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Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING /fth X. FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MILUMETERS MAX. MIN. NOTES Mechanically and wavelength matched to TO-18
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Contextual Info: 3 87 5081 G E SOLID 01E STATE Optoelectronic Specifications_ 19816 - HARRIS SEMICOND SECTOR 37E D I D T- '//: / / •43GE571 0027270 T ■ HAS Infrared Emitter CQX14, CQX15, CQX16, CQX17 G alliu m Arsenide In fra re d -E m ittin g Diode
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M0C3022
Abstract: M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482
Contextual Info: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS TYPE NO. y & 54A S Ä j f # / 54 / JV V / jL & s /s s /^ s ^ 1 N 6 26 4 1N 6 26 S 1 N6266 CQ X 1 4 CQ X1 5 CQX16 CQ X1 7 FSD1 FSD 2 FSD3 F5E1 FSE2 F5E3 F5F1 F5G1 IE D 5 5 C L ED S5 B LED56 L ED SSC F
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n6266cqx16led56led56f+14h23a1h23a2h23b1h23l1m0c3022m0c3021m0c3023h22lbpw 56 photoh11fih74aih11m421abh2482
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Contextual Info: European “Pro Electron” Registered Types _ CQX14, CQX15, CQX16, CQX17 Infrared Emitter GaAs Infrared Emitting Diode T h e CQX14, CQX15, CQX16, CQX 17 series are gallium arsenide, light em itting diodes w hich em it n o n -co h eren t, in fra re d energy with a p eak wave
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QRB1134
Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6
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Contextual Info: European “Pro Electron” Registered Types _ CQX14, CQX15, CQX16, CQX17 Infrared Emitter GaAs Infrared Emitting Diode The CQX14, CQX15, C.QX16, CQXI7 series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy with a peak wave
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st12
Abstract: CQX14 CQX16 ST1332
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MAX. MILLIMETERS MIN. .255
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cqx14cqx16st1332cqx14/16+7940nmst1271st1276st1272st1275st1273st12
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Diode FAJ 45
Abstract: Diode FAJ package
Contextual Info: 1 * GaAs INFRARED EMITTING DIODE IFTIELECTlllltS CQX14, CQX16 The CQX14/16 are 940nm LHDs in narrow angle, TQ-46 packages. SÊAHNÛ ST1332 N Good optica! to mechanical alignment SYMBOL INCHES MiN ' MAX. A 0b «>0 «•0, e * h i k L « .01« 209 255 .021 .230
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cqx14cqx16cqx14/16940nm+5tq-46st133270mwadiode faj 45diode faj package
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cqx 87
Abstract: CQX14 CQX15 CQX16 CQX17 "GE Solid state" CQX 13
Contextual Info: G E SOLID STATE 01 DE 3fl750fll Qdllülb t. I Optoelectronic Specifications T 'H /gS — Infrared Emitter CQX14, CQX15, CQX16, CQX17 Gallium Arsenide Infrared-Emitting Diode The GE Solid State CQX14-CQXI5-CQX16-CQXI7 series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy with a peak wave
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3fl750fllcqx14cqx15cqx16+9cqx17cqx14-cqx15-cqx16-cqx17of940ato-18-000mm778mmcqx 87ge solid statecqx 13
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ST1332
Abstract: A 3202 DIODE
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS ' The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING PLANE FEATURES ST1332 • Good optical to mechanical alignment SYMBOL INCHES MIN. A MILLIMETERS MAX, MIN. .255
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cqx14cqx16cqx14/16940nm+4st1332st1604100ma1a 3202 diode
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Contextual Info: [*13 GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING FEATURES • Good optical to mechanical alignment SYMBOL INCHES MIN. MILLIMETERS MAX. A MIN.
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CQX14
Abstract: CQX16
Contextual Info: CQX14, CQX16 GaAs INFRARED EMITTING DIODE DESCRIPTION PACKAGE DIMENSIONS 0.209 5.31 The CQX14/16 are 940 nm LEDs in a 0.184 (4.67) narrow angle, TO-46 packages. 0.030 (0.76) NOM 0.255 (6.48) FEATURES • Good optical to mechanical alignment 1.00 (25.4) MIN
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ORB1134
Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Contextual Info: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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MOC5010
Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
Contextual Info: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t
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TIL145
Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
Contextual Info: Quick-Reference Product Guide Industry Replacement Guide T h e sug g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts fo r th e p ro d u c ts listed. H a r r is assum es n o re sp o n s ib ilit v a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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LED55B
Abstract: LED55C LED56
Contextual Info: Hermetic Light Emitting Diodes TO-46 Diode Package Convex Lens 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) Part Number 5 PO @ 100 mA IF VF @ 100 mA IF (mW) (V) min max max IR @ 3 V VR (µA)
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Contextual Info: so OPTOELECTRONICS HERMETIC INFRARED LIGHT EMITTING DIODES p , fc m ts s m r M etai C a n C o n ve x Le n s P .» * ; N u m b i.r A : i 4i I I: '•'V if □ u i« s u t P ’ ^2 P o w i ï i .Titr, m ;¡* 'J 1 i rrt A ¡ UHU'!:. ’ íl ¡i * !q V R ■1.1 A ¡ / ¡ V >
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L14F1 phototransistor datasheet
Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions
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se-171l14f1 phototransistor datasheetl14f1 ir phototransistorpin configuration of l14f1+7l14f1 phototransistorphototransistor l14f1mexico transmissive sensorl14f1 phototransistor dataopto transistor moccqx 89phototransistor l14g3
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M0C3011
Abstract: H74AI h11m BPW3 H1IJ H11M4 photo darlington L14F2 HIIAAI M0C3010 MC726
Contextual Info: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS j ß /> * ff /' //* * ,y / TYPE NO. PAGE NO. MIN. PQ @ lF = 100mA MAX. VF@ lp= 100«iA PEAK EMISSION WAVELENGTH TYP. n METERS RISE TIME TYP. mSEC FALL TIME TYP./zSEC MAX. PD mW MAX. If CONT.
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CNY17 III
Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
Contextual Info: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196
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ir diode 940 nm
Abstract: LED55B LED56 LED55C LED56F 1N6264 1N6265 CQX14 CQX15 CQX16
Contextual Info: Optoelectronics Hermetic Light Emitting Diodes Part Number PO @ 100 mA IF mW min max VF @ 100 mA IF (V) max IR @ 3 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp TO-46 Diode Package (Convex Lens) 1N6264 6.00 – 1.7 10 16 940
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E17G
Abstract: g31 m7 te Y8310 19c13 Am29C327
Contextual Info: Am29C327 Double-Precision Floating-Point Processor FINAL DISTIN CTIVE CHARACTERISTICS • • • • • H ig h -p e rfo rm a n ce d o u b le -p re c is io n flo a tin g -p o in t processor Comprehensive floating-point and integer instruction sets Single VLSI device performs single-, double-, and
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