410D Search Results
410D Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CFP4-27B4-10D-RX |
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100G CFP4 RX | |||
CFP4-27B4-10D |
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100G CFP4 LR4 | |||
QXP27A4-10D |
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40G QSFP+ LR4 | |||
CFP2-27B4-10D |
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100G CFP2 LR4 | |||
QXP29B4-10DA-3 |
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100G QSFP28 LR4 Single Rate I Temp |
410D Price and Stock
Texas Instruments LMR54410DBVRIC REG BUCK ADJ 1A SOT23-6 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LMR54410DBVR | Reel | 9,000 | 3,000 |
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LMR54410DBVR | 3,000 |
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LMR54410DBVR | 23,370 |
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LMR54410DBVR | 19,870 |
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Monolithic Power Systems MP3410DJ-LF-ZIC REG BOOST ADJ 1.3A TSOT23-5 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MP3410DJ-LF-Z | Digi-Reel | 7,068 | 1 |
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MP3410DJ-LF-Z | Reel | 24 Weeks | 3,000 |
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MP3410DJ-LF-Z | 26 Weeks | 3,000 |
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Vishay Siliconix SIR410DP-T1-GE3MOSFET N-CH 20V 35A PPAK SO-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR410DP-T1-GE3 | Digi-Reel | 4,328 | 1 |
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SIR410DP-T1-GE3 | 3,000 | 1 |
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Texas Instruments TPS62410DRCRIC REG BUCK ADJ 800MA DL 10VSON |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPS62410DRCR | Reel | 3,000 | 3,000 |
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TPS62410DRCR | 3,000 | 3,000 |
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TPS62410DRCR | Cut Tape | 2,979 | 0 Weeks, 1 Days | 1 |
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TPS62410DRCR | 136,980 |
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Texas Instruments TPS5410DIC REG BUCK ADJ 1A 8SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPS5410D | Tube | 1,461 | 1 |
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TPS5410D | 449 |
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TPS5410D | 91 |
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TPS5410D | 36,400 |
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TPS5410D | 31 |
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TPS5410D | 38,128 |
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410D Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) HITACHI ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized |
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HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 | |
Contextual Info: 410D POLYSTYRENE E^p electrocube -.•r WRAP AND FILL, ROUND W 2>i -,—_— ^ T S N. D • I ^ ' y . ^ / T f i y V . ^ .' »* • V*, »‘^r •• - LEAD LENGTH: 2.0” ± .5 0 ” _ MFD D* + .0 5 ” .01 .16 .16 .18 .21 .19 .19 .19 .19 .015 .20 .15 |
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28 pin plastic dip hitachi dimensionContextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) HITACHI ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized |
OCR Scan |
HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 28 pin plastic dip hitachi dimension | |
HN58C256A
Abstract: HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 Hitachi DSA00118
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HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 Hitachi DSA00118 | |
HN58C256AT-85E
Abstract: HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C256AP
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HN58C256A HN58C257A 32-kword HN58C257A) REJ03C0148-0500Z ADE-203-410D 32768-word 64-byte HN58C256AT-85E HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C256AP | |
HN58C256A
Abstract: HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 Hitachi DSA00358
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HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 Hitachi DSA00358 | |
Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) HITACHI ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized |
OCR Scan |
HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 | |
transistor 8606
Abstract: TO46 lens phototransistor OT410D "photo transistor" ic 8606 410D OT410 OT410T TO46 TO46 package
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OT410 OT410D OT410T 410D-6 410D-1 transistor 8606 TO46 lens phototransistor "photo transistor" ic 8606 410D TO46 TO46 package | |
410D
Abstract: BUP 200 Q67040-A4425-A2
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O-220 Q67040-A4425-A2 Dec-12-1996 410D BUP 200 Q67040-A4425-A2 | |
426L1
Abstract: 721L1 409L1 620L1 621L1 412a 432I2 726L1 620-L1 410G2
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410D/D2 410E/E2 410F/F2 432I2 409L1 412B2 432D/D2 432E/E2 432F/F2 410G2 426L1 721L1 409L1 620L1 621L1 412a 726L1 620-L1 | |
Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details 410DCX Product Details Sensors & Protective Relays |
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410DCX 410DCX | |
HN58C256AP-85
Abstract: HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 Hitachi DSA0047
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HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 Hitachi DSA0047 | |
410DC-SXContextual Info: CD CUSTOMER DRAWING SD- 410DC-SX Rev. A TE# 1618083-5 Rev. E |
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410DC-SX | |
Hitachi DSAUTAZ006Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by |
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HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 Hitachi DSAUTAZ006 | |
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Contextual Info: BTS 410D /E/F/G PROFET Preliminary Data • • • • • • • • • • • • • • • • • H igh-side switch S h o rt-c irc u it p ro te ction O vertem perature protection O verload protection Load dum p pro te ction up to 80 V1 Undervoltage and overvoltage shutdow n |
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Contextual Info: 410D Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current220 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0k V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)150 @Temp. (øC) (Test Condition)110# |
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Current220 Voltage200 Current10m | |
DR856
Abstract: K/FND COMMON CATHODE DISPLAY
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TLG346T TLG347T TLS346T TLS347T TLR346T TLR347T TLG346T, TLG347T, TLS347T, DR856 K/FND COMMON CATHODE DISPLAY | |
6 pin TRANSISTOR SMD CODE Z1
Abstract: 410E2 410H BTS410G2 E3062 smd diode code L12
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O-220AB/5 O-220AB/5, E3062 Q67060-S6104-A2 BTS410G2 E3062A E3043 E3043 Q67060-S6104-A3 6 pin TRANSISTOR SMD CODE Z1 410E2 410H smd diode code L12 | |
CLM400D
Abstract: CLM410D LFR20
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CLM400D CLM410D CLM410D lfr-20 25ENT LFR20 | |
Contextual Info: S23SbDS DDflimb t.37 SIEMENS PROFET BTS 410 D2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection Vbb AZ Operating voltage On-state resistance Vfcb(on) • • • • • Overload protection Current limitation |
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S23SbDS BTS410D2 | |
Sony IMX 183
Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
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gk 67Contextual Info: a a a s b o s SIEMENS □ □ eì 2 b S D m s 2 PROFET BTS 308 Smart Highside Power Switch Features • • • • • • • • • • • • • Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Overload protection |
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
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2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 | |
SD 4652
Abstract: bel 187 transistor working MN101C00 display wd
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MN101C00 MN101C00 11430-031E SD 4652 bel 187 transistor working display wd |