36 D0-27A
Contextual Info: 3.0 Amp SUPER FAST PLASTIC RECTIFIERS SF31 . . . 36 Series Data Sheet Mechanical Dimensions Description D027A 1.00 Typ. .374 .050 .197 Features n LOW COST n HIGH SURGE CAPABILITY n LOW LEAKAGE n MEETS UL SPECIFICATION 94V-O Electrical Characteristics @ 25o C.

Contextual Info: N AMER PHILIPS/DISCRETE b'lE T> bbS3T31 D0271D? 5^6 H A P X Preliminary specification Philips Semiconductors 1PS226 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. MAX.

Contextual Info: N AUER PHILIPS/DISCRETE bRE D ^ 5 3 ^ 3 1 D027D37 3MH « A P X Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

BTW40-400R

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » D0273b0 47T H A P X BTW40 SERIES J V THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended for use in power control applications in general, and lighting control in a.c. controller circuit up to 2,5 kW in particular. A feature of the

M27256F1

Contextual Info: 7^5=1537 D02735D Z -Z P \ 4 S G S -T H O M S O N M27256 £ j l S G S-THOMSON . 30E » 256K 32K x 8 NMOS UV ERASABLE PROM • FAST ACCESS TIME: 170ns 200ns 250ns 300ns 450ns MAX MAX MAX MAX MAX M27256-1F1 M27256-2F1/M27256-20F1 M27256F1/M27256F6/M27256-25F1

IN6284a

Abstract: in6285A IN6283A IN6282A IN6277 IN6267A IN6292A IN5908 IN6275A IN6286A
Contextual Info: POWERZORB L8 Series 1.5 KW Transient Absorption Zener Diodes A range of unipolar protection diodes in a moulded D027A package. P s u rg e -1.5KW; — ;— — !- '•-/1 . . ~*i<

triac btw43

Abstract: am2632 induction furnace BTW43-600G induction furnace currents M2638 1000H BTW43-600 BTW43-600H
Contextual Info: N A ME R PHILIPS/DISCRETE bTE D • D02737D _ I^ 3 1T H A P X BTW43 SERIES TRIACS Gtass-passivated silicon triacs in m etal envelopes, intended fo r industrial a.c. po w er c o n tro l and p a rtic u la rly suitable fo r static switching o f 3-phase in duction m otors. T h e y m ay also be used fo r

Contextual Info: H A R R IS SEM IC O ND SECTOR 37E ]> 4302271 D02733Ö 1 B IH A S Optoelectronic Specifications. T -Hi-53 Photon Coupled Isolator MCT210 G aA s In fra re d E m ittin g Diode & NPN Silicon Photo-T ransistor The GE Solid State MCT210 is a gallium arsenide, infrared emitting

Contextual Info: 3.0 Amp SUPER FAST PLASTIC RECTIFIERS D ata Sheet Mechanical Dimensions D027A . 1.00 Typ. „ .374 L T i .050 SF31 .197 1 t Features • LOW COST ■ HIGH SURGE CAPABILITY ■ LOW LEAKAGE ■ MEETS UL SPECIFICATION 94V-0 Units E le c tr ic a l C h a r a c t e r is tic s @ 25°C.

Contextual Info: Data Sheet 6.0 Amp SUPER FAST PLASTIC RECTIFIERS m iconductor Mechanical Dimensions D027A 11 T 1 i _L I t i -.374 — , .00 Typ. ! SF61 197 .050 Features • LOW COST ■ HIGH SURGE CAPABILITY ■ LOW LEAKAGE ■ M EETS UL SPECIFICATION 94V-0 U n its E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 * C .