G027 Search Results

Contextual Info: 3875081 G E SOLID STATE 01E 19848 D Optoelectronic Specifications_ T - u /j. HARRIS SEMIC0N» SECTOR 37E D 430SS71 G02731Q 1 Photon Coupled Isolator C N Y 4 8 M IL L I M E T E R S SW 80L- Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier

PHOTOTRANSISTOR 3 LEGS

Abstract: GFH600-1 GFH600 S3 UM1 340 opto isolator
Contextual Info: HARRIS SEMICOND SECTOR 37E T> 4302271 G027322 fl ESHAS Optoelectronic Specificatio ns_ Photon Coupled Isolator GFH600 Ga As Solid S tate L am p & NPN Silicon Photo-T ransistor T h e G E Solid S ta te G F H 600 consists o f a gallium arsenide infrared

quadrant photodiode

Abstract: D027455 i380
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E » • fl235bOS G027455 3 « S I E G S IE M E N S SFH204 SILICON FOUR QUADRANT PHOTODIODE T - - H 1- 5 I Package Dimensions in Inches mm — 21 (5.4) 1 8 ( 4 , 5 ) _ - 020 .18 (4,5) 17 (4,3) ^ if_* \r ^ J (0,5) . .30 (7,5)

21140-AF

Abstract: 21140AF 21140 G027 intel 21140
Contextual Info: Product Change Notification Product Change Notification: #G027, addendum 1 Please respond to the Intel Contact above if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of change and the change

Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbOS G0273b3 SIEM EN S «SIEG LD273 TWO CHIP INFRARED EMITTER -r=^f-n Package Dimensions in Inches mm Chip Location 024 (0 6) 016{0 4) 5 ft - r ~ 354(9 0» 035 {0 8) 020 (0 5 ) ^ / 1JJ g g 181(461 323 (8 2 ) T ^ -— l

Contextual Info: 01E 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications_ Light Detector 4302571 G02727M 37E D H A RR IS SEillCOND S E CT OR 19812 1 • HAS 7 ^ 4 / - < £ / Planar Silicon Photo Transistor BPW36, BPW37 T he G E Solid S tate BPW 36 and BPW 37 are highly sensitive N P N P lan ar Silicon Phototransistors.

BTW38-600R

Abstract: BTW38 600R 800R 1000R M1386
Contextual Info: N AMER PHILIPS/DISCRETE t.'ìE J> m ^53=131 G027355 3T3 H A P X BTW38 SERIES THYRISTORS Glass-passivated silicon th y ris to rs in m etal envelopes, intended fo r use in pow er c o n tro l c ircu its e.g. lig h t and m o to r c o n tro l and pow er sw itching systems.

Phototransistor SFH 600-2

Abstract: d2727 din 40040 humidity 202E DIN57471 SFH600 VDE0110 VDE0471 Siemens optocoupler IL K 4080
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E ß • 023SbG5 S IE M E N S G02727Û 7 ■ SIEG SFH600 SERIES PHOTOTRANSISTOR OPTOCOUPLER Package Dimension in Inches mm 307(7.8) ¿91 (74) t 138(3 5) 130(3 3) .343 (8 T> 335 (SS) .02 _L =1 .256(6-5) .246(6 3) (OS) 142 (3 6)

Contextual Info: H A R R IS SEM IC O N D SECTOR 3?E V m 43QE271 G027172 4 I HAS Optoelectronic Specifications Photon C oupled Isolator H11B1,H11B2,H11B3 S Y Ï.B O L - M IN Ga As Infrared E m ittin g D iode & NPN Silicon P hoto-D arlington A m plifier The GE Solid State H 11B 1, H 11B2 and H 11B3 are gallium arsenide,

Contextual Info: HARRIS SEMICOND SECTOR 37E D 4 305 27 1 G027332 IHAS Optoelectronic Specifications_ T * - 4 J- S 7 Photon Coupled Isolator MCS2, MCS2400 G a A s I n f r a r e d E m ittin g D io d e & L ig h t A c tiv a te d S C R — SYMBOL* A - A B C D E F G H

OLB 2300

Contextual Info: SIEMENS AKTIEN GESELLS CHA F 47E D • aZ35bQ5 G027104 7 ■ SIE6 S IE M E N S SUPER-RED yello w GREEN OLB 2300^^ YLB 2400 GLB 2500 LIGHT BARS P a c k a g e D im e n s io n s in In c h e s m m » L— (1016) — H « » —I MW MM 1 1 1 _« r<J«n PIN FUNCTION

Siemens photodiode visible light

Abstract: U850 diode U850 SFH 207 C100 859 v5 n40e
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E » • 023SbüS G0274b5 S IE M E N S h «SIE6 SFH207 SILICON PIN PHOTODIODE Package Dimensions mm C ir c u it d ia g r a m -È * FEATURES Maximum Ratings * Package: Chip on PC Board, Fully Encapsulated * High Reliability * No Testable Degradation

1-640098-6

Abstract: 350090-1 7687a
Contextual Info: • 07R7312 G027533 b?T ■ AMP D im e n sio n in g : Dim ensions are in inches and millimeters. Values in brackets are metric equivalents. Headers .100 [2.54] Centerline Chart contains dim ensions in inches over millimeters. .025 [0.64] Square Straight Posts

BC876

Abstract: BC880 BC875 BC877 BC878 BC879 BC879 darlington
Contextual Info: N AMER PHILIPS/DISCRETE b'iE D • G027bGS EST BÜÖ7Ö IAPX BC878 BC880 SMALL-SIGNAL DARLINGTON TRANSISTORS PNP epitaxial small-signal Darlington transistors, each in a plastic TO-92 envelope w ith an integrated diode and resistor. They can be used fo r general purpose low frequency applications and as relay drivers etc.

Contextual Info: ADS8028 www.ti.com SBAS549B – MAY 2011 – REVISED MARCH 2012 12-Bit, 1-MSPS, 8-Channel, SAR ADC with Internal Reference and Internal Temperature Sensor Check for Samples: ADS8028 FEATURES DESCRIPTION • The ADS8028 is a 12-bit analog-to-digital converter

Contextual Info: BurrĆBrown Products from Texas Instruments PCM3002 PCM3003 SBAS079A – OCTOBER 2000 – REVISED OCTOBER 2004 16/20-BIT SINGLE-ENDED ANALOG INPUT/OUTPUT STEREO AUDIO CODECS FEATURES • • • • • • • • • Monolithic 20-Bit ∆Σ ADC and DAC 16/20-Bit Input/Output Data

s0273

Abstract: ci 4012 S0273-01 S0273-0 s0281 S0274-01 10Log1
Contextual Info: THS4021 THS4022 www.ti.com SLOS265C – SEPTEMBER 1999 – REVISED JULY 2007 350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS FEATURES 1 THS4021 D and DGN Package Top View • Ultralow 1.5-nV/√Hz Voltage Noise • High Speed: – 350-MHz Bandwidth (G = 10, –3 dB)

GSV1

Abstract: INA223
Contextual Info: INA223 www.ti.com SBOS528 – JUNE 2012 Analog Output Current Shunt and Voltage Instantaneous Power Monitor Check for Samples: INA223 FEATURES DESCRIPTION • • • The INA223 is a voltage-output device that monitors the current, bus voltage, and power of a supply line

T4531

Contextual Info: THS4531 www.ti.com SLOS358B – SEPTEMBER 2011 – REVISED MARCH 2012 Ultra Low Power, Rail-to-Rail Output, Fully-Differential Amplifier Check for Samples: THS4531 FEATURES DESCRIPTION • The THS4531 is a low-power, fully-differential op amp with input common-mode range below the negative

ADS62P4X

Abstract: AZ62P44 voltage stabilizer winding data ADS62P42 ADS62P43 ADS62P44 ADS62P45 DA10 marking lpkg
Contextual Info: ADS62P45, ADS62P44 ADS62P43, ADS62P42 www.ti.com . SLAS561B – JULY 2007 – REVISED MAY 2009 DUAL CHANNEL, 14-BITS, 125/105/80/65 MSPS ADC WITH DDR LVDS/CMOS OUTPUTS

0x2414

Abstract: TAS5711 t0419
Contextual Info: TAS5711 www.ti.com SLOS600A – DECEMBER 2009 – REVISED AUGUST 2010 20-W DIGITAL AUDIO-POWER AMPLIFIER WITH EQ, DRC, AND 2.1 MODE Check for Samples: TAS5711 FEATURES 1 • 2 • • Audio Input/Output – 20-W Into an 8-Ω Load From an 18-V Supply – Wide PVDD Range, From 8 V to 26 V

DAC5687

Abstract: G003 IS-136 TRF370317 ECJ-0VC1H102J S0338-01 TRF370x
Contextual Info: TRF370317 www.ti.com SLWS209B – MARCH 2008 – REVISED JANUARY 2010 0.4-GHz TO 4-GHz QUADRATURE MODULATOR Check for Samples: TRF370317 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • • • • • • 76-dBc Single-Carrier WCDMA ACPR at –8

s0273

Abstract: THS4021 S0282 THS4021CD THS4022 THS4022CD M00320 S0273-0
Contextual Info: THS4021 THS4022 www.ti.com SLOS265C – SEPTEMBER 1999 – REVISED JULY 2007 350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS FEATURES 1 THS4021 D and DGN Package Top View • Ultralow 1.5-nV/√Hz Voltage Noise • High Speed: – 350-MHz Bandwidth (G = 10, –3 dB)

DAC5686

Abstract: DAC5686IPZP IS-136
Contextual Info: DAC5686 www.ti.com . SLWS147F – APRIL 2003 – REVISED JUNE 2009 16-BIT, 500-MSPS, 2x–16× INTERPOLATING DUAL-CHANNEL