G003 Search Results

DS2227

Abstract: DS2227-100 DS2227-120 DS2227-55 DS2227-70 stk power amp OUTPUT-15V
Contextual Info: DALLAS SEMICONDUCTOR CORP 3^E D • 2bl413Q G0034MS ^ ■ DAL DS2227 PRELIM INA R Y DALLAS SEMICONDUCTOR DS2227 Flexible NV SRAM Stik FEATURES PIN DESCRIPTION • Flexibly organized as 128K x 32, 256K x 16, o r5 1 2 K x 8 b its • Data retention >10 years In

EP610 "pin compatible"

Abstract: altera ep610
Contextual Info: bflE D ALTERA CORP • GS^S37B G0033S4 b7fl » A L T EP610A E P LD □ Features □ □ □ Preliminary Information □ □ □ Highest-performance, 16-macrocell Classic EPLD Combinatorial speeds with t PD = 7.5 ns Counter frequencies up to 125 MHz Pipelined data rates up to 142.9 MHz

Contextual Info: 1SE D POUIEREX INC • 72T4bSl mMBtËX G0035 4T Ô ■ CS6 1 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 16 Tentative Single Diode POW-R-BLOK Moduie

Contextual Info: L ALLEGRO MI C R O S Y S T E M S INC =13 » 0SD433Û G0037ÖD IALGR T-91-01 PROCESS BKF Process BKF Schottky Diode P roce ss B K F is a high-speed silicon Schottkybarrier diode. It has a typical breakdown-voltage rat­ ing of 7 0 V and can operate with up to 200 m A of

HJQ-22F

Abstract: 110VDC
Contextual Info: T810S-G003C E L E C T R O N I C S 通 用 继 电 器 HJQ-22F ● 2 to 3 pole configurations 03001008347 ● Conform to RoHS,ELV directive c u s E173485 203664 28x21.5×35 •ORDERING CODE 定购代码 HJQ-22F — 2Z 1 2 P — F — D / 12VDC 3 4 5 6 1.

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • D5GM33Ö G0037S7 3 ■ ALGR T-91-01 P R O C E S S N J26L Process NJ26L N-Channel Junction Field-Effect Transistor Process NJ26L is an N-channel junction fietdeffect transistor designed for general-purpose, lownolse, high-galn applications not requiring high

T3D 75 diode

Abstract: T3D DIODE
Contextual Info: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 SPRAGUE. ^3 D • ÖS13ÖS0 S E M I C O N D S / ICS G003bn 3 ■ 93D 03619 H fö f-O S DIODE CHIPS ‘THD’ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C Id Vbr Device Type THD9751 THD9752 II* Min. V (CtlR (l*A)

Contextual Info: 13 ;SP RA GU E/SEM IC OND GROUP D • flS13û5G G003571 1 ■ 8514 0 19 S P R A G U E , S E M I C O N D S / ICS 93D 03571 J>. 7"*?$ BIPOLAR TRANSISTOR CHIPS PNP Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type DC Current Gain

EPM7160

Abstract: EPM7160 PLCC CN-TC01 H6062
Contextual Info: ALTERA CORP bfiE D • 05^5375 G003253 013 H A L T EPM7160 EPLD Features ^ □ □ □ □ □ High-density, erasable CMOS EPLD based on second-generation MAX architecture 3,200 usable gates Combinatorial speeds with tPD = 12 ns Counter frequencies up to 90.9 MHz

2sc4137

Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638

DS1100

Abstract: burn-in
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: July 31, 2000 Subject: PRODUCT CHANGE NOTICE – G003102 Description: DS1100 Burn-in Elimination.

LM200 lcd

Abstract: lm200 hitachi LM200 240dot ED44
Contextual Info: HITACHI AMERICA/ ELECTRON lbE D • MMTbSOl G003Ô1Ô 0 LM200 ■ 240 dot W x 64 dot (H) graphic and alpha-numeric display IN T E R N A L PIN C O N NECTION ■ Attachable controller LSI: H D 61830 (see page 18). Level Pin No. Symbol Function 1 D1 H /L 2

SCR FIR 3 D

Abstract: TEA 1400 powerex cd4a
Contextual Info: POWEREX INC m N E R 1SE D E • 72T4t.21 G003575 T ^ T - 2 5 '2 .3 X CD4A Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 40 SCR POW-R-BLOK Module

mga64135

Abstract: 1 to 3 GHz bandpass filter wide band rfc 33 gaas fet micro-X Package Transistor 35 MICRO-X 64135 MGA-641 31883
Contextual Info: MGA-64135 GaAs MMIC Application Note G003 Introduction The Hewlett-Packard MGA-64135 GaAs MMIC is a 50 Ω -matched gain block providing broadband operation from 1 to 10 GHz, with performance guaranteed from 2 to 6 GHz. It is housed in an inexpensive metal-ceramic 0.085-inch micro-X surface-mountcompatible package, and requires only a single-polarity power supply.

B857

Abstract: water flow sensor "water Flow Sensor" silicon rectifier gq b859 SKWD7000 U4T DIODE B-857
Contextual Info: S1E D • Û13bb71 G003fiTb Û4T m Z Z K G s e MIKRDN SEMIKRON INC V rsm/V If a v rrm V SKWD 7 0 0 0 /0 2 SKWD 7 0 0 0 /0 4 SKWD 7 0 0 0 /0 6 200 400 600 Symbol Voiw = 4 l/min ; Tw = 40 °C; ED = 100% Voiw = 8 l/min Ifsm Tvj Tvj Tvj Tvj = = = = 40 °C 180°C

hyundai

Abstract: DS2228 DS1246 dallas date code DS1556 On semiconductor date Code ON SEMICONDUCTOR TRACEABILITY DS1248 DS1251 DS1486
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: July 31, 2000 Subject: PRODUCT CHANGE NOTICE – G003104 Description: New Qualified RAM Supplier for 1MEG and 4MEG Modules and SIPSTIK’s Hyundai.

DS2228

Abstract: DS1650 CY62148 CY62148V DS1251 DS1254 DS1557 DS1747 DS2229
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: July 31, 2000 Subject: PRODUCT CHANGE NOTICE – G003103 Description: New Qualified RAM Supplier for 4MEG Modules and SIPSTIK’s - Cypress.

SK200da100d

Contextual Info: S IE D I SEtUKRON Ö13bb71 G0037b0 703 « S E K G s e M IK R D n INC Maximum Ratings Conditions VcEVsus lc = 1 A, V be = - 2 V > OJ I II III CO > VcEV Ie = o VcBO Units Values Symbol 1000 V 1000 V 1000 V 200 A If = - lc D. C. 200 A o II V D. C. o 7 lc V ebo

10.7 mhz ceramic filter

Abstract: AM1C ECG734
Contextual Info: PHILIPS E C G 17E D INC bbS3T5fl G003357 7 ECG734 T-77-05-07 F-M GAIN BLOCK semiconductors The Type ECG 734 F-M G ain Block linear monolithic integrated circuit is designed for use in communications and high fidel­ ity f-m receivers. This device consists of

ECG709

Abstract: 1j45 "product detector" fm modulation and demodulation Transistors LV4 tkd12
Contextual Info: bbSBTHô G003S73 1 • _ ECG709 FM DETECTOR AND LIMITER PHILIPS DESCRIPTION The Type ECG 709 FM Defector and Lim iter is a lin ear monolithic integrated c irc u it designed for use with nominal 8 volt supplies in portable or vehicular operation. The device consists of a three-stage lim iter

ECG109

Abstract: ECG1064 9-12V Pti 60
Contextual Info: PHILIPS E C G INC 17E btS31Sfl G003a7a 2 E C G 1064 TV VIDEO SIGNAL PROCESSING CIRCUIT sem iconductors Quick Reference Data SYMBOL Vcc Gi«-ii VALUE 12 1.57 B 4 ,5 m in. Gii-h 3 .9 UNIT V * M Hz * V ,-, 9 m in. V V ,- , 8 .4 m in. V V ,- , 1 .3 V * VOLTAGE G AIN

ECG105

Contextual Info: PHILIPS E C G INC 17E btiSSiSfi G003fl40 T • Pin Connections Top View — 19.4MAX i m E G m Ü + Vrc g ]B -Ÿ REF Lum inance g jR -Y REF Inp u t B i« c 1* NCË o ] C hrom a D C R ef. B la n k in g c ; In p u t C- « ] R -Y C hrom a 2.54Ô.S±0,12.S4 4.4

ECG1058

Abstract: ECG105
Contextual Info: P H IL IP S 17E E C G INC □[□53120 G003âbM 2 T-74-05-01 ECG1058 4.4 WATT AUDIO POWER AMPLIFIER semiconductors EQ U IV A LEN T CIRCUIT The E C G I058 is a monolithic low noise, high gain and high power audio amplifier designed for a battery opera­ tion (13V . The device consists of a differential preamplifier, a driver amplifier, a ripple filter, an automatic

G8060

Abstract: CM430855
Contextual Info: 15E D POUEREX INC • 7 S emt.21 G0035Ö1 S ■ 7'^<2S'-e2 3 m iVEREX CM430455 CM430855 Powerex, In c., Hillis Street, Youngwood, Pennsylvania 75697 412 925-7272 Powerex Europe, S.A ., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Dual SCR