LD273 Search Results

Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbOS G0273b3 SIEM EN S «SIEG LD273 TWO CHIP INFRARED EMITTER -r=^f-n Package Dimensions in Inches mm Chip Location 024 (0 6) 016{0 4) 5 ft - r ~ 354(9 0» 035 {0 8) 020 (0 5 ) ^ / 1JJ g g 181(461 323 (8 2 ) T ^ -— l

BP104 siemens

Abstract: BP103B equivalent BP103B 100MS BP104 LD273 SIEMENS Phototransistors SO 273 siemens m7ep
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • 8235b05 D0273b3 ^ « S I E G S IE M E N S LD273 TWO CHIP INFRARED EMITTER Package Dimensions in Inches mm Chip Location 197 (5 0) 181 (4 6) 024 (0 6) 016 (0 4) Maximum Ratings FEATURES • Very High Radiant Intensity • TWo Chip Device

SFH317-2

Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
Contextual Info: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2

BP103B

Abstract: IR LD271 LD271 LD273 SFH484 SFH485 S260-C S260C
Contextual Info: SIEMENS BP 103B SILICON NF-. ! PHOTOTRANSISTOR Package Dimensions in Inches mm .448(11.4) 432(11 0) 0 2 4 (6 ) i 0 1 6 (4 ) Surface not flat— \ t 100(2 S4) t 990(25 2) i 0 5 1 (1 3 ) I 039 ( , 0 > I 9 5 1 (2 4 2 ) .169(4 6) 1 65(4 2) 2 3 2 (5 9) 2 1 7 (5 5 )

eprom 2732A

Abstract: 2732A INTEL intel 27c512 eprom 2732A-2 eprom 2716 2732A EPROM 2764a eprom 27c64 PROGRAMMER CIRCUIT 2764 eprom PINOUT INTEL 2764 EPROM
Contextual Info: intei 2732A 32K 4K x 8 UV ERASABLE PROMS 200 ns (2732A-2) Maximum Access Time . . . HMOS*-E Technology Low Current Requirement - 1 0 0 mA Active - 35 mA Standby inteligent I d e n t i f i e r T M Mode -A utom atic Programming Operation Compatible with High-Speed

Contextual Info: SIEMENS BP 103B SILICON NF-. PHOTOTRANSISTOR Package Dimensions in Inches mm . 4 4 9 ( 11 .4 ) 232 (5 9 ) Em ttter 951 (24 2 ) 323 (8 2) FEATURES Maximum Ratings * Silicon NPN Epitaxial Phototransistor * Acceptance Angle, 50° Operating and Storage Temperature Range (Top, Tstg)

2764 memory

Abstract: 2732A-2 2732A-20 27C128 27C256 27C512 27C64 87C64 LD2732A TD2732A
Contextual Info: 2732A 32K 4K x 8 UV ERASABLE PROMS 200 ns (2732A-2) Maximum Access Time . . . HMOS*-E Technology Low Current Requirement - 1 0 0 mA Active - 35 mA Standby inteligent I d e n t i f i e r T M Mode -A utom atic Programming Operation Compatible with High-Speed

1M914

Abstract: 2732A-20 eprom 2732A 2732A INTEL eprom 2716 TD2732A LD2732A order 231369 27C128 INTEL 27C128
Contextual Info: intei 2732A 32K 4K x 8 UV ERASABLE PROMS • 200 ns (2732A-2) Maximum Access Time . . . HMOS*-E Technology ■ Compatible with High-Speed Microcontrollers and Microprocessors . . . Zero WAIT State ■ Low Current Requirement -1 0 0 mA Active - 3 5 mA Standby

EPROM 2764a

Abstract: 2716 intel TD2732A Intel AP-514 eprom 2732A intel 2732A INTEL
Contextual Info: intei 2732A 32K 4K x 8 UV ERASABLE PROMS 200 ns (2732A-2) Maximum Access Time . . . HMOS*-E Technology Low Current Requirement -1 0 0 mA Active - 35 mA Standby Compatible with High-Speed Microcontrollers and Microprocessors . . . Zero WAIT State inteligent Identifier Mode

32768X8

Abstract: 16384x8 qd2764-2 8192X8 QD2732A-20 TD2732A45 QD2732A-30 intel EPROM 27128 4096X8 enhance 168
Contextual Info: in t ^ UV ERASABLE PROIVI FAMILY EXPRESS m 0-70°C Temperature Range Standard • 168±8 Hour Burn<in Available ■ Industry Standard Pinout. . . JEDEC Approved ■ Extended Temperature Range —40°C - +85°C Available * Inspected To 0.1% AQL ■ TWo Line Control

LD271 IR LED

Abstract: flux meter
Contextual Info: SIEMENS BP103B SILICON NPN PHOTOTRANSISTOR Package Dim ensions in Inches mm FEATURES Maxim um R atings • Silico n NPN Epitaxial Phototransistor Operating and Storage Temperature Range (Top, Tstg) .-55° to +100°C Soldering Temperature {i2 mm from case bottom)

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN