430SS71 Search Results

Contextual Info: 3875081 G E SOLID STATE 01E 19848 D Optoelectronic Specifications_ T - u /j. HARRIS SEMIC0N» SECTOR 37E D 430SS71 G02731Q 1 Photon Coupled Isolator C N Y 4 8 M IL L I M E T E R S SW 80L- Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier

Contextual Info: HARRIS SEtllCOND SECTOR ÜJ H A R R IS ItE D • 430SS71 0015113 5 ■ H D -15530/883 CMOS Manchester Encoder-Decoder June 1989 Pinouts Features • T h is C irc u it is P ro c e s s e d in A c c o rd a n c e to M il- S t d - 8 8 3 a n d is Fully HD1-1 5 5 3 0 /8 8 3 CERAMIC DIP

Contextual Info: HARRIS SEMICOND SECTOR TS D e | 430SS71 □ 0 1 Q b 4 Iì 0 H M -6 5 1 8 h a r r is CO in <o 1024 x 1 CMOS RAM Pinout Features TOP VIEW • H M -6 1 0 0 C o m p a tib le 5 0 jiW Max. • L o w S ta n d b y P o w e r. • L o w O p e ra tin g P o w e r

PAA 725

Abstract: HA7-5147-2 HA2-5147-2
Contextual Info: HARRIS SEHICOND SECTOR blE D 430SS71 004b?0'i T4ñ _ HAS HA-5147 iS 3 H A R R I S W S E M I C O N D U C T O R Ultra-Low Noise Precision High Slew Rate Wideband Operational Amplifier March 1993 Features Description • H

TRANSISTOR CD 2897

Abstract: GFH601 k 2897 transistor 340 opto isolator 100J1
Contextual Info: HARRIS SEMICOND MÊimmmmtiÈÊmâiiim SECTOR 37E D B 430SS71 DG2732b S E l HAS Optoelectronic Speciticatio n s. Photon Coupled Isolator GFH601 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The G E Solid State GFH601 consists of a gallium arsenide infrared

Contextual Info: HARRIS SEmCOND SECTOR SbE D H 430SS71 □ □M31bci ESS B H A S HI-7153/883 ¡33 8-Channel, 10-Bit, High Speed July1992 Sampling A/D Converter Features Description • This Circuit Is Processed in Accordance to Uil-Std883 and is Fully Conformant Under the Provisions of

Contextual Info: HARRIS SENICÔND SECTOR j H A R R IbE D • 43G2271 0014275 4 ■ T-79-07-/0 H A -5 0 0 4 /8 83 I S 100M Hz Current Feedback Amplifier June 1989 Features Description • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of

HARRIS 82C54

Abstract: CS82C54-10 P82C54
Contextual Info: HARRIS SEMICOND SECTOR MbE D • M302E71 DD3flb'fll 3 « H A S R O C ' R A H A R R I S S E M I C O N D U C T O R i / i f a T - 3 Z .- 3 3 - 0 5 February CM OS Programmable Interval Timer 1992 Features Description • 10MHz or 8MHz Clock Input Frequency The Harris 82C54 is a high performance C M O S Programma­

Contextual Info: HARRIS H S E M I C O N D U C T O R P 2 1 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver October 1995 Description Features • I Drives N-Channel MOSFET Half Bridge The H IP 2100 is a high frequency, 100V Half Bridge N-Channel M O S F E T driver IC, available in 8 lead plastic

430SS71

Contextual Info: HARRI S SEfllCOND SECTOR 4 0E D • 4302271 0032532 ~ nri HARRIS -/W T-A* r - i 5 ~ w D ■¡HAS - \ " ] ' H C - 5 5 Q 2 Â \ sue Subsciber Line Interface Circuit W "* August 1991 \ Features Description • Monolithic Integrated Device' ” • Dl High Voltage Process

Contextual Info: HARRIS SEMICOND SECTOR SflE » H a r r is U U SEM ICO N D UCTOR REGISTRATION PENDING Currently Available as FRK150 D, R, H • 43D2271 0045725 2T3 « H A S 2N7291D, 2N7291R 2N7291H Radiation Hardened N-Channel Power MOSFETs December1992 Features Package

Contextual Info: HARR IS SEPIICOND SE CT OR m 5ÔE D • M30 2 27 1 0 0 4 3 ^ 3 3 3S7 « H A S HCS10MS HARRIS S E M I C O N D U C T O R Radiation Hardened Triple 3-Input NAND Gate Decem ber 1992 Pinouts Features ~ - P 4 3 - Z 1 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-183S, DESIGNATOR CDIP2-T14, LEAD FINISH C

Contextual Info: æ ACSOOMS HARRIS S E M I C O N D U C T O R Radiation Hardened Quad 2-Input NAND Gate May 1995 Features Pinouts 14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C TOP VIEW 1.25 Micron Radiation Hardened SOS CMOS Total Dose 300K RAD Si

HARRIS CORPORATION HA3-2529-5

Abstract: 2310 signal conditioning amplifier HARRIS 2529 43Q5271 AAW2
Contextual Info: il HARRIS blE D HARRIS SEniCON» SECTOR U U Uncompensated, High Slew Rate High Output Current, Operational Amplifier Features Description High Slew R at*. ISOV^is Fast

CD4062

Abstract: CD4062A 430EH
Contextual Info: 37E ì> HARRIS SEMICOND SECTOR 4305271 0021470 3875081 G E SOLID STATE O 1E 13664 IHAS D T I I CD4062A Types CMOS 200-Stage Dynamic Shift Register MAXIMUM RATINGS, Absoluta-Maxlmum Values: TEMPERATURE RANGE T ^ g . -«5to+1SO *C

IS2076-E

Contextual Info: £8 HU977, CXA1977 10-Bit 20 MSPS A/D Converter February 1996 Features Description • Maximum Operating Speed. 20 MSPS Min The H11977, CXA1977 is an 10-bit 20 MSPS 2-step parallel A/D converter tor video signal processing. • R e s o lu tio n . 10-Bit

ha5025

Contextual Info: 430EE71 005231^ TIT «HAS HA5025 Quad 125 MHz Video Current Feedback Amplifier March1994 Features • Description The HA5025 is a wide bandwidth high slew rate quad ampli­ fier optimized for video applications and gains between 1 and 10. It is a current feedback amplifier and thus yields less

5018 8p

Abstract: IHS012 5014 ti
Contextual Info: IH5009-5012, 5014, 5016-5020, 5022, 5024 HARRIS SEMICOND 43E SECTOR D • 4302271 003b77b *4 B 9 H A S IH5009-5012, 5014, 5016-5020, 5022, 5024 H A R R IS S E M I C O N D U C T O R \ - 5 Virtual Ground Analog Switch l - U GENERAL DESCRIPTION FEATURES The IH5009 series o f analog sw itches w ere designed to

Contextual Info: æ HCTS14MS HARRIS S E M I C O N D U C T O R Radiation Hardened HEX Inverting Schmitt Trigger August 1995 Features Pinouts 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si)

HI1DAC80V5

Abstract: schema DIGITAL TO ANALOG
Contextual Info: HARRIS SENICOND 43E D SECTOR • 4305271 GGBbbSl b " P S e - c ft- \ 7- H I-D Ä C 80V HARRIS 12Bit, Low Cost, M onolithic Digital to Analog Converter HI-DAC80V June 1989 P in o u t Fe a tu re s • D A C 8 0 V A lte rn a te S o u r c e TOP VIEW • M o n o lith ic C o n s tru c tio n