KSH15A10B
Contextual Info: SBD T y p e : KSH15A H15A10B OULINE DRAWING FEATURES * Similar to TO-247AC TO-3P Case * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Current Capability * Tj=150°C operation Maximum Ratings Approx Net Weight: 5.55g Rating Repetitive Peak Reverse Voltage
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ksh15a10bo-247ac |
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KSH15A10
Contextual Info: SBD T y p e : KSH15A H15A10 OULINE DRAWING FEATURES * Similar to TO-247AC TO-3P Case * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Current Capability * Tj=150°C operation Maximum Ratings Approx Net Weight: 5.5g Rating Repetitive Peak Reverse Voltage
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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c 337 25
Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3
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c 337 25sc160dtic 2160 triacv130he150+6general electric scr c220es54494533 gem2n4401 2n3904 2222a1n21es5451
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L14F1 PHOTOTRANSISTOR
Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g2l14f1 phototransistor2n5777 phototransistorphototransistor l14f1h11a1-h11a24n26 opto isolatorl14f1l14f1 npn photo transistorl14h2h11a2h15a1
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BZ-7RQ18T
Contextual Info: CATALOG MICRO SWITCH FREEPO RT I L L I N O I S . U . S. A A OF D IV IS IO N BZ-7RQ18T SWITCH - BASIC HO N EYW ELL LISTING PCD. M FG. CODE SLOT IN HEX NUT TO CLEAR ROLLER .030 MAX PRETRAVEL oo — .5 0 01 A X .19 WIDE SINTERED 5 STAINLESS STEEL ROLLER - - 1 5 / 3 2 - 3 2 NS THREAD TO WITHIN
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bz-7rq18tls935t-0co-82133c09334g+6-l96-5a-12548clvac1/8hp-1251/4hp-2501/2a-125
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B82791-H15-A16
Abstract: transistor A16 B82791-G15-A16 B82791-G15-A14 B82791-H15-A25 H15-A16 B82791-G15 B82791-G15-A17 B82791-H15 B82791H15A25
Contextual Info: Chokes for Data and Signal Lines B82791-G15 Double Chokes B82791-H15 Rated voltage 42 Vac/80 Vdc Rated current 100 mA Rated inductance 2,2 to 38 mH Construction • Current-compensated ring core double choke with ferrite core ■ Plastic case Features ■ Vertical or horizontal version
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b82791-g15b82791-h15vac/80b82791-h15-a16+7b82791-h15-a25b82791-g15-a17b82791-g15-a16b82791-g15-a14transistor a16h15-a16b82791h15a25
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2N5777
Abstract: L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g22n5777l14g2 application note2n57782n57792n5780l14h4l9b sotphoto transistor 2n5777h11a2h11a3
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PHOTO DIODE LED55C
Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+11led55cfled55bfled56fl14g1l14g2photo diode led55cssl55cphoto transistor l14f1ssl55bssl55cfdirect replacement for ssl55c
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LM1011N
Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44
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ecg10ecg11ecg12ecg13+16ecg14ecg15ecg16ecg17ecg18ecg19lm1011njrc386dx0238ceua78gkcm51725lmj13005an6677ha11749mn8303sn76131n
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TIL145
Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
Contextual Info: Quick-Reference Product Guide Industry Replacement Guide T h e sug g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts fo r th e p ro d u c ts listed. H a r r is assum es n o re sp o n s ib ilit v a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t
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1n62641n62651n6266h21a1+12h21b1h22a2til145ge h11atil31atil33amoc7811til81til99til903-2c3012til34a
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jrc386d
Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Contextual Info: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50
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ecg10ecg11ecg12ecg13+16ecg14ecg15ecg16ecg17ecg18ecg19jrc386dsn76131nlm1011nne545bha1457wx0238ceupc1018cua78gkcmj13005mn8303
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2N5779
Abstract: L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FA LL R IS E M AX. M IN . M A X . P E A K E M IS S IO N W A V ELEN G TH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A lp = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . mW PAGE M A X . Ip CO NT.
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g22n5779l14h4photo transistor 2n5777l14f1 photo transistor2n5777h15a1photo transistor l14f12n5780opto 4n254n35 1327
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photo transistor 2n5777
Abstract: L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F FALL RISE M AX. M IN . M A X . PEAK EM ISSION W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M ETER S TYP. n. SEC. T Y P . n. SEC. mW 5.4mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g2photo transistor 2n5777l14f1 npn photo transistor2n5777h11 bulb2n5777 l14f12n57782 leads photo transistor 2n5777photo transistor 2n57782n5777-80photo transistor l14f1
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opto isolator 4n35
Abstract: GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 LED55B L14G1 phototransistor
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A l p = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . m W PAGE M A X . Ip CONT.
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100maled55cled55bled56+14led55cfled55bfled56fl14g1l14g2opto isolator 4n35ge 4n35l14f1 ir phototransistorl14f1 npn photo transistor537 opto isolatorl14f1 phototransistor4n35-37l14h4l14g1 phototransistor
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2n5777 phototransistor
Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+14led55cfled55bfled56fl14g1l14g22n5777 phototransistorl14f1 phototransistor2n5779phototransistor l14f1l14f1 npn photo transistorphoto transistor l14f1l14g3 phototransistornpn photo transistorh11a2
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ssl55c
Abstract: photo transistor 2n5777 2N5779 PHOTO DIODE LED55C LED56F L14F1 LED56 LED55C H74A1 LED55B
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+11led55cfled55bfled56fl14g1l14g2ssl55cphoto transistor 2n57772n5779photo diode led55cl14f1h74a1
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H15A1
Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+14led55cfled55bfled56fl14g1l14g2h15a1h15a1 optol14f1 npn photo transistorh15a2l14f1 phototransistorge h15a1photo transistor l14f1opto h15a2l14f2
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B82791-G15-A16
Abstract: B82791-H15-A16 B82791-G15 B82791-G15-A14 B82791-H15 B82791-H15-A25 B82791-G14-A16 FERRITKERN B82791H15A25
Contextual Info: Drosseln für Signal- und Datenleitungen Zweifachdrosseln B82791-G15 B82791-H15 Nennspannung 42 V~/80 V– Nennstrom 0,1 A Nenninduktivität 2,2 bis 38 mH Aufbau ● Stromkompensierte Ringkern-Zweifachdrossel mit Ferritkern ● Eingebaut in Kunststoffbecher
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b82791-g15b82791-h15b82791-g14-a12b82791-g14-a16+9b82791-g14-a17b82791-g14b82791-g14-b82791-g15-a16b82791-h15-a16b82791-g15-a14b82791-h15-a25ferritkernb82791h15a25
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2N5777 equivalent
Abstract: transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent L14G2 color sensitive PHOTO TRANSISTOR
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+14led55cfled55bfled56fl14g1l14g22n5777 equivalenttransistor l14g2l14g3l14g1-l14g2-l14g3l14g1 equivalentl14g2 general electrich11 bulbl14g3 equivalentcolor sensitive photo transistor
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L14F1 npn photo transistor
Abstract: 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g2l14f1 npn photo transistor4n26 opto isolator4n27 opto isolatorl14f1 phototransistor4n25-4n26-4n274n25-4n26-4n27-4n282n57772n5780transistor 531ge 4n25
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L14H2
Abstract: L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FA LL RISE MAX. MIN. MAX. PEA K EMISSION W AVELEN G TH TIME TIME Vp @ Pd PO@ lp=100mA lp= 100mA TYP. n. M ETER S TYP. n. SEC. T YP . n. SEC . mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g2l14h2l14h1l14f1 npn photo transistorl14h4aa 4n35h11 bulb2n5777l14f2 photo transistorl14f1h11a3
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L14F1 npn photo transistor
Abstract: transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g2l14f1 npn photo transistortransistor l14f12n5777 equivalentge l14f1l14f1 photo transistorphoto transistor l14f1l14f1l14f1-l14f2of transistor l14f1circuit using l14f1
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L14F1 phototransistor
Abstract: L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator LED55B 2N5777 A3-H11 2N5778 L14G3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+14led55cfled55bfled56fl14g1l14g2l14f1 phototransistorl14f1 npn photo transistort1 l14f1 transistor2n5777 phototransistor340 opto isolator2n5777a3-h112n5778l14g3
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