LED56 Search Results

L14F1 PHOTOTRANSISTOR

Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW

ST1604

Abstract: LED55B LED56 MA171 st1332 LED55C
Contextual Info: so GaAs INFRARED EMITTING DIODE OPTOELECTRONICS LED55B/C, LED56 PACKAGE DIMENSIONS DESCRIPTION The LED55B/C and LED56 are 940nm LEDs in a narrow angle, TO-46 package. S E A T IN G FEATURES ST1332 SYM BOL IN C H E S MIN. A MAX. M ILL IM E T E R S MIN. .255

Contextual Info: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode

M0C3022

Abstract: M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482
Contextual Info: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS TYPE NO. y & 54A S Ä j f # / 54 / JV V / jL & s /s s /^ s ^ 1 N 6 26 4 1N 6 26 S 1 N6266 CQ X 1 4 CQ X1 5 CQX16 CQ X1 7 FSD1 FSD 2 FSD3 F5E1 FSE2 F5E3 F5F1 F5G1 IE D 5 5 C L ED S5 B LED56 L ED SSC F

LED56F

Abstract: phototransistor 940nm
Contextual Info: G aA s INFRARED EMITTING DIODE DPTOELECÏBOIIICS LED55BF/CF, LED56F PACKAGE DIMENSIONS DESCRIPTION The LED55BF/CF and LED56F are 940nm LEDs in a wide angle, TO-46 package. SEATING 3 FEATURES Good optical to mechanical alignment SYMBOL INCHES MIN. A MILLIMFTERS

LED565-66-60

Contextual Info: LED565-66-60 TECHNICAL DATA High Power LED Array, 60 chips GaP LED565-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency GaP diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with double coated clear silicone and epoxy resin.

OF LED 55B

Abstract: LED55B LED55C LED56 LED56F 55BF ge 55b NMTC LED55BF LED55CF
Contextual Info: Optoelectronic Specifications Infrared Emitter LED55B, LED55C,LED56, LED55BF, LED55CF, LED56F Gallium Arsenide Infrared-Em itting Diode The GE Solid State LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes which emit non-coherent, infrared energy with a peak wave length of

2N5777

Abstract: L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

PHOTO DIODE LED55C

Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

LED56F

Abstract: LED55BF LED55CF ST1331
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS LED55BF/CF, LED56F PACKAGE DIMENSIONS DESCRIPTION The LED55BF/CF and LED56F are 940nm LEDs in a wide angle, TO-46 package. SEATING FEATURES ST1331 • Good optical to mechanical alignment SYMBOL INCHES MIN. A MILLIMETERS

photo transistor 2n5777

Abstract: L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F FALL RISE M AX. M IN . M A X . PEAK EM ISSION W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M ETER S TYP. n. SEC. T Y P . n. SEC. mW 5.4mW

LED56F

Abstract: Infrared phototransistor TO18
Contextual Info: GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) ANODE (Connected To Case) 3 3 Ø0.020 (0.51) 2X

LED55B

Abstract: LED55C LED56
Contextual Info: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected

st1053

Abstract: LED55B LED56 LED55C ST105 ST1054
Contextual Info: EU GaAs INFRARED EMITTING DIODE IFTDELEE11IM5 LED55B/C, LEP56 PACKAGE DIMENSIONS SEATING PLANE DESCRIPTION The LED55B/C and LED56 are 940nm LEDs in a narrow angie, TO-46 package. FEATURES S T 1332 * Good optical to mechanical alignment SYMBOL A 40 ¿D, 8 e,

2n5777 phototransistor

Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

ssl55c

Abstract: photo transistor 2n5777 2N5779 PHOTO DIODE LED55C LED56F L14F1 LED56 LED55C H74A1 LED55B
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

LED55C

Abstract: LED55B LED56 fairchild make INFRARED EMITTING DIODE TO18 INFRARED EMITTING DIODE TO18 LED55B/LED55C/LED56
Contextual Info: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected

LED56F

Abstract: fairchild make INFRARED EMITTING DIODE TO18 LED55BF LED55CF
Contextual Info: GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) ANODE (Connected To Case) 3 3 Ø0.020 (0.51) 2X

H15A1

Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

Contextual Info: LED565/660-04A TECHNICAL DATA Dual LED, 5 mm package GaP, DDH AlGaAs LED565/660-04A is a bi-color LED, containing a GaP 565 nm and DDH AlGaAs (660 nm) LED chip die, which are mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a power radiation of typical 0.2 mW and 4.0 mW at peak wavelengths of

LED55B

Abstract: LED55C LED56 Infrared phototransistor TO18
Contextual Info: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected

55BF

Abstract: led55b LED55B-LED55C-LED56 LED55C LED56 LED56F LED 55B 55cf OF LED 55B
Contextual Info: Emitter Specifications LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F Infrared Emitter Gallium Arsenide Infrared Emitting Diode T h e LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes w hich em it n o n -co h eren t, in fra re d energy with a p eak wave

LED55B

Abstract: LED56
Contextual Info: [O P T*O E L E CQ TRONICS GaAs INFRARED EMITTING DIODE LED55B/C, LED56 PACKAGE DIMENSIONS DESCRIPTION The LED55B/C and LED56 are 940nm LEDs in a narrow angle, TO-46 package. S E A T IN G I I FEATURES ST1332 Good optical to mechanical alignment SYMBOL A éb

2N5777 equivalent

Abstract: transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent L14G2 color sensitive PHOTO TRANSISTOR
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW