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    410D Search Results

    410D Result Highlights (5)

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    CFP4-27B4-10D-RX
    Amphenol Communications Solutions 100G CFP4 RX PDF
    CFP4-27B4-10D
    Amphenol Communications Solutions 100G CFP4 LR4 PDF
    QXP27A4-10D
    Amphenol Communications Solutions 40G QSFP+ LR4 PDF
    CFP2-27B4-10D
    Amphenol Communications Solutions 100G CFP2 LR4 PDF
    QXP29B4-10DA-3
    Amphenol Communications Solutions 100G QSFP28 LR4 Single Rate I Temp PDF
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    410D Price and Stock

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    Texas Instruments LMR54410DBVR

    IC REG BUCK ADJ 1A SOT23-6
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    DigiKey LMR54410DBVR Reel 9,000 3,000
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    Win Source Electronics LMR54410DBVR 19,870
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    Monolithic Power Systems MP3410DJ-LF-Z

    IC REG BOOST ADJ 1.3A TSOT23-5
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    DigiKey () MP3410DJ-LF-Z Digi-Reel 7,068 1
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    MP3410DJ-LF-Z Cut Tape 7,068 1
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    MP3410DJ-LF-Z Reel 3,000 3,000
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    Avnet Americas MP3410DJ-LF-Z Reel 24 Weeks 3,000
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    Vishay Siliconix SIR410DP-T1-GE3

    MOSFET N-CH 20V 35A PPAK SO-8
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    DigiKey () SIR410DP-T1-GE3 Digi-Reel 4,328 1
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    SIR410DP-T1-GE3 Cut Tape 4,328 1
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    SIR410DP-T1-GE3 Reel 3,000 3,000
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    New Advantage Corporation SIR410DP-T1-GE3 3,000 1
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    Texas Instruments TPS62410DRCR

    IC REG BUCK ADJ 800MA DL 10VSON
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    Chip One Stop TPS62410DRCR Cut Tape 2,979 0 Weeks, 1 Days 1
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    Chip Stock TPS62410DRCR 136,980
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    Texas Instruments TPS5410D

    IC REG BUCK ADJ 1A 8SOIC
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    DigiKey TPS5410D Tube 1,461 1
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    Win Source Electronics TPS5410D 38,128
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    410D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) HITACHI ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized


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    HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 PDF

    Contextual Info: 410D POLYSTYRENE E^p electrocube -.•r WRAP AND FILL, ROUND W 2>i -,—_— ^ T S N. D • I ^ ' y . ^ / T f i y V . ^ .' »* • V*, »‘^r •• - LEAD LENGTH: 2.0” ± .5 0 ” _ MFD D* + .0 5 ” .01 .16 .16 .18 .21 .19 .19 .19 .19 .015 .20 .15


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    PDF

    28 pin plastic dip hitachi dimension

    Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) HITACHI ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized


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    HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 28 pin plastic dip hitachi dimension PDF

    HN58C256A

    Abstract: HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 Hitachi DSA00118
    Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by


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    HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 Hitachi DSA00118 PDF

    HN58C256AT-85E

    Abstract: HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C256AP
    Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) REJ03C0148-0500Z (Previous ADE-203-410D (Z) Rev. 4.0) Rev. 5.00 Nov. 17. 2003 Description Renesas Technology's HN58C256A and HN58C257A are electrically erasable and programmable ROMs


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    HN58C256A HN58C257A 32-kword HN58C257A) REJ03C0148-0500Z ADE-203-410D 32768-word 64-byte HN58C256AT-85E HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C256AP PDF

    HN58C256A

    Abstract: HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 Hitachi DSA00358
    Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by


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    HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 Hitachi DSA00358 PDF

    Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) HITACHI ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized


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    HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 PDF

    transistor 8606

    Abstract: TO46 lens phototransistor OT410D "photo transistor" ic 8606 410D OT410 OT410T TO46 TO46 package
    Contextual Info: NPN Silicon Phototransistor Type OT 410D and OT 410T The OT410 sensors consist of a high gain NPN silicon photo transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The 410D features a domed


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    OT410 OT410D OT410T 410D-6 410D-1 transistor 8606 TO46 lens phototransistor "photo transistor" ic 8606 410D TO46 TO46 package PDF

    410D

    Abstract: BUP 200 Q67040-A4425-A2
    Contextual Info: BUP 410D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Pin 3 C E Type VCE IC Package Ordering Code BUP 410D 600V


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    O-220 Q67040-A4425-A2 Dec-12-1996 410D BUP 200 Q67040-A4425-A2 PDF

    426L1

    Abstract: 721L1 409L1 620L1 621L1 412a 432I2 726L1 620-L1 410G2
    Contextual Info: 4. Options Overview All versions: High-side switch, input protection, ESD protection, reverse battery protection monolithic devices with 150 Ω in GND connection Type 307 308 412A 413A 412B 410D/D2 410E/E2 410F/F2 410G 410H 432I2 409L1 707 412B2 432D/D2 432E/E2 432F/F2 410G2 410H2


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    410D/D2 410E/E2 410F/F2 432I2 409L1 412B2 432D/D2 432E/E2 432F/F2 410G2 426L1 721L1 409L1 620L1 621L1 412a 726L1 620-L1 PDF

    Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details 410DCX Product Details Sensors & Protective Relays


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    410DCX 410DCX PDF

    HN58C256AP-85

    Abstract: HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 Hitachi DSA0047
    Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by


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    HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 Hitachi DSA0047 PDF

    410DC-SX

    Contextual Info: CD CUSTOMER DRAWING SD- 410DC-SX Rev. A TE# 1618083-5 Rev. E


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    410DC-SX PDF

    Hitachi DSAUTAZ006

    Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by


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    HN58C256A HN58C257A 32-kword HN58C257A) ADE-203-410D 32768-word 64-byte ns/100 Hitachi DSAUTAZ006 PDF

    Contextual Info: BTS 410D /E/F/G PROFET Preliminary Data • • • • • • • • • • • • • • • • • H igh-side switch S h o rt-c irc u it p ro te ction O vertem perature protection O verload protection Load dum p pro te ction up to 80 V1 Undervoltage and overvoltage shutdow n


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    PDF

    Contextual Info: 410D Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current220 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0k V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)150 @Temp. (øC) (Test Condition)110#


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    Current220 Voltage200 Current10m PDF

    DR856

    Abstract: K/FND COMMON CATHODE DISPLAY
    Contextual Info: TOSHIBA TLG346T,TLG347T,TLS346T.TLS347T.TLR346T,TLR347T TOSHIBA LED DISPLAY TLG346T, TLG347T, TLS346T TLS347T, TLR346T, TLR347T • 10mm 0.4” Character Height Numerical Display. • Application : Numerical Readout for Instrument and Consumer Product. •


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    TLG346T TLG347T TLS346T TLS347T TLR346T TLR347T TLG346T, TLG347T, TLS347T, DR856 K/FND COMMON CATHODE DISPLAY PDF

    6 pin TRANSISTOR SMD CODE Z1

    Abstract: 410E2 410H BTS410G2 E3062 smd diode code L12
    Contextual Info: PROFET BTS 410 G2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short circuit protection • Thermal shutdown


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    O-220AB/5 O-220AB/5, E3062 Q67060-S6104-A2 BTS410G2 E3062A E3043 E3043 Q67060-S6104-A3 6 pin TRANSISTOR SMD CODE Z1 410E2 410H smd diode code L12 PDF

    CLM400D

    Abstract: CLM410D LFR20
    Contextual Info: CLM400D 410D LEDIsolated Dual P hotoconductors Isolators .0 5 0 REF. The CLM400D and 410D incorporate an LED with tw o p h o to co n d u c tiv e cells to provide a dual optoisolator with isolated outputs. The presence of iso­ lated output elem ents allows one of the sensors to be


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    CLM400D CLM410D CLM410D lfr-20 25ENT LFR20 PDF

    Contextual Info: S23SbDS DDflimb t.37 SIEMENS PROFET BTS 410 D2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection Vbb AZ Operating voltage On-state resistance Vfcb(on) • • • • • Overload protection Current limitation


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    S23SbDS BTS410D2 PDF

    Sony IMX 183

    Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
    Contextual Info: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1


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    PDF

    gk 67

    Contextual Info: a a a s b o s SIEMENS □ □ eì 2 b S D m s 2 PROFET BTS 308 Smart Highside Power Switch Features • • • • • • • • • • • • • Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Overload protection


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    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


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    2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    SD 4652

    Abstract: bel 187 transistor working MN101C00 display wd
    Contextual Info: MICROCOMPUTER MN101C00 MN101C00 Series C Source Code Debugger User’s Manual Pub.No.11430-031E MS-DOS and Eindows are registered trademarks of Microsoft Incorporated. PanaX Series is a trademark of Matsushita Electric Industrial Co., Ltd. PC/AT is a registered trademark of International Business Machine Incorporated.


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    MN101C00 MN101C00 11430-031E SD 4652 bel 187 transistor working display wd PDF