L14F1 PHOTOTRANSISTOR
Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g2l14f1 phototransistor2n5777 phototransistorphototransistor l14f1h11a1-h11a24n26 opto isolatorl14f1l14f1 npn photo transistorl14h2h11a2h15a1
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ST1604
Abstract: LED55B LED56 MA171 st1332 LED55C
Contextual Info: so GaAs INFRARED EMITTING DIODE OPTOELECTRONICS LED55B/C, LED56 PACKAGE DIMENSIONS DESCRIPTION The LED55B/C and LED56 are 940nm LEDs in a narrow angle, TO-46 package. S E A T IN G FEATURES ST1332 SYM BOL IN C H E S MIN. A MAX. M ILL IM E T E R S MIN. .255
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led55b/cled56st1332940nm+5led55b100maled55cst1604ma171
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Contextual Info: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode
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led55bled55cled56led55bf+3led55cfled56fled55b-led55c-led56
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LED56F
Abstract: phototransistor 940nm
Contextual Info: G aA s INFRARED EMITTING DIODE DPTOELECÏBOIIICS LED55BF/CF, LED56F PACKAGE DIMENSIONS DESCRIPTION The LED55BF/CF and LED56F are 940nm LEDs in a wide angle, TO-46 package. SEATING 3 FEATURES Good optical to mechanical alignment SYMBOL INCHES MIN. A MILLIMFTERS
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led55bf/cfled56f940nmst1604+1phototransistor 940nm
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OF LED 55B
Abstract: LED55B LED55C LED56 LED56F 55BF ge 55b NMTC LED55BF LED55CF
Contextual Info: Optoelectronic Specifications Infrared Emitter LED55B, LED55C,LED56, LED55BF, LED55CF, LED56F Gallium Arsenide Infrared-Em itting Diode The GE Solid State LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes which emit non-coherent, infrared energy with a peak wave length of
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led55bled55cled56led55bf+7led55cfled56fled55b-led55c-led56of led 55b55bfge 55bnmtc
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2N5777
Abstract: L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g22n5777l14g2 application note2n57782n57792n5780l14h4l9b sotphoto transistor 2n5777h11a2h11a3
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PHOTO DIODE LED55C
Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+11led55cfled55bfled56fl14g1l14g2photo diode led55cssl55cphoto transistor l14f1ssl55bssl55cfdirect replacement for ssl55c
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LED56F
Abstract: LED55BF LED55CF ST1331
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS LED55BF/CF, LED56F PACKAGE DIMENSIONS DESCRIPTION The LED55BF/CF and LED56F are 940nm LEDs in a wide angle, TO-46 package. SEATING FEATURES ST1331 • Good optical to mechanical alignment SYMBOL INCHES MIN. A MILLIMETERS
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led55bf/cfled56fst1331940nm+3led55bfled55cf100ma
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photo transistor 2n5777
Abstract: L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F FALL RISE M AX. M IN . M A X . PEAK EM ISSION W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M ETER S TYP. n. SEC. T Y P . n. SEC. mW 5.4mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g2photo transistor 2n5777l14f1 npn photo transistor2n5777h11 bulb2n5777 l14f12n57782 leads photo transistor 2n5777photo transistor 2n57782n5777-80photo transistor l14f1
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LED56F
Abstract: Infrared phototransistor TO18
Contextual Info: GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) ANODE (Connected To Case) 3 3 Ø0.020 (0.51) 2X
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led55bfled55cfled56fled55bf/led55cf/led56f+3940nmled55cfbinfrared phototransistor to18
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LED55B
Abstract: LED55C LED56
Contextual Info: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected
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led55bled55cled56led55b/led55c/led56+1led55cb
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st1053
Abstract: LED55B LED56 LED55C ST105 ST1054
Contextual Info: EU GaAs INFRARED EMITTING DIODE IFTDELEE11IM5 LED55B/C, LEP56 PACKAGE DIMENSIONS SEATING PLANE DESCRIPTION The LED55B/C and LED56 are 940nm LEDs in a narrow angie, TO-46 package. FEATURES S T 1332 * Good optical to mechanical alignment SYMBOL A 40 ¿D, 8 e,
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led55b/cled56940nmtheto-18+8st1604st1057st1053sti056led55bled55cst105st1054
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LED558F
Abstract: LED558 LED55C LED56F FRO 021
Contextual Info: Emitter Specifications LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F Infrared Emitter Gallium Arsenide Infrared Emitting Diode T h e L E D 5 5 B -L E D 5 5 C -L E D 5 6 S eries a re g a lliu m a rs e n id e , lig h t e m ittin g d io d e s w h ic h e m it n o n - c o h e r e n t, in f r a r e d e n e rg y w ith a p e a k w ave
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led55bled55cled56led55bf+5led55cfled56fled558fled558fro 021
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2n5777 phototransistor
Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+14led55cfled55bfled56fl14g1l14g22n5777 phototransistorl14f1 phototransistor2n5779phototransistor l14f1l14f1 npn photo transistorphoto transistor l14f1l14g3 phototransistornpn photo transistorh11a2
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LED55C
Abstract: LED55B LED56 fairchild make INFRARED EMITTING DIODE TO18 INFRARED EMITTING DIODE TO18 LED55B/LED55C/LED56
Contextual Info: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected
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led55bled55cled56led55b/led55c/led56+3ds300312fairchild make infrared emitting diode to18infrared emitting diode to18
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LED56F
Abstract: fairchild make INFRARED EMITTING DIODE TO18 LED55BF LED55CF
Contextual Info: GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) ANODE (Connected To Case) 3 3 Ø0.020 (0.51) 2X
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led55bfled55cfled56fled55bf/led55cf/led56f+3940nmds300313fairchild make infrared emitting diode to18
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H15A1
Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+14led55cfled55bfled56fl14g1l14g2h15a1h15a1 optol14f1 npn photo transistorh15a2l14f1 phototransistorge h15a1photo transistor l14f1opto h15a2l14f2
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LED55B
Abstract: LED55C LED56 Infrared phototransistor TO18
Contextual Info: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected
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led55bled55cled56led55b/led55c/led56+2led55cbinfrared phototransistor to18
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55BF
Abstract: led55b LED55B-LED55C-LED56 LED55C LED56 LED56F LED 55B 55cf OF LED 55B
Contextual Info: Emitter Specifications LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F Infrared Emitter Gallium Arsenide Infrared Emitting Diode T h e LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes w hich em it n o n -co h eren t, in fra re d energy with a p eak wave
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led55bled55cled56led55bf+7led55cfled56fled55b-led55c-led5655bfled 55b55cfof led 55b
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LED55B
Abstract: LED56
Contextual Info: [O P T*O E L E CQ TRONICS GaAs INFRARED EMITTING DIODE LED55B/C, LED56 PACKAGE DIMENSIONS DESCRIPTION The LED55B/C and LED56 are 940nm LEDs in a narrow angle, TO-46 package. S E A T IN G I I FEATURES ST1332 Good optical to mechanical alignment SYMBOL A éb
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led55b/cled56940nmst1332+3st1604measu100led55b
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2N5777 equivalent
Abstract: transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent L14G2 color sensitive PHOTO TRANSISTOR
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+14led55cfled55bfled56fl14g1l14g22n5777 equivalenttransistor l14g2l14g3l14g1-l14g2-l14g3l14g1 equivalentl14g2 general electrich11 bulbl14g3 equivalentcolor sensitive photo transistor
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L14F1 npn photo transistor
Abstract: 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g2l14f1 npn photo transistor4n26 opto isolator4n27 opto isolatorl14f1 phototransistor4n25-4n26-4n274n25-4n26-4n27-4n282n57772n5780transistor 531ge 4n25
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L14H2
Abstract: L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FA LL RISE MAX. MIN. MAX. PEA K EMISSION W AVELEN G TH TIME TIME Vp @ Pd PO@ lp=100mA lp= 100mA TYP. n. M ETER S TYP. n. SEC. T YP . n. SEC . mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g2l14h2l14h1l14f1 npn photo transistorl14h4aa 4n35h11 bulb2n5777l14f2 photo transistorl14f1h11a3
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L14F1 npn photo transistor
Abstract: transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW
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100maled55cled55bled56+15led55cfled55bfled56fl14g1l14g2l14f1 npn photo transistortransistor l14f12n5777 equivalentge l14f1l14f1 photo transistorphoto transistor l14f1l14f1l14f1-l14f2of transistor l14f1circuit using l14f1
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