BPW37 Search Results

L14Gl

Abstract: L14F
Contextual Info: OPTOELECTRONICS HERMETIC SILICON INFRARED PHOTOSENSORS Metal Can Convex Lens R e c e p tio n A n g le @ 1/2 P o w e r b v c e o • C E O /V c e n A /(V ) m ax m in m ax u n its (V ) m in ±10° 6.00 - mA 45 100/10 BPW37 ±10° 3.00 - mA 45 100/10 1 L14G1

ST1254

Abstract: ST-125-4 BFW36
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR 6PT8 E lECTBOH t CS BPW36/BPW37 The BFW36/37 are silicon phototransisters mounted in narrow angle TO-18 packages. o SYMBOL A 80 »0 #0, e e. h i K i. » INCHES MIN. MAX .226 .255 .016 .021 .209 .230 .J?8 .196 .100 MOM .QSC MOM

Contextual Info: 01E 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications_ Light Detector 4302571 G02727M 37E D H A RR IS SEillCOND S E CT OR 19812 1 • HAS 7 ^ 4 / - < £ / Planar Silicon Photo Transistor BPW36, BPW37 T he G E Solid S tate BPW 36 and BPW 37 are highly sensitive N P N P lan ar Silicon Phototransistors.

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS BPW36/BPW37 PACKAGE DIMENSION. The B P W 36/37 are silicon phototransisters m ounted in narrow angle TO -18 packages. FEATURI SYMBOL A <ßD, e 1 h j k L a INCHES MIN. MAX. .225 .255 .016 .021 .209 .230 .178

"pro electron"

Contextual Info: [•o HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS BPW36/BPW37 PACKAGE DIMENSIONS The BPW36/37 are silicon phototransisters m ounted in narrow angle TO-18 packages. 9 A fc < FEATURES SYMBOL A (¿D INCHES MILLIMETERS MIN. MAX. MIN. MAX. .225 .255 5.71

BPW36

Abstract: BPW37 CQX14
Contextual Info: BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR PACKAGE DIMENSIONS FEATURES • Hermetically sealed package • Narrow reception angle • European “Pro Electron” registered 0.209 5.31 0.184 (4.67) DESCRIPTION 0.030 (0.76) NOM 0.255 (6.48) • The BPW36/37 are silicon phototransistors

Contextual Info: European "Pro Electron” Registered Types BPW36, BPW37 Light Detector Planar Silicon Phototransistor V y T h e B FW 36 a n d B PW 37 a r e h ig h ly se n sitiv e N PN p la n a r silic o n p h o to tr a n s is to rs . T h e y a re h o u s e d in a T O - 18 style h e rm e tic a lly s e a le d p a c k a g e w ith le n s c ap . T h e s e d e v ic es a re

transistor npn 4-071

Abstract: BPW37 ic or 4071 transistor 336 cms BPW36 CQX14 GE solid state BPW3
Contextual Info: SOL I» oí ST AT E Optoelectronic Specifications Light Detector dF§3ö7SDöi aDnñia | =p s/ $s Planar Silicon Photo Transistor BPW36, BPW37 The GE Solid Slate BPW36 and BPW37 are highly sensitive NPN Planar Silicon Phototransistors. They are housed in a TO-18 style hermetically sealed package with lens cap. These devices are ideal

BPW37

Abstract: BPW36 CQX14 ST1333 ST1607
Contextual Info: [sO HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS BPW36/BPW37 PACKAGE DIMENSIONS DESCRIPTION The BPW36/37 are silicon phototransisters mounted in narrow angle TO-18 packages. FEATURES SYM B O L IN C H ES M ILLIM ETERS MIN. MAX. MIN. MAX. 6.47 A .225 .255

Contextual Info: European “Pro Electron” Registered Types _ BPW36, BPW37 Light Detector Planar Silicon Phototransistor a b s o lu te m a x im u m ratings: 25°c.unless Otherwise PLANE T h e BPW36 a n d BPW37 are highly sensitive NPN p la n a r silicon ph o to tran sisto rs. T hey

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor
Contextual Info: Optoelectronics Hermetic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type TO-18 Detector Package (Convex Lens) BPW36 5 0.5 940 GaAs 1.00 – 30 100 Phototransistor

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Phototransistor L14F1

Abstract: Phototransistor L14F L14F1 phototransistor L14G1 phototransistor L14G3 phototransistor L14G2 Phototransistor L14G3 phototransistor 650 nm lens emitter phototransistor Infrared phototransistor TO18
Contextual Info: Hermetic Silicon Photosensors TO-18 Detector Package Convex Lens 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 0.50 (12.7) MIN 0.020 (0.51) 3X Base 0.100 (2.54) 0.050 (1.27) Emitter Part VCE Number (V) Test Conditions Ee ␭p (mW/cm2) (nm) IC (ON)

MOC5010

Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
Contextual Info: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

Contextual Info: OPTOELECTRONICS HOW TQ USE T H E IN FR A R ED IR SE C TIO N This section provides you with the physical dimensions, part numbers and operating characteristics for infrared (IR) components. The folllowing is a sample layout with descriptions of the information provided, including definitions of specifications on the opposite page.

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

L14F

Contextual Info: [* q OPTOELECTRONICS M e ta l C a n C onvex Lens .230 5 64 .209(5 31) ^ r HERMETIC SILICON INFRARED PHOTOSENSORS P a rt Num ber .195(4.95) 178(4.52) ' II > II 1! i II B V ceo •C E 0 / V CE (V ) m ax u nits mm (nA )/(V) m ax N o tes - m A 45 100/10 1 m A

M0C3011

Abstract: H74AI h11m BPW3 H1IJ H11M4 photo darlington L14F2 HIIAAI M0C3010 MC726
Contextual Info: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS j ß /> * ff /' //* * ,y / TYPE NO. PAGE NO. MIN. PQ @ lF = 100mA MAX. VF@ lp= 100«iA PEAK EMISSION WAVELENGTH TYP. n METERS RISE TIME TYP. mSEC FALL TIME TYP./zSEC MAX. PD mW MAX. If CONT.

MOC3Q11

Abstract: h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4
Contextual Info: Quick-Reference Product Guide HARRIS OPTOELECTRONIC Devices Index to Types Type No. ' 4 Page No. Type No. Page No. IN6264 IN6265 IN 6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196 196 196 198 198 F5F1 F5G1 GE3009 GE3010 GE3011 GE3Ô12 GE3020

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

CNY17 III

Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
Contextual Info: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196