6E3SB05 Search Results

th 2267

Contextual Info: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)

Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbOS G0273b3 SIEM EN S «SIEG LD273 TWO CHIP INFRARED EMITTER -r=^f-n Package Dimensions in Inches mm Chip Location 024 (0 6) 016{0 4) 5 ft - r ~ 354(9 0» 035 {0 8) 020 (0 5 ) ^ / 1JJ g g 181(461 323 (8 2 ) T ^ -— l

smd transistor hA

Abstract: BTS 131 SMD S5305 SIEMENS BST smd code t04 transistor SMD t04 410D 410E 410F BTS410
Contextual Info: SIEMENS BTS410D PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection v