BPW3 Search Results

D846

Abstract: Siemens Si PIN photodiode Siemens photodiode BPW34 D790 F4153 BPW34 circuit
Contextual Info: SI E M E N S C M P N TS i OP TO H4E » • 623b32b QQQSS1Ô 3 SIEtVlE^IS ^ ^ BPW34-1028 SILICON PIN PHOTODIODE SMT LEADS ON PLASTIC CARRIER Package Dimensions in Inches mm .234 (5.95) -.211 (5.35) ■ ■020(05^ .177(4.5) - .1 6 9 (4 ,3 ) - r .r i L_r .028

Contextual Info: Temic BPW34 S e m i c o n d u c t o r s Silicon PIN Photodiode Description T h e B P W 3 4 is a h ig h s p e e d a n d h ig h se n s itiv e P IN p h o to ­ d io d e in a m in ia tu re fla t p la stic p a ck a g e . Its lo p v iew c o n stru c tio n m a k e s it id eal a s a lo w c o st re p la c e m e n t o f

BPW34 application note

Abstract: APPLICATION NOTE BpW34 BPW34 BPW34 circuit BPW34S BPW34 application
Contextual Info: BPW34, BPW34S Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: top view • Dimensions L x W x H in mm : 5.4 x 4.3 x 3.2 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor
Contextual Info: Optoelectronics Hermetic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type TO-18 Detector Package (Convex Lens) BPW36 5 0.5 940 GaAs 1.00 – 30 100 Phototransistor

silicon PIN photodiode flat top

Contextual Info: BPW34 Vishay Telefunken Silicon PIN Photodiode Description The BPW34 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO–5 devices in many applications.

Contextual Info: E HERMETIC SILICON PHOTODARLINGTON 9 iP iß u u iR im c s BPW38 ' PACKAGE IHMEMSIONS Tfce BPW38 is a silicon photadarlington mounted in a narrow angle TO-18 package. SYMBOL A •D , a 6: h tNCHES MIN. MAX. .225 -256 .021 .Olfi .209 .230 .195 .178 iQCNQM .050 NOM

BPW34 circuit

Abstract: BPW34 application
Contextual Info: BPW34 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description 94 8583 The BPW34 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications.

BPW38

Contextual Info: SOLID STATE 01 DE 3 f l 7 5 0 f l l DOnam 2 Optoelectronic Specifications. r - y Light Detector / i s Planar Silicon Photo-Darlington Amplifier BPW38 The GE Solid State BPW38 is a supersensitive NPN Planar Silicon Photodarlington Amplifier. For many applications, only the collector and emitter

L14Gl

Abstract: L14F
Contextual Info: OPTOELECTRONICS HERMETIC SILICON INFRARED PHOTOSENSORS Metal Can Convex Lens R e c e p tio n A n g le @ 1/2 P o w e r b v c e o • C E O /V c e n A /(V ) m ax m in m ax u n its (V ) m in ±10° 6.00 - mA 45 100/10 BPW37 ±10° 3.00 - mA 45 100/10 1 L14G1

VTD34H

Abstract: BPW34 BPW34 application note BPW34 application BPW34 circuit
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34H BPW34 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded

BPW34 application note

Abstract: BPW34 BPW34 application BPW34 circuit International Radiation Detectors DSA0051539
Contextual Info: BPW34 Vishay Semiconductors Silicon PIN Photodiode Description 94 8583 The BPW34 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications.

ST1254

Abstract: ST-125-4 BFW36
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR 6PT8 E lECTBOH t CS BPW36/BPW37 The BFW36/37 are silicon phototransisters mounted in narrow angle TO-18 packages. o SYMBOL A 80 »0 #0, e e. h i K i. » INCHES MIN. MAX .226 .255 .016 .021 .209 .230 .J?8 .196 .100 MOM .QSC MOM

Contextual Info: 01E 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications_ Light Detector 4302571 G02727M 37E D H A RR IS SEillCOND S E CT OR 19812 1 • HAS 7 ^ 4 / - < £ / Planar Silicon Photo Transistor BPW36, BPW37 T he G E Solid S tate BPW 36 and BPW 37 are highly sensitive N P N P lan ar Silicon Phototransistors.

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

Siemens photodiode BPW32

Abstract: BPW32 Siemens photodiode visible light
Contextual Info: SIEMENS BPW32 SILICON PHOTODIODE VERY LOW DARK CURRENT Package Dimensions in Inches mm Chip position 024 (.6 ) .016 (. 4 ) 1 FEATURES * Silicon Planar Photodiode * N-Si Material: Anode=Front Contact, Cathode=Back Contact * High Reliability * No Testable Degradation

Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS BPW36/BPW37 PACKAGE DIMENSION. The B P W 36/37 are silicon phototransisters m ounted in narrow angle TO -18 packages. FEATURI SYMBOL A <ßD, e 1 h j k L a INCHES MIN. MAX. .225 .255 .016 .021 .209 .230 .178

BPW38

Contextual Info: t lJ HERMETIC SILICON PHOTODARLINGTON OPTOELECTRONICS BPW38 PACKAGE DIMENSIONS DESCRIPTION The BPW38 is a silicon photodarlington mounted in a narrow angle TO-18 package. FEATURES SYMBOL A @b @D @D, e e, h i k L a INCHES MAX. MIN. .225 .255 .021 .016 .230

Contextual Info: European “Pro Electron” Registered Types _ BPW38 Light Detector Planar Silicon Photo-Darlington Amplifier T h e B PW 38 is a s u p e rs e n s itiv e N PN p la n a r silic o n p h o to -D a rlin g to n a m p lifie r. F o r m a n y

"pro electron"

Contextual Info: [•o HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS BPW36/BPW37 PACKAGE DIMENSIONS The BPW36/37 are silicon phototransisters m ounted in narrow angle TO-18 packages. 9 A fc < FEATURES SYMBOL A (¿D INCHES MILLIMETERS MIN. MAX. MIN. MAX. .225 .255 5.71

BPW34

Abstract: BPW34 circuit
Contextual Info: BPW34 Vishay Telefunken Silicon PIN Photodiode Description The BPW34 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO–5 devices in many applications.

APPLICATION NOTE BpW34

Contextual Info: BPW34, BPW34S www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: top view • Dimensions L x W x H in mm : 5.4 x 4.3 x 3.2 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity

Contextual Info: Alternate Source/ Second Source Photodiodes VTD34FH BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light

BPW36

Abstract: BPW37 CQX14
Contextual Info: BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR PACKAGE DIMENSIONS FEATURES • Hermetically sealed package • Narrow reception angle • European “Pro Electron” registered 0.209 5.31 0.184 (4.67) DESCRIPTION 0.030 (0.76) NOM 0.255 (6.48) • The BPW36/37 are silicon phototransistors

BPW34 circuit

Contextual Info: BPW34 Vishay Semiconductors Silicon PIN Photodiode Description The BPW34 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications.